Method and apparatus for linking and/or patterning self-assembled objects
    51.
    发明授权
    Method and apparatus for linking and/or patterning self-assembled objects 有权
    用于连接和/或构图自组装物体的方法和装置

    公开(公告)号:US06566665B2

    公开(公告)日:2003-05-20

    申请号:US09930979

    申请日:2001-08-17

    CPC classification number: B82Y30/00 G03F7/038 G03F7/165 G11B5/855 Y10S977/901

    Abstract: The invention provides a method and related apparatus to link and/or pattern self-assembled first objects to a second object. Each of the first object (e.g., a nanoparticle) can be embedded in a mobile binder (i.e., a stabilizer). The invention applies energy to the first object and stabilizer, links this first object to the second object, and provides a controlled linkage of the first object with respect to the second object. Applying this procedure to many such objects results in a larger areal arrangement of these linked objects. An appropriate solvent may be used to remove non-linked objects, yielding a patterned array. Thermal annealing can be applied to control the physical and chemical properties of the array.

    Abstract translation: 本发明提供一种方法和相关装置,用于将自组装的第一物体链接和/或图案化为第二物体。 第一物体(例如,纳米颗粒)中的每一个可以嵌入移动的粘合剂(即稳定剂)中。 本发明将能量应用于第一物体和稳定器,将该第一物体与第二物体相连,并且提供第一物体相对于第二物体的受控连杆。 将此过程应用于许多这样的对象导致这些链接对象的更大的面积排列。 可以使用合适的溶剂来除去未连接的物体,产生图案化的阵列。 可以应用热退火来控制阵列的物理和化学性质。

    Mask pattern transfer method, mask pattern transfer apparatus using the method, and device manufacturing method
    52.
    发明授权
    Mask pattern transfer method, mask pattern transfer apparatus using the method, and device manufacturing method 失效
    掩模图案转印方法,使用该方法的掩模图案转印装置以及装置制造方法

    公开(公告)号:US06559463B2

    公开(公告)日:2003-05-06

    申请号:US09499297

    申请日:2000-02-07

    Abstract: A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).

    Abstract translation: 掩模台速度| Vm |,晶片台速度| Vw |和绝对值| DELTAS | 确定光束偏转值(步骤101)。 然后,根据上述判断结果判断条纹号是偶数还是奇数(步骤108),并设置掩模台,晶片台和晶片偏转器的偏转方向(步骤109和110)。 然后,晶片台和掩模台分别开始连续移动(步骤113)并且分割图案被曝光(步骤115-119)。 判断所有分割图案是否被曝光(步骤120)。 当所有分割图案都未曝光时,通过在对应于掩模上的光束宽度的晶片上添加偏转值来曝光下一分割图案(步骤121)。

    Vibratory table apparatus and associated equipment and methods for radiation treatment of polymeric materials
    53.
    发明授权
    Vibratory table apparatus and associated equipment and methods for radiation treatment of polymeric materials 有权
    振动台设备及相关设备及聚合材料辐射处理方法

    公开(公告)号:US06486481B1

    公开(公告)日:2002-11-26

    申请号:US09439017

    申请日:1999-11-12

    Abstract: Apparatus and a method for treating polymeric material, such as polytetrafluoroethylene, with radiation. The polytetrafluoroethylene is moved under an electron beam in an even and consistent depth on an adapted vibratory table. The vibratory table is sealably covered which allows a controlled environment. The polymeric material can be degraded to lower molecular weight forms or reacted with other materials.

