公开(公告)号：US07733446B2

公开(公告)日：2010-06-08

申请号：US11093223

申请日：2005-03-30

Applicant: Yuichi Masutani ,  Shingo Nagano ,  Takuji Yoshida ,  Nobuaki Ishiga ,  Kazunori Inoue

Inventor： Yuichi Masutani ,  Shingo Nagano ,  Takuji Yoshida ,  Nobuaki Ishiga ,  Kazunori Inoue

IPC: G02F1/136 ,  G02F1/1335

CPC classification number: G02F1/13458 ,  G02F1/133555 ,  G02F1/13439 ,  G02F1/136227

Abstract: The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.

Abstract translation: 本发明旨在提供一种半透射型液晶显示装置的制造方法，其中简化了其结构和制造方法的方法，从而能够降低制造成本。 为了实现上述目的，本发明的半透射型液晶显示装置具有：反射像素电极形成有构成源电极，漏电极，源极配线的第二导电膜的层结构， 因此在第二金属膜的上层上，通过绝缘膜形成由透明导电膜构成的透射性像素电极。 可以通过5倍的光刻工艺形成TFT阵列基板。

公开(公告)号：US07473151B2

公开(公告)日：2009-01-06

申请号：US10438199

申请日：2003-05-15

Applicant: Osamu Toyoda ,  Motonari Kifune ,  Mituji Yamamoto ,  Kazunori Inoue

Inventor： Osamu Toyoda ,  Motonari Kifune ,  Mituji Yamamoto ,  Kazunori Inoue

IPC: H01J9/00

CPC classification number: H01J9/242 ,  H01J2211/36

Abstract: A method of manufacturing a substrate for a flat panel display includes forming grooves in a bottom surface of a float glass substrate by a subtractive process to form barrier ribs. The barrier ribs include the protrusions remaining between the respective grooves.

Abstract translation: 制造平板显示器用基板的方法包括：通过减法法在浮法玻璃基板的底面形成槽，形成隔壁。 阻挡肋包括保留在各个槽之间的突起。

公开(公告)号：US07420215B2

公开(公告)日：2008-09-02

申请号：US11767217

申请日：2007-06-22

Applicant: Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

Inventor： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01J29/28 ,  G02F1/13439 ,  G02F1/13458 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2227/323

Abstract: A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Abstract translation: 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。

公开(公告)号：US20080191211A1

公开(公告)日：2008-08-14

申请号：US12029958

申请日：2008-02-12

Applicant: Shinichi Yano ,  Kazunori Inoue ,  Nobuaki Ishiga

Inventor： Shinichi Yano ,  Kazunori Inoue ,  Nobuaki Ishiga

IPC: H01L29/04 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L27/1288 ,  H01L29/458

Abstract: A thin film transistor array substrate includes a gate electrode formed on a substrate, a gate insulating film formed over the gate electrode, a source electrode and a drain electrode that are formed on the gate insulating film and include a transparent conductive film and a metal film formed on the transparent conductive film, a semiconductor film formed over the source electrode and the drain electrode to be electrically connected to the source electrode and the drain electrode, and a pixel electrode formed extending from the drain electrode.

Abstract translation: 薄膜晶体管阵列基板包括形成在基板上的栅极电极，形成在栅极电极上的栅极绝缘膜，形成在栅极绝缘膜上的源极和漏极，并且包括透明导电膜和金属膜 形成在所述透明导电膜上的半导体膜，形成在所述源电极和所述漏电极之间以与所述源电极和所述漏电极电连接的半导体膜，以及从所述漏电极形成的像素电极。

公开(公告)号：US20080122314A1

公开(公告)日：2008-05-29

申请号：US11987268

申请日：2007-11-28

Applicant: Takashi Yamashita ,  Keiji Tsuda ,  Shunichi Aikawa ,  Kazunori Inoue ,  Takashi Matsuda

Inventor： Takashi Yamashita ,  Keiji Tsuda ,  Shunichi Aikawa ,  Kazunori Inoue ,  Takashi Matsuda

IPC: H01L41/08

CPC classification number: H03H9/1092 ,  H01L2224/11 ,  H01L2924/16235 ,  H03H9/059

Abstract: An acoustic wave device includes an acoustic wave element provided on a substrate, a wiring that is provided on the substrate and is electrically connected to the acoustic wave element, a sealing portion that is provided on the substrate so as to cover the acoustic wave element and the wiring, and an insulating layer that is provided on a whole area between the substrate and the sealing portion and between the wiring and the sealing portion.

Abstract translation: 声波装置包括：设置在基板上的声波元件，设置在基板上并与声波元件电连接的布线;密封部，其设置在基板上以覆盖声波元件;以及 布线和设置在基板和密封部分之间以及布线和密封部分之间的整个区域上的绝缘层。

公开(公告)号：US20060226546A1

公开(公告)日：2006-10-12

申请号：US10536406

申请日：2003-10-29

Applicant: Kazunori Inoue ,  Chiharu Ishikura

Inventor： Kazunori Inoue ,  Chiharu Ishikura

IPC: H01L29/40 ,  H01L21/44

CPC classification number: C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/01047 ,  H01L2924/01204 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/013 ,  H01L2924/00

Abstract: According to the present invention, there is provided an alloy material for semiconductors containing of Au as a main component and Ag in the range of not less than 3 wt % to not more than 40 wt %.

