公开(公告)号：US07218556B2

公开(公告)日：2007-05-15

申请号：US11097495

申请日：2005-04-01

Applicant: Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

Inventor： Hyun-Jo Kim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Young-Ki Ha ,  Kyung-Tae Nam

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.

Abstract translation: 提供了一种写入磁性随机存取存储器（MRAM）器件的方法。 该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。 此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。 读取MTJ的初始磁化状态并与期望的磁化状态进行比较。 当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个 ，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

公开(公告)号：US20070041243A1

公开(公告)日：2007-02-22

申请号：US11465075

申请日：2006-08-16

Applicant: Jun-Soo BAE ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Kyung-Tae NAM

Inventor： Jun-Soo BAE ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Kyung-Tae NAM

IPC: G11C11/00

CPC classification number: G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/08

Abstract: There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.

Abstract translation: 提供了一种磁存储器件及其形成方法。 磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。 在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。 在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。 在存储和无引导模式之间插入一个自由的反转模式。 自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

公开(公告)号：US20070041125A1

公开(公告)日：2007-02-22

申请号：US11552085

申请日：2006-10-23

Applicant: Young-Ki HA ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Jun-Soo BAE ,  In-Gyu BAEK

Inventor： Young-Ki HA ,  Jang-Eun LEE ,  Hyun-Jo KIM ,  Se-Chung OH ,  Jun-Soo BAE ,  In-Gyu BAEK

IPC: G11B5/17

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.

Abstract translation: 提供了一种磁性隧道结结构及其制造方法。 磁性隧道结结构包括依次形成在下电极上的下电极，下磁层图案和隧道层图案。 磁隧道结结构还包括依次形成在隧道层图案的一部分上的上磁层图案，缓冲层图案和上电极。 上部磁性层图案的侧壁由氧化的上部磁性层包围，缓冲层图案的侧壁由氧化的缓冲层包围。 可以通过氧化缓冲层来防止磁性隧道结区域中上部磁性层图案和下部磁性层图案的消耗。

公开(公告)号：US20050230771A1

公开(公告)日：2005-10-20

申请号：US11103078

申请日：2005-04-11

Applicant: Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

Inventor： Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

CPC classification number: G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

Abstract: Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.

Abstract translation: 提供了在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性RAM单元和其形成中使用的光掩模。 磁性隧道结结构具有钉扎层图案，隧道绝缘层图案和自由层图案，其堆叠在集成电路基板上。 至少自由层图案具有主体以及当从俯视图观察时各自从主体的两端突出的第一和第二弯曲末端。

公开(公告)号：US20050035386A1

公开(公告)日：2005-02-17

申请号：US10915872

申请日：2004-08-10

Applicant: Young-Ki Ha ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Se-Chung Oh ,  Jun-Soo Bae ,  In-Gyu Baek

Inventor： Young-Ki Ha ,  Jang-Eun Lee ,  Hyun-Jo Kim ,  Se-Chung Oh ,  Jun-Soo Bae ,  In-Gyu Baek

IPC: G11C11/15 ,  H01L21/00 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: There are provided a magnetic tunnel junction structure and a method of fabricating the same. The magnetic tunnel junction structure includes a lower electrode, a lower magnetic layer pattern and a tunnel layer pattern, which are sequentially formed on the lower electrode. The magnetic tunnel junction structure further includes an upper magnetic layer pattern, a buffer layer pattern, and an upper electrode, which are sequentially formed on a portion of the tunnel layer pattern. The sidewall of the upper magnetic layer pattern is surrounded by an oxidized upper magnetic layer, and the sidewall of the buffer layer pattern is surrounded by an oxidized buffer layer. The depletion of the upper magnetic layer pattern and the lower magnetic layer pattern in the magnetic tunnel junction region can be prevented by the oxidized buffer layer.

Abstract translation: 提供了一种磁性隧道结结构及其制造方法。 磁性隧道结结构包括依次形成在下电极上的下电极，下磁层图案和隧道层图案。 磁隧道结结构还包括依次形成在隧道层图案的一部分上的上磁层图案，缓冲层图案和上电极。 上部磁性层图案的侧壁由氧化的上部磁性层包围，缓冲层图案的侧壁由氧化的缓冲层包围。 可以通过氧化缓冲层来防止磁性隧道结区域中上部磁性层图案和下部磁性层图案的消耗。

公开(公告)号：US09761792B2

公开(公告)日：2017-09-12

申请号：US14887506

申请日：2015-10-20

Applicant: Kyu-Man Hwang ,  Shi-Jung Kim ,  Mi-Lim Park ,  Jun-Soo Bae ,  Seung-Woo Lee

Inventor： Kyu-Man Hwang ,  Shi-Jung Kim ,  Mi-Lim Park ,  Jun-Soo Bae ,  Seung-Woo Lee

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.