    Abstract translation: 用辐射处理聚合材料如聚四氟乙烯的装置和方法。 聚四氟乙烯在电子束下以均匀且一致的深度在适配的振动台上移动。 振动台被密封地覆盖,这允许受控的环境。 聚合物材料可以降解成较低的分子量形式或与其他材料反应。

    Method and apparatus for observing or processing and analyzing using a charged beam
    54.
    发明授权
    Method and apparatus for observing or processing and analyzing using a charged beam 有权
    使用带电束观察或处理和分析的方法和装置

    公开(公告)号:US06476387B1

    公开(公告)日:2002-11-05

    申请号:US09311268

    申请日:1999-05-14

    CPC classification number: H01J37/28 H01J2237/0047 H01J2237/2482

    Abstract: In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

    Abstract translation: 在通过在至少部分地被绝缘体膜覆盖的样品上照射带电束的样品的表面的方法中,紫外光可能作为脉冲照射在样品(衬底)上,从而将绝缘体 由于光电导效应而成为导电材料,从而将样品(基板)的表面转变为导电材料,使得带电粒子从接地部分接地,以防止带电粒子由于带电粒子而被斥力 被照射的带电光束积聚在形成在样品(基板)表面上的绝缘体中。

    Power supply hardening for ion beam systems
    55.
    发明授权
    Power supply hardening for ion beam systems 有权
    离子束系统的电源硬化

    公开(公告)号:US06452196B1

    公开(公告)日:2002-09-17

    申请号:US09467700

    申请日:1999-12-20

    Inventor: Bo H. Vanderberg

    CPC classification number: H01J37/3171 H01J37/241 H01L2924/0002 H01L2924/00

    Abstract: An improved ion implantation system is provided by the present invention. The system includes at least one power supply for providing voltage to at least one electrode and, a switching system operatively coupled between the at least one power supply and the at least one electrode. The switching system decouples the at least one power supply and the at least one electrode at a predetermined threshold to mitigate overload of the at least one power supply.

    Abstract translation: 通过本发明提供改进的离子注入系统。 该系统包括用于向至少一个电极提供电压的至少一个电源,以及可操作地耦合在所述至少一个电源和所述至少一个电极之间的开关系统。 交换系统将至少一个电源和至少一个电极分离到预定阈值以减轻至少一个电源的过载。

    Multiple target, multiple energy radioisotope production
    56.
    发明授权
    Multiple target, multiple energy radioisotope production 失效
    多目标,多能放射性同位素生产

    公开(公告)号:US06444990B1

    公开(公告)日:2002-09-03

    申请号:US09432259

    申请日:1999-11-02

    CPC classification number: G21G1/10 H05H7/10

    Abstract: A multiple target array for receiving particles from a particle beam generator includes a particle beam transport path having a transport inlet and a transport outlet, the inlet receiving a particle beam from the particle beam generator. A kicker magnet is positioned along the particle beam transport path. The kicker magnet has an ON state and an OFF state and a kicker magnet inlet and a kicker magnet outlet. The array further includes a plurality of target paths, each of said target paths having a target inlet and terminating in a target. One of the target inlets is connected to the transport path adjacent to the kicker magnet outlet, and the particle beam in the transport path entering the kicker magnet inlet passes along the transport path through the kicker magnet outlet when the kicker magnet is in the OFF state, and the beam is directed to the target inlet when the kicker magnet is in the ON state.

    Abstract translation: 用于从粒子束发生器接收颗粒的多目标阵列包括具有输送入口和输送出口的粒子束输送路径,入口接收来自粒子束发生器的粒子束。 沿着粒子束传送路径定位一个踢球磁体。 踢球磁铁具有ON状态和OFF状态以及踢球磁铁入口和踢球磁铁出口。 阵列还包括多个目标路径,每个所述目标路径具有目标入口并终止于目标。 目标入口之一连接到与踢球磁体出口相邻的输送路径,当踢球磁体处于关闭状态时,进入踢球磁体入口的输送路径中的粒子束沿着输送路径通过踢球磁体出口 当踢球磁体处于ON状态时,光束被引导到目标入口。

    Charged particle beam projection lithography with variable beam shaping
    57.
    发明授权
    Charged particle beam projection lithography with variable beam shaping 失效
    带有可变光束成形的带电粒子束投影光刻

