SEMICONDUCTOR DEVICE
    64.
    发明公开

    公开(公告)号:US20230145055A1

    公开(公告)日:2023-05-11

    申请号:US17918809

    申请日:2021-04-12

    CPC classification number: H01L29/78 H01L29/1602 H01L29/41

    Abstract: The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer. The semiconductor device includes a first semiconductor layer of a first conductivity type which is either a p-type or an n-type conductivity type, a source portion arranged so as to be in contact with the first semiconductor layer and configured as a semiconductor portion of a second conductivity type different from the first conductivity type, a source electrode arranged in ohmic contact with the source portion, a gate electrode arranged on at least one selected from surfaces of the first semiconductor layer via a gate insulating film interposed therebetween and capable of forming by an applied electric field, an inversion layer in a region of the first semiconductor layer near the surface of the first semiconductor layer contacting the gate insulating film, a second semiconductor layer of the first conductivity type arranged so as to be in contact with the inversion layer, and a drain electrode separated from the inversion layer and arranged in Schottky contact with the second semiconductor layer.

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