Abstract translation: 根据本发明，提供了以Au为主成分的半导体用合金材料，Ag为3重量％以上且40重量％以下的范围。

公开(公告)号：US07084017B2

公开(公告)日：2006-08-01

申请号：US10973402

申请日：2004-10-27

Applicant: Nobuhiro Nakamura ,  Kazunori Inoue ,  Takuji Yoshida ,  Kazuhiro Kobayashi ,  Ken Nakashima

Inventor： Nobuhiro Nakamura ,  Kazunori Inoue ,  Takuji Yoshida ,  Kazuhiro Kobayashi ,  Ken Nakashima

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC classification number: G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136236

Abstract: A thin film transistor array substrate including an insulating substrate, a first metallic pattern formed on the insulating substrate, and an insulating film provided on the first metallic pattern. A semiconductor pattern is provided on the insulating film, and a second metallic pattern is provided on the semiconductor pattern. The second metallic pattern is surrounded by the semiconductor pattern.

Abstract translation: 一种薄膜晶体管阵列基板，包括绝缘基板，形成在所述绝缘基板上的第一金属图案以及设置在所述第一金属图案上的绝缘膜。 半导体图案设置在绝缘膜上，第二金属图案设置在半导体图案上。 第二金属图案被半导体图案包围。

公开(公告)号：US07030545B2

公开(公告)日：2006-04-18

申请号：US10427554

申请日：2003-04-30

Applicant: Kazunori Inoue ,  Keiichi Betsui ,  Tadashi Nakatani ,  Osamu Toyoda

Inventor： Kazunori Inoue ,  Keiichi Betsui ,  Tadashi Nakatani ,  Osamu Toyoda

IPC: H01J1/02 ,  H01J1/62

CPC classification number: H01J1/3042 ,  H01J9/025

Abstract: A field-emission cathode having an emitter provided with a substrate, an emitter electrode layer, an insulating layer, a gate electrode layer, the layers being formed on the substrate in this order, needlelike projections for electron emission provided on the emitter electrode layer in a gate opening from which the insulating layer and the gate electrode layer are removed and each grown from one point in a given direction, and different projections for electron emission formed on all or part of the projections. The projections of the emitter are made of metallic particles, and thereby the manufacturing cost is lowered.

Abstract translation: 具有发射极的场致发射阴极，具有基板，发射极电极层，绝缘层，栅电极层，依次形成在基板上的层，在发射极电极层上设置用于电子发射的针状突起 去除绝缘层和栅电极层的栅极开口，并且每个沿给定方向从一个点生长，并且在全部或部分突起上形成不同的电子发射突起。 发射体的突起由金属颗粒制成，从而制造成本降低。

公开(公告)号：US20060021529A1

公开(公告)日：2006-02-02

申请号：US11174459

申请日：2005-07-06

Applicant: Osamu Toyoda ,  Kazunori Inoue ,  Akira Tokai

Inventor： Osamu Toyoda ,  Kazunori Inoue ,  Akira Tokai

IPC: B41M1/10

CPC classification number: B41M1/10 ,  B41M3/006

Abstract: The present invention provides a new and highly reliable substrate manufacturing technology for manufacturing a substrate with a protrusion pattern, which can decrease structural defects caused by involving bubbles when the protrusion pattern is formed, can improve the reliability of the product and the yield of the product, does not require off-line steps such as vacuum deaeration, and therefore improves the production efficiency and simplifies the steps. According to the present invention, a molding material paste is filled into the concave portions of an intaglio plate for filling, an intaglio plate for transfer on which a specific groove pattern is formed is partially contacted with the intaglio plate for filling, the molding material is filled into the grooves of the intaglio plate for transfer, then the molding material is transferred from the intaglio plate for transfer to a substrate as a protrusion pattern.

公开(公告)号：US20050219451A1

公开(公告)日：2005-10-06

申请号：US11093223

申请日：2005-03-30

Applicant: Yuichi Masutani ,  Shingo Nagano ,  Takkuji Yoshida ,  Nobuaki Ishiga ,  Kazunori Inoue

Inventor： Yuichi Masutani ,  Shingo Nagano ,  Takkuji Yoshida ,  Nobuaki Ishiga ,  Kazunori Inoue

IPC: G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/13458 ,  G02F1/133555 ,  G02F1/13439 ,  G02F1/136227

Abstract: The present invention intends to provide a manufacturing method of a semi-transmissive liquid crystal display device in which method a structure and manufacturing process thereof are simplified to enable to reduce the manufacturing cost. In order to achieve the above object, a semi-transmissive liquid crystal display device in the invention has a layer constitution in which a reflective pixel electrode is formed with a second conductive film that constitutes a source electrode, a drain electrode, a source wiring and so on and on an upper layer of the second metal film a transmissive pixel electrode made of a transparent conductive film is formed through the insulating film. A TFT array substrate can be formed through 5 times of photoengraving process.

Abstract translation: 本发明旨在提供一种半透射型液晶显示装置的制造方法，其中简化了其结构和制造方法的方法，从而能够降低制造成本。 为了实现上述目的，本发明的半透射型液晶显示装置具有：反射像素电极形成有构成源电极，漏电极，源极配线的第二导电膜的层结构， 因此在第二金属膜的上层上，通过绝缘膜形成由透明导电膜构成的透射性像素电极。 可以通过5倍的光刻工艺形成TFT阵列基板。