    公开(公告)号:US06437352B1

    公开(公告)日:2002-08-20

    申请号:US09323011

    申请日:1999-06-01

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174

    Abstract: Flexibility of a charged particle (e.g. electron) beam projection lithography tool is enhanced by filling a shaping aperture with the beam, projecting the image of the shaping aperture to a reticle subfield where the image preferably corresponds in size to a “clear” or “aperture” area in a subfield of the reticle and deflecting the beam across a selected portion thereof to develop a compound image which is projected onto the target (e.g. wafer). Deflection of the shaped beam onto the reticle aperture is preferably performed electrostatically with the center of deflection coincident with the source cross-over of the charged particle beam column to avoid motion of the beam at the contrast aperture which is used, possibly together with a beam tube, to collect particles scattered where the deflected beam overlaps the patterned areas of the reticle adjacent the reticle aperture. Fabrication of new reticles is thus avoided for minor design changes by provision of direct writing for the design changes while preserving a large portion of the benefits of high throughput of charged particle beam projection of reticle patterns to the target.

    Abstract translation: 通过用光束填充成形孔来增强带电粒子(例如电子)光束投影光刻工具的灵活性,将成形孔的图像投影到掩模版子场,其中图像优选地大小对应于“透明”或“孔径 “区域,并将光束偏转在其选定部分上,以形成投影到目标(例如晶片)上的复合图像。 成形光束到光罩孔径上的偏转优选地是静电地进行的,其偏心中心与带电粒子束柱的光源交叉重合,以避免光束在对比度光圈处的运动,该光束可能与光束 以收集散射的颗粒,其中偏转的光束与掩模版孔附近的掩模版的图案化区域重叠。 因此,通过为设计变更提供直接写入,同时保留了将掩模版图案的高通量粒子束投影到目标的大部分益处,从而避免了对于小的设计变化的新的标线的制造。

    Uniformity correction for large area electron source
    58.
    发明授权
    Uniformity correction for large area electron source 有权
    大面积电子源的均匀性校正

    公开(公告)号:US06407399B1

    公开(公告)日:2002-06-18

    申请号:US09408926

    申请日:1999-09-30

    CPC classification number: H01J1/36 H01J3/025 H01J37/077 H01J2237/31779

    Abstract: The invention pertains to electron exposure equipment useful for exposing, treating and processing coatings and other materials by a cold cathode gas discharge electron source having a broad uniform emitting area. The apparatus has a vacuum chamber; a large surface area cathode in the vacuum chamber and means for applying a negative voltage to the cathode and causing the cathode to issue electrons toward a target in the vacuum chamber. An anode is positioned between the cathode and the target. The anode is formed of an electrically conductive grid having an array of apertures therethrough extending from a center of the grid to an edge of the grid. In one embodiment the apertures have a progressively increasing area from the center of the grid to the edge of the grid. In another embodiment the anode has a progressively decreasing thickness from the center of the grid to the edge of the grid. In yet another embodiment the anode has both progressively increasing area from the center of the grid to the edge of the grid and a progressively decreasing thickness from the center of the grid to the edge of the grid. A voltage is applied to the anode which is positive relative to the voltage applied to the cathode.

    Abstract translation: 本发明涉及用于通过具有宽均匀发射面积的冷阴极气体放电电子源对涂层和其它材料进行曝光,处理和加工的电子曝光设备。 该装置具有真空室; 真空室中的大的表面积阴极和用于向阴极施加负电压并使阴极向真空室中的靶发射电子的装置。 阳极位于阴极和靶之间。 阳极由导电栅格形成,其具有从栅极的中心延伸到栅格的边缘的孔的阵列。 在一个实施例中,孔具有从栅格的中心到栅格的边缘的逐渐增加的面积。 在另一个实施例中,阳极从网格的中心到网格边缘的厚度逐渐减小。 在又一实施例中,阳极具有从栅格的中心到栅格的边缘的逐渐增加的面积,以及从网格的中心到栅格的边缘的逐渐减小的厚度。 对阳极施加电压,阳极相对于施加到阴极的电压为正。

