公开(公告)号：US20160247960A1

公开(公告)日：2016-08-25

申请号：US15028078

申请日：2014-10-14

申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Armand BETTINELLI

IPC分类号： H01L31/18 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0224

CPC分类号： H01L31/0747 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/022483 ,  Y02E10/50

摘要： A method for producing a photovoltaic cell including the following successive steps: i) providing a substrate including a p/n photovoltaic junction, successively covered by a transparent conductive oxide layer, a first layer made from electrically insulating material and a second layer made from metallic material; ii) performing localised heat treatment by laser irradiation under conditions enabling the electrically insulating material and the metallic material to be made to react locally to form a seed layer, made from a metal-charged glassy compound, the seed layer being electrically connected to the p/n junction by way of the transparent conductive oxide layer; iii) performing removal of the second layer of metallic material; iv) performing formation of an electric contact on the seed layer by electrochemical deposition.

摘要翻译： 一种用于制造光伏电池的方法，包括以下连续步骤：i）提供包括由透明导电氧化物层连续覆盖的ap / n光伏结的衬底，由电绝缘材料制成的第一层和由金属材料制成的第二层 ; ii）在使得电绝缘材料和金属材料能够局部反应以形成由金属带电的玻璃化合物制成的种子层的条件下，通过激光照射进行局部热处理，种子层电连接到p / n结，通过透明导电氧化物层; iii）执行第二层金属材料的去除; iv）通过电化学沉积在种子层上形成电接触。

公开(公告)号：US09402044B2

公开(公告)日：2016-07-26

申请号：US14390745

申请日：2013-04-04

申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives

发明人： Laurent Millet ,  Arnaud Verdant

IPC分类号： H04N5/378 ,  H04N5/335 ,  H04N5/347 ,  H04N5/374

CPC分类号： H04N5/378 ,  H04N5/335 ,  H04N5/347 ,  H04N5/374

摘要： The invention concerns a method of processing pixel values comprising: during a first read phase, generating a first digital value as a function of pixel values by controlling, based on first and second control signals and a first set of increment rates, the rate that a first counter (220-i) is incremented; and during a second read phase, generating a second digital value as a function of pixel values by controlling, based on first and second control signals and a second set of increment rates, the rate that said first counter (220-i) is incremented, the first and second sets of increment rates each defining an increment rate for each of a plurality of states of the first and second control signals, wherein said first set of increment rates is different from said second set of increment rates.

摘要翻译： 本发明涉及一种处理像素值的方法，包括：在第一读取阶段期间，通过基于第一和第二控制信号和第一组递增速率来控制基于像素值的函数的速率，生成作为像素值的函数的第一数字值 第一计数器（220-i）递增; 并且在第二读取阶段期间，通过基于第一和第二控制信号和第二组递增速率来控制所述第一计数器（220-i）递增的速率，生成作为像素值的函数的第二数字值， 所述第一和第二增量率集合各自定义所述第一和第二控制信号的多个状态中的每一个的增量率，其中所述第一组递增速率与所述第二组递增速率不同。

公开(公告)号：US20160181502A1

公开(公告)日：2016-06-23

申请号：US14975078

申请日：2015-12-18

申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  HOTBLOCK ONBOARD

发明人： Guillaume SAVELLI ,  Joël DUFOURCQ

IPC分类号： H01L35/32 ,  H01L35/04

CPC分类号： H01L35/32 ,  G01K1/18 ,  G01K3/14 ,  G01K7/028 ,  G01K17/20 ,  H01L35/04

摘要： Sensor including a substrate, an assembly of thermoelectric layers including at least one first and one second junction of a thermocouple, at least one first and one second connection pads arranged to transfer heat respectively to each first and each second junction, a support member (2) of the substrate (3) intended to be connected to the hot source (Sc) and to the cold source (Sf), first and second metal connectors arranged to electrically connect the support member (2) respectively to each first and each second connection pad, the support member (2) including a thermal conductor configured to transfer heat from the hot source (Sc) to the first metal connector, and to transfer heat from the second metal connector to the cold source (Sf).

摘要翻译： 包括基底的传感器，热电层的组件，其包括热电偶的至少一个第一和第二接合部，至少一个第一连接焊盘和第二连接焊盘，其布置成分别将热量传递到每个第一和每个第二接合部;支撑部件 ）用于连接到热源（Sc）和冷源（Sf）的基板（3），第一和第二金属连接器被布置成将支撑件（2）分别电连接到每个第一和第二连接 支撑构件（2）包括被配置为将热量从热源（Sc）传递到第一金属连接器并将热量从第二金属连接器传递到冷源（Sf）的热导体。

公开(公告)号：US20160153682A1

公开(公告)日：2016-06-02

申请号：US14905604

申请日：2014-07-18

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SALZGITTER MANNESMANN PRECISION ETIRAGE SAS

发明人： Valéry VUILLERME ,  Arnaud BRUCH ,  Gatien FLEURY ,  Benoit BOULAY ,  Jean-Marc DUHAMEL