公开(公告)号：US08772121B2

公开(公告)日：2014-07-08

申请号：US13443132

申请日：2012-04-10

Applicant: Kyu-Man Hwang ,  Jun-Soo Bae ,  Sung-Un Kwon ,  Kwang-Ho Park

Inventor： Kyu-Man Hwang ,  Jun-Soo Bae ,  Sung-Un Kwon ,  Kwang-Ho Park

IPC: H01L21/20 ,  H01L21/8222 ,  H01L29/02 ,  H01L47/00 ,  H01L29/40 ,  H01L29/768

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1683

Abstract: A method of manufacturing a phase change memory device includes forming a lower electrode layer pattern and an insulating interlayer covering the lower electrode layer pattern, forming a first opening in the insulating interlayer to expose the lower electrode layer pattern, forming an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern by partially removing the oxide layer and the lower electrode layer pattern, forming an insulation layer filling a remaining portion of the first opening, removing the oxide layer pattern by a wet etching process to form a second opening, and forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.

Abstract translation: 一种制造相变存储器件的方法包括：形成下电极层图案和覆盖下电极层图案的绝缘夹层，在绝缘中间层中形成第一开口以露出下电极层图案，在其上形成氧化层图案 通过部分地除去氧化物层和下部电极层图案，形成绝缘层，在第一开口的侧壁和下部电极的下方形成氧化物层图案，形成绝缘层，填充第一开口的剩余部分，通过湿蚀刻工艺去除氧化物层图案 以形成第二开口，并且在下电极上形成相变材料图案，使得相变材料图案填充第二开口。

公开(公告)号：US20110306173A1

公开(公告)日：2011-12-15

申请号：US13084657

申请日：2011-04-12

Applicant: Jun-Soo BAE ,  Suk-Hun CHOI ,  Won-Jun LEE ,  Joon-Sang PARK

Inventor： Jun-Soo BAE ,  Suk-Hun CHOI ,  Won-Jun LEE ,  Joon-Sang PARK

IPC: H01L21/02

CPC classification number: H01L45/1683 ,  H01L45/06 ,  H01L45/141

Abstract: A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.

Abstract translation: 制造相变存储器件的方法包括使用第一，第二和第三抛光工艺。 第一抛光工艺使用第一牺牲层形成第一接触部分，并且第二抛光工艺使用第二牺牲层形成相变材料图案。 在去除第一和第二牺牲层以暴露第一接触部分的相应突出结构和相变材料图案之后，使用第三抛光工艺来使用绝缘层作为抛光停止层来抛光所得的突出结构。

公开(公告)号：US20100019216A1

公开(公告)日：2010-01-28

申请号：US12568402

申请日：2009-09-28

Applicant: Jeong-Hee Park ,  Ju-Chul Park ,  Jun-Soo Bae ,  Bong-Jin Kuh ,  Yong-Ho Ha

Inventor： Jeong-Hee Park ,  Ju-Chul Park ,  Jun-Soo Bae ,  Bong-Jin Kuh ,  Yong-Ho Ha

IPC: H01L47/00

CPC classification number: H01L45/06 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

Abstract: A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

Abstract translation: 可变相存储器件包括相变材料图案，以及电连接到相变材料图案的第一和第二电极。 第一和第二电极被配置为向相变材料图案提供电信号。 相变材料图案包括第一相变材料层和第二相变材料层。 第一和第二可相变材料图案具有不同的化学，物理和/或电特性。 例如，第二相变材料层可以具有比第一相变材料层更大的电阻率。 例如，第一相变材料层可以包括第一浓度的氮，第二相变材料层可以包括大于第一浓度的第二浓度的氮。 还讨论了相关设备和制造方法。

公开(公告)号：US20090230445A1

公开(公告)日：2009-09-17

申请号：US12435664

申请日：2009-05-05

Applicant: Jun-Soo Bae ,  Jong-Bong Park

Inventor： Jun-Soo Bae ,  Jong-Bong Park

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y10/00 ,  H01L27/228

Abstract: A magnetic memory device includes a first magnetic layer having opposing sidewalls, a tunnel barrier layer on the first magnetic layer, the tunnel barrier layer having a top surface and having opposing sidewalls aligned with the opposing sidewalls of the first magnetic layer, and a second magnetic layer on the tunnel barrier layer, the second magnetic layer having a bottom surface that is narrower than the top surface of the tunnel barrier layer and opposing sidewalls that are spaced apart from the opposing sidewalls of the tunnel barrier layer. A conductive capping layer having opposing sidewalls aligned with the opposing sidewalls of the second magnetic layer is on the second magnetic layer.

Abstract translation: 磁存储器件包括具有相对侧壁的第一磁性层，在第一磁性层上的隧道阻挡层，隧道势垒层具有顶表面并且具有与第一磁性层的相对侧壁对准的相对侧壁，以及第二磁性层 所述第二磁性层具有比所述隧道势垒层的顶表面窄的底表面和与所述隧道势垒层的相对侧壁间隔开的相对侧壁。 具有与第二磁性层的相对侧壁对准的相对侧壁的导电覆盖层位于第二磁性层上。