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    POWER SUPPLY CIRCUIT WITH LOW STAND-BY LOSSES
    62.
    发明申请
    POWER SUPPLY CIRCUIT WITH LOW STAND-BY LOSSES 有权
    具有低位丢失的电源电路

    公开(公告)号：US20120163050A1

    公开(公告)日：2012-06-28

    申请号：US13332393

    申请日：2011-12-21

    Applicant: Laurent Gonthier ,  Antoine Passal

    Inventor： Laurent Gonthier ,  Antoine Passal

    IPC: H02M7/155

    CPC classification number: H02M7/1557 ,  H02M7/06 ,  H02M7/155 ,  H02M2001/0032 ,  Y02B70/16

    Abstract: A circuit for converting an A.C. power supply voltage into a D.C. voltage, including: a first branch capable of providing a first power level; and a second parallel branch capable of providing a second power level greater than the first one, the second branch including a bidirectional activation switch.

    Abstract translation: 一种用于将交流电源电压转换成直流电压的电路，包括：能够提供第一功率电平的第一分支; 以及能够提供大于第一功率电平的第二功率电平的第二并联支路，所述第二支路包括双向启动开关。

    MESA-TYPE BIDIRECTIONAL SHOCKLEY DIODE
    63.
    发明申请
    MESA-TYPE BIDIRECTIONAL SHOCKLEY DIODE 有权
    MESA型双向触发二极管

    公开(公告)号：US20120161199A1

    公开(公告)日：2012-06-28

    申请号：US13332395

    申请日：2011-12-21

    Applicant: Yannick Hague ,  Samuel Menard

    Inventor： Yannick Hague ,  Samuel Menard

    IPC: H01L29/87

    CPC classification number: H01L29/0638 ,  H01L21/70 ,  H01L29/0615 ,  H01L29/0626 ,  H01L29/0661 ,  H01L29/0834 ,  H01L29/747 ,  H01L29/87

    Abstract: A mesa-type bidirectional Shockley diode delimited on its two surfaces by a peripheral groove filled with a glassivation including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of the regions of the first conductivity type, at the interface between the substrate and the corresponding layer of the second conductivity type, each buried region being complementary in projection with the other; and a peripheral ring under the external periphery of each of the glassivations, of same doping profile as the buried regions.

    Abstract translation: 台面型双向Shockley二极管在其两个表面上由填充有玻璃化的外围槽限定，包括第一导电类型的衬底; 在基板的每一侧上具有第二导电类型的层; 第二导电类型的每个层中的第一导电类型的区域; 在第一导电类型的每个区域下的第一导电类型的掩埋区域，在基板和第二导电类型的相应层之间的界面处，每个掩埋区域与另一个的突出互补; 以及在每个玻璃化的外围的外周环上，具有与掩埋区相同的掺杂分布。

    Case for miniature fuel cells
    64.
    发明授权
    Case for miniature fuel cells 有权
    小型燃料电池案例

    公开(公告)号：US08178233B2

    公开(公告)日：2012-05-15

    申请号：US12354312

    申请日：2009-01-15

    Applicant: Yann Bedu ,  Dominique Touzet ,  Jean-Paul Farroni

    Inventor： Yann Bedu ,  Dominique Touzet ,  Jean-Paul Farroni

    IPC: H01M2/02

    CPC classification number: H01M8/2475 ,  H01M8/0269 ,  H01M8/1097

    Abstract: A case for fuel cells including an upper plate formed of a stack of a first insulating board, portions of a first conductive layer, a second insulating board, and a second conductive layer, this stack including windows, fuel cells being placed under the first insulating board at the level of the windows to obstruct them, the stack further comprising first openings filled with a heat-transmitting material forming a contact between the periphery of the fuel cells and the second conductive layer.

    Abstract translation: 一种燃料电池的壳体，包括由第一绝缘板的堆叠形成的上板，第一导电层，第二绝缘板和第二导电层的部分，该堆叠包括窗口，燃料电池被放置在第一绝缘 板在水平面上阻挡它们，堆叠还包括填充有形成燃料电池的周边与第二导电层之间的接触的传热材料的第一开口。

    PACKAGED COUPLER
    65.
    发明申请
    PACKAGED COUPLER 有权
    包装式联轴器

    公开(公告)号：US20120062333A1

    公开(公告)日：2012-03-15

    申请号：US13228178

    申请日：2011-09-08

    Applicant: Hilal Ezzeddine ,  Claire Laporte

    Inventor： Hilal Ezzeddine ,  Claire Laporte

    IPC: H01P5/18

    CPC classification number: H01P5/185 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

    Abstract: A distributed coupler including a first line intended to convey a radio signal between its two ends and a second line intended to sample, by coupling, part of the signal, wherein: one of the lines is formed on an insulating substrate; and the other line is formed in a lead frame supporting the substrate, one line being above the other.

    Abstract translation: 一种分布耦合器，包括用于在其两端之间传送无线电信号的第一线和用于通过耦合所述信号的一部分来采样的第二线，其中：所述线中的一条形成在绝缘基底上; 并且另一条线形成在支撑基板的引线框架中，一条线在另一条线之上。

    ASYMMETRICAL BIDIRECTIONAL PROTECTION COMPONENT
    66.
    发明申请
    ASYMMETRICAL BIDIRECTIONAL PROTECTION COMPONENT 有权
    不对称双向保护组件

    公开(公告)号：US20120061803A1

    公开(公告)日：2012-03-15

    申请号：US13210782

    申请日：2011-08-16

    Applicant: Benjamin Morillon

    Inventor： Benjamin Morillon

    IPC: H01L29/866 ,  H01L21/329

    CPC classification number: H01L29/66098 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/32 ,  H01L29/861 ,  Y10S438/983

    Abstract: An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first to area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.