IPC分类号： F24J2/26 ,  F24J2/34

CPC分类号： F24S10/75 ,  F22B1/006 ,  F24S10/40 ,  F24S20/20 ,  F24S23/70 ,  F24S60/00 ,  F24S2010/751 ,  F28F1/40 ,  Y02E10/41 ,  Y02E10/44

摘要： A solar absorber body for a concentrating solar power system, said solar absorber body including: a tube, designed to contain a heat transfer medium and including a first part designed to be exposed to the sunlight and a second part designed to be unexposed to the sunlight, an assembly of fins made of thermally conductive material, and a selective coating arranged at least on the outer surface of the first part of the tube, said assembly of fins defining at least two longitudinal passages inside the tube, said passages being adjacent in a sectional plane perpendicular to the longitudinal axis of the tube, said assembly of fins being configured to create a continuous thermal bridge inside the tube from at least a portion of the inner surface of first part of the tube to at least a portion of the inner surface of the second part of the tube.

摘要翻译： 一种用于集中太阳能发电系统的太阳能吸收体，所述太阳能吸收体包括：管，设计成容纳传热介质并包括被设计成暴露在阳光下的第一部分和被设计为不暴露于阳光的第二部分 ，由导热材料制成的翅片的组件以及至少布置在所述管的第一部分的外表面上的选择性涂层，所述翅片组件限定在所述管内的至少两个纵向通道，所述通道在一个 所述翅片组件被构造成在所述管内形成从所述管的第一部分的内表面的至少一部分到所述内表面的至少一部分的连续热桥 的第二部分管。

公开(公告)号：US09236262B2

公开(公告)日：2016-01-12

申请号：US14429153

申请日：2013-09-18

申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Philippe Coronel

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H01L21/033 ,  H01L29/40

CPC分类号： H01L21/28132 ,  H01L21/0337 ,  H01L21/28141 ,  H01L29/401 ,  H01L29/66772 ,  H01L29/78648

摘要： A substrate of SOI type is covered by an etching mask defining three distinct semiconductor patterns. A lateral spacer is formed around the three patterns and performs the connection between two adjacent patterns. The buried insulating layer is eliminated so as to define a cavity which suspends a part of a first pattern. The first etching mask is eliminated. A gate dielectric is formed on two opposite main surfaces of the first pattern. The resist is deposited in the cavity and on the first pattern and is then exposed to form two patterns defining the bottom and top gates. An electrically conducting material is deposited in the cavity and on the first pattern so as to form the bottom gate and the top gate on each side of the first semiconductor material pattern.

摘要翻译： SOI型衬底由限定三种不同半导体图形的蚀刻掩模覆盖。 在三个图案周围形成横向间隔件，并且执行两个相邻图案之间的连接。 消除掩埋绝缘层以限定悬挂第一图案的一部分的空腔。 第一蚀刻掩模被消除。 栅极电介质形成在第一图案的两个相对的主表面上。 抗蚀剂沉积在腔体和第一图案上，然后暴露以形成限定底部和顶部栅极的两个图案。 在空腔和第一图案上沉积导电材料，以在第一半导体材料图案的每一侧上形成底栅和顶栅。

公开(公告)号：US20150109694A1

公开(公告)日：2015-04-23

申请号：US14396906

申请日：2013-04-09

申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Cédric Ducros ,  Helga Szambolics

IPC分类号： G02B5/09 ,  H01L31/0236 ,  G02B5/08 ,  H01L31/054

CPC分类号： G02B5/09 ,  G02B5/0875 ,  H01L31/022466 ,  H01L31/02366 ,  H01L31/0547 ,  H01L31/056 ,  Y02E10/52

摘要： A textured reflector for a solar cell of thin film type is produced by deposition of a metal film on a support through openings of a mask. The mask is formed by a thin film formed by coplanar and preferably joined balls, the gaps between the balls forming the openings of the mask. The thin film is further advantageously formed by balls made from silica or from polymer material.

摘要翻译： 用于薄膜型太阳能电池的纹理反射器是通过掩模的开口将金属膜沉积在支撑体上而产生的。 掩模由由共面且优选接合的球形成的薄膜形成，球之间的间隙形成掩模的开口。 薄膜进一​​步有利地由二氧化硅制成的球或由聚合物材料形成。

公开(公告)号：US09008708B2

公开(公告)日：2015-04-14

申请号：US13886649

申请日：2013-05-03

申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives

发明人： Matthieu Gautier ,  Vincent Berg

IPC分类号： H04W74/08 ,  H04L27/00

CPC分类号： H04W74/0808 ,  H04L27/0006

摘要： The invention relates to a process for detection of a signal in a frequency sub-band of a frequency band of an acquired signal y(t), the process comprising: acquisition of the signal y(t) in a frequency band; frequential analysis of said acquired signal y(t) to obtain at least one frequential signal Y with NFFT frequential components; breakdown into M frequency sub-bands i of size N of the frequential signal Y, the size of each frequency sub-band being a function of the bandwidth of the signal to be detected; determination, in the frequential domain, for each frequency sub-band, of a criterion Ti, i=1, . . . , M as a function of the energy of the signal in the frequency sub-band i and of the coefficient two of the autocorrelation function of the signal in the frequency sub-band i; decision, as a function of the criterion Ti, to determine whether a signal is detected in the sub-band i.