    Multicolumn charged-particle beam lithography system
    59.
    发明授权
    Multicolumn charged-particle beam lithography system 失效
    多柱带电粒子束光刻系统

    公开(公告)号:US06344655B1

    公开(公告)日:2002-02-05

    申请号:US09352426

    申请日:1999-07-13

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174 H01J2237/31774

    Abstract: Disclosed is a multicolumn charged-particle beam lithography system having the circuitry of a settlement wait time control unit thereof simplified. The settlement wait time control unit controls a settlement wait time to be spent by each of amplifiers connected to main deflectors necessary to realize concurrent exposure among columns. The charged-particle beam lithography system has a plurality of columns for patterning an exposed sample by deflecting and sweeping a charged-particle beam on the exposed sample according to expose pattern data. The charged-particle beam lithography system includes a settlement wait time control unit for controlling a settlement wait time to be spent by each of the amplifiers connected to the deflectors necessary to realize concurrent exposure among the columns. The settlement wait time control unit includes a circuit for comparing magnitudes of changes in deflection data items output from deflector adjusting circuits in the columns with one another and selecting a maximum value. The settlement wait time control unit further includes a circuit for determining a settlement wait time for all the columns according o the magnitude of a change of the selected maximum value.

    Abstract translation: 公开了一种具有其沉降等待时间控制单元的电路的多列带电粒子束光刻系统。 结算等待时间控制单元控制连接到主导向器的每个放大器消耗的结算等待时间,以实现柱之间的并发曝光所必需的。 带电粒子束光刻系统具有多个列,用于根据曝光图案数据偏转和扫描暴露样品上的带电粒子束来图案化曝光的样品。 带电粒子束光刻系统包括一个沉降等待时间控制单元,用于控制连接到在柱之间实现同时曝光所必需的偏转器的每个放大器所消耗的沉降等待时间。 结算等待时间控制单元包括用于将列中的偏转器调节电路输出的偏转数据项的变化幅度彼此进行比较并选择最大值的电路。 结算等待时间控制单元还包括用于根据所选择的最大值的变化的大小来确定所有列的结算等待时间的电路。

    Alignment mark detection method, and alignment method, exposure method and device, and device production method making use of the alignment mark detection method
    60.
    发明授权
    Alignment mark detection method, and alignment method, exposure method and device, and device production method making use of the alignment mark detection method 失效
    对准标记检测方法,对准方法,曝光方法和装置以及使用对准标记检测方法的装置制造方法

    公开(公告)号:US06331709B1

    公开(公告)日:2001-12-18

    申请号:US08725400

    申请日:1996-10-03

    CPC classification number: G03F9/7053 G03F7/70233 H01J37/3045 H01J2237/3175

    Abstract: An apparatus and method for detecting an alignment mark on a substrate using electron beams. The method include the steps of setting an accelerating voltage of the electron beams in accordance with the layer structure of the substrate, irradiating the substrate with the electron beams having the accelerating voltage set in the setting step, and detecting one of radiation and electrons from the substrate after the irradiating step is performed, and determining the position of the alignment mark based on the detecting operation. The apparatus includes a device for setting such an accelerating voltage, a device for irradiating the substrate with the electron beams, and a detector for detecting one of the radiation and the electrons. Fluorescent X-rays, secondary electrons or backscattered electrons are detected.

    Abstract translation: 一种使用电子束检测基板上的对准标记的装置和方法。 该方法包括以下步骤:根据衬底的层结构设定电子束的加速电压,用设定步骤中设定的加速电压的电子束照射衬底,并从 执行照射步骤之后的基板,并且基于检测操作确定对准标记的位置。 该装置包括用于设置这种加速电压的装置,用于用电子束照射基板的装置,以及用于检测辐射和电子之一的检测器。 检测荧光X射线,二次电子或背散射电子。

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