    Abstract translation: 形成在第一导电类型的半导体衬底中的不对称双向保护部件，包括：第一导电类型的第一注入区域; 所述第二导电类型的第一外延层在所述衬底和所述第一注入区上; 所述第二导电类型的第二外延层在所述第一外延层上，所述第二层具有不同于所述第一层的掺杂水平; 所述第一导电类型的第二区域在所述外延层的外表面上与所述第一区域相对; 第一金属化覆盖基板的整个下表面; 以及覆盖所述第二区域的第二金属化。

    HIGH-VOLTAGE VERTICAL POWER COMPONENT
    67.
    发明申请
    HIGH-VOLTAGE VERTICAL POWER COMPONENT 有权
    高压垂直电源组件

    公开(公告)号：US20110210372A1

    公开(公告)日：2011-09-01

    申请号：US13037694

    申请日：2011-03-01

    Applicant: Samuel Menard ,  François Ihuel

    Inventor： Samuel Menard ,  François Ihuel

    IPC: H01L29/747

    CPC classification number: H01L29/747 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/0834

    Abstract: A high-voltage vertical power component including a lightly-doped semiconductor substrate of a first conductivity type and, on the side of an upper surface, an upper semiconductor layer of the second conductivity type which does not extend all the way to the component periphery, wherein the component periphery includes, on the lower surface side, a ring-shaped diffused region of the second conductivity type extending across from one third to half of the component thickness; and on the upper surface side, an insulated ring-shaped groove crossing the substrate to penetrate into an upper portion of ring-shaped region.

    Abstract translation: 一种高电压垂直功率分量，包括第一导电类型的轻掺杂半导体衬底，并且在上表面侧，不延伸到组件周边的第二导电类型的上半导体层， 其中所述部件周边在所述下表面侧包括跨越所述部件厚度的三分之一到一半的所述第二导电类型的环形扩散区域; 并且在上表面侧具有与基板交叉的绝缘环状槽，以穿透到环形区域的上部。

    DEVICE COMPRISING A HYDROGEN-AIR OR METHANOL-AIR TYPE FUEL CELL
    68.
    发明申请
    DEVICE COMPRISING A HYDROGEN-AIR OR METHANOL-AIR TYPE FUEL CELL 审中-公开
    包含氢气或甲醇 - 空气型燃料电池的装置

    公开(公告)号：US20110190037A1

    公开(公告)日：2011-08-04

    申请号：US13016285

    申请日：2011-01-28

    Applicant: Frédéric Cantin ,  Vincent Faucheux

    Inventor： Frédéric Cantin ,  Vincent Faucheux

    IPC: H04M1/00 ,  H01M8/04 ,  H01M8/06

    CPC classification number: H01M8/04156 ,  H01M8/04201 ,  H01M8/1097 ,  H01M8/2475

    Abstract: A device comprising a chamber in which a hydrogen-air or methanol-air type fuel cell is arranged, the chamber including an upper wall in which an opening is formed, a lower wall on which the cell is arranged so that the surface of exposure to air of the cell faces the upper wall, and a fan arranged in the opening.

    Abstract translation: 一种装置，包括其中布置有氢空气或甲醇 - 空气型燃料电池的室，所述室包括其中形成有开口的上壁，其上布置有所述电池的表面， 细胞的空气面向上壁，并且设置在开口中的风扇。

    METHOD FOR ENCAPSULATING ELECTRONIC COMPONENTS ON A WAFER
    69.
    发明申请
    METHOD FOR ENCAPSULATING ELECTRONIC COMPONENTS ON A WAFER 有权
    封装电子元件在WAFER上的方法

    公开(公告)号：US20110124157A1

    公开(公告)日：2011-05-26

    申请号：US12946986

    申请日：2010-11-16

    Applicant: Marc Feron ,  Vincent Jarry ,  Laurent Barreau

    Inventor： Marc Feron ,  Vincent Jarry ,  Laurent Barreau

    IPC: H01L21/56

    CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L23/3114 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01087

    Abstract: A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning down the wafer, except at least on its contour; filling the thinned-down region with a first resin layer; arranging at least one first chip on the first bonding pads and forming solder bumps on the second bonding pads; depositing a second resin layer covering the first chips and partially covering the solder bumps; bonding an adhesive strip on the first resin layer; and scribing the structure into individual chips.

    Abstract translation: 一种封装电子部件的方法，包括以下步骤：在半导体晶片的第一表面中形成电子部件; 在第一表面上形成包括由绝缘材料分隔开的导电轨道和通孔的互连堆叠; 在互连堆叠上形成第一和第二接合焊盘; 至少在轮廓上除外，使晶片变薄; 用第一树脂层填充薄的区域; 在所述第一接合焊盘上布置至少一个第一芯片，并在所述第二焊盘上形成焊料凸块; 沉积覆盖第一芯片并部分覆盖焊料凸块的第二树脂层; 将粘合带粘合在第一树脂层上; 并将结构划分成单个芯片。

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