摘要翻译： 本发明涉及一种用于检测获取信号y（t）的频带的频率子带中的信号的处理，该过程包括：获取频带中的信号y（t）; 对所述获取的信号y（t）进行频率分析以获得具有N FFT频率分量的至少一个频率信号Y; 分解为频率信号Y的大小N的M个频带子带i，每个频率子带的大小是要检测的信号的带宽的函数; 在频域中，对于每个频率子带，确定标准Ti，i = 1，...。 。 。 ，M作为频率子带i中的信号的能量和频率子带i中的信号的自相关函数的系数2的函数; 决定，作为标准Ti的函数，以确定在子带i中是否检测到信号。

公开(公告)号：US20140343870A1

公开(公告)日：2014-11-20

申请号：US14277512

申请日：2014-05-14

申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Benoît MARTEL ,  Jordi VEIRMAN

IPC分类号： G01N27/72

CPC分类号： G01N27/72 ,  G01N27/041 ,  G01R31/2648 ,  H01L22/14

摘要： The concentrations of three acceptor and donor dopants of a semiconductor sample are determined by solving a system of three equations. A first equation is obtained by measuring the free charge carrier concentration of the sample at low temperature, and in then confronting these measurements with a mathematical model suitable for these temperatures. A second equation is obtained by measuring a mobility of the majority charge carriers and comparing it with its mathematical expression. A third equation between the dopant concentrations is established knowing the activation energy of the shallower majority dopant in the bandgap of the semiconductor material. When the activation energy of this majority dopant is equal to its maximum value, this third equation is derived from the electro-neutrality of the silicon at ambient temperature. When, the activation energy differs from its maximum value, the concentration of this majority dopant can be deduced directly from its activation energy.

摘要翻译： 通过求解三个方程的系统来确定半导体样品的三个受体和施主掺杂剂的浓度。 通过在低温下测量样品的自由载流子浓度，然后用适合于这些温度的数学模型来对这些测量结果来获得第一个方程式。 通过测量大多数电荷载流子的迁移率并将其与其数学表达式进行比较来获得第二方程。 知道掺杂剂浓度之间的第三个方程是知道半导体材料的带隙中较浅多数掺杂剂的活化能。 当这个多数掺杂剂的活化能等于其最大值时，第三个方程式来自于环境温度下硅的电中性。 当活化能与其最大值不同时，该多数掺杂剂的浓度可以从其活化能直接推导出来。

公开(公告)号：US08585824B2

公开(公告)日：2013-11-19

申请号：US13140614

申请日：2009-12-18

申请人： François Champonnois ,  François Beaumont ,  Christian Lascoutouna

发明人： François Champonnois ,  François Beaumont ,  Christian Lascoutouna

IPC分类号： A62D3/17 ,  B23K26/36

CPC分类号： B08B7/0042 ,  B23K26/0604 ,  B23K26/082

摘要： The invention relates to a method of ablating a surface layer of a wall by sweeping the said layer, comprising: a step of directional control by an optical deflector of a plurality of pulsed laser beams; a step of ablating the layer on impact zones created by the plurality of laser beams, each impact zone being defined by a centre and by a characteristic dimension; the method is characterized in that the impact zones are disjoint, the distance between each centre of the impact zones being equal to at least ten times the largest characteristic dimension of the impact zones. The invention also relates to a corresponding device.

摘要翻译： 本发明涉及通过扫掠所述层来消除壁的表面层的方法，包括：由多个脉冲激光束的光学偏转器进行方向控制的步骤; 由多个激光束产生的冲击区上的层的烧蚀步骤，每个冲击区由中心和特征尺寸限定; 该方法的特征在于冲击区域不相交，冲击区域的每个中心之间的距离等于冲击区域的最大特征尺寸的至少十倍。 本发明还涉及相应的装置。

公开(公告)号：US11601125B2

公开(公告)日：2023-03-07

申请号：US17303792

申请日：2021-06-08

申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives

发明人： Dominique Bergogne ,  Thanh-Hai Phung

IPC分类号： H03K17/687 ,  H03K17/041 ,  H03K17/284

摘要： The present description concerns a method of controlling at least one switch (TH), including: the reception of signals (S3-i) having between one another at least one phase shift representative of a desired state of said at least one switch; the obtaining, from said signals, of a value (Si) representative of the desired state; and the application of the representative value to said at least one switch.