公开(公告)号：USD619619S1

公开(公告)日：2010-07-13

申请号：US29342465

申请日：2009-08-25

Applicant: Kyung Ho Lee

Designer： Kyung Ho Lee

公开(公告)号：USD612367S1

公开(公告)日：2010-03-23

申请号：US29263959

申请日：2006-08-01

Applicant: Kyung Ho Lee

Designer： Kyung Ho Lee

公开(公告)号：US20100065896A1

公开(公告)日：2010-03-18

申请号：US12585501

申请日：2009-09-16

Applicant: Kyung-Ho Lee ,  Kwang-il Jung ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyoung-Sik Moon ,  Bum-Suk Kim ,  Young-Bae Kee ,  Dong-Young Lee ,  Tae-Sub Jung ,  Kang-Sun Lee

Inventor： Kyung-Ho Lee ,  Kwang-il Jung ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyoung-Sik Moon ,  Bum-Suk Kim ,  Young-Bae Kee ,  Dong-Young Lee ,  Tae-Sub Jung ,  Kang-Sun Lee

IPC: H01L31/112 ,  H01L31/18 ,  H01L21/20

CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.

Abstract translation: 像素单元包括外延层中的衬底，外延层和光转换器件。 外延层具有压花形状的掺杂浓度分布，并且包括层叠在基板上的多个层。 光转换装置不包括在垂直方向上具有恒定电位的中性区域。 因此，包括像素单元的图像传感器具有高量化效率，并且光转换装置之间的串扰减小。

公开(公告)号：US20090209058A1

公开(公告)日：2009-08-20

申请号：US12320543

申请日：2009-01-29

Applicant: Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

Inventor： Yi Tae Kim ,  Kyung Ho Lee ,  Sae-Young Kim ,  Yun Ho Jang ,  Jung Chak Ahn

IPC: H01L31/18 ,  H01L21/768

CPC classification number: H01L27/14643 ,  H01L27/14623 ,  H01L27/14632

Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.

Abstract translation: 提供一种制造图像传感器的方法。 在该方法中，可以在半导体衬底内形成光电转换单元，其中半导体衬底包括有源像素区域和光学黑色区域。 可以在有源像素区域和光学黑色区域上形成退火层并进行蚀刻，使得退火层覆盖光学黑色区域的至少一部分。 可以在退火层上形成布线图案。 可以在布线图案上形成遮光图案，以覆盖光学黑色区域的整个光电转换单元，从而阻止光入射到光学黑色区域。

公开(公告)号：US20090151988A1

公开(公告)日：2009-06-18

申请号：US12213570

申请日：2008-06-20

Applicant: Kyung Ho Lee ,  Se Min Oh ,  Chang Hwan Choi ,  Choon Keun Lee ,  Jeong Yeol Moon ,  Jong Rip Kim

Inventor： Kyung Ho Lee ,  Se Min Oh ,  Chang Hwan Choi ,  Choon Keun Lee ,  Jeong Yeol Moon ,  Jong Rip Kim

IPC: H05K1/02 ,  H05K3/22

CPC classification number: H05K1/028 ,  H05K1/0218 ,  H05K2201/0191 ,  H05K2201/0352 ,  H05K2201/0715 ,  H05K2201/09736 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49126

Abstract: An FPCB and a method of manufacturing the same, in which an electrical signal-conductive portion of the FPCB is subjected to little stress so as not to be broken by fatigue in spite of repeated bending of the FPCB, thereby increasing the lifetime of the FPCB.

Abstract translation: FPCB及其制造方法，其中FPCB的电信号传导部分经受很小的应力，以便尽管FPCB的反复弯曲而不会被疲劳破坏，从而增加FPCB的寿命 。

公开(公告)号：US20090140439A1

公开(公告)日：2009-06-04

申请号：US12364475

申请日：2009-02-02

Applicant: Chull Won Ju ,  Byoung Gue Min ,  Seong II Kim ,  Jong Min Lee ,  Kyung Ho Lee ,  Young II Kang

Inventor： Chull Won Ju ,  Byoung Gue Min ,  Seong II Kim ,  Jong Min Lee ,  Kyung Ho Lee ,  Young II Kang

IPC: H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541

Abstract: Provided are a chip, a chip stack, and a method of manufacturing the Same. A plurality of chips which each include: at least one pad formed on a wafer; and a metal layer which protrudes up to a predetermined thickness from the bottom of the wafer and is formed in a via hole exposing the bottom of the pad are stacked such that the pad and the metal layer of adjacent chips are bonded. This leads to a simplified manufacturing process, high chip performance and a small footprint for a chip stack.

Abstract translation: 提供了芯片，芯片堆叠以及制造该芯片的方法。 多个芯片，每个芯片包括：形成在晶片上的至少一个焊盘; 并且从晶片的底部突出到预定厚度并且形成在露出焊盘底部的通孔中的金属层被堆叠成使得焊盘和相邻芯片的金属层接合。 这导致了简化的制造工艺，高芯片性能和用于芯片堆叠的小占地面积。

公开(公告)号：US20080224191A1

公开(公告)日：2008-09-18

申请号：US12074573

申请日：2008-03-05

Applicant: Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyung-Ho Lee ,  Hyuck-In Kwon ,  Ju-Hyun Ko ,  Tetsuo Asaba ,  Jong-Jin Lee ,  Su-Hun Lim ,  Jung-Yeon Kim ,  Se-Young Kim ,  Sung-In Hwang

Inventor： Jung-Chak Ahn ,  Yi-Tae Kim ,  Kyung-Ho Lee ,  Hyuck-In Kwon ,  Ju-Hyun Ko ,  Tetsuo Asaba ,  Jong-Jin Lee ,  Su-Hun Lim ,  Jung-Yeon Kim ,  Se-Young Kim ,  Sung-In Hwang

IPC: H01L31/101

CPC classification number: H01L29/0847 ,  H01L27/14609 ,  H01L29/1083 ,  H01L29/78

Abstract: An image pickup device includes an active pixel sensor (APS), a row driver, and a leakage current breaker. The active pixel sensor includes an array of a plurality of pixels. The row driver selects at least one pixel to be activated to output signals. The leakage current breaker decreases the leakage current through the unselected pixels by applying a leakage current breaker voltage at the bit lines of the APS array.

Abstract translation: 图像拾取装置包括有源像素传感器（APS），行驱动器和泄漏电流断路器。 有源像素传感器包括多个像素的阵列。 行驱动器选择要激活的至少一个像素来输出信号。 泄漏电流断路器通过在APS阵列的位线处施加泄漏电流断路器电压来减小通过未选择的像素的泄漏电流。

公开(公告)号：US20080179642A1

公开(公告)日：2008-07-31

申请号：US11983913

申请日：2007-11-13

Applicant: Kyung-ho Lee ,  Yi-tae Kim ,  Jung-chak Ahn ,  Sae-young Kim

Inventor： Kyung-ho Lee ,  Yi-tae Kim ,  Jung-chak Ahn ,  Sae-young Kim

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

Abstract: A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

Abstract translation: CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。 浮动扩散区域是第二导电类型。 转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。 袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

公开(公告)号：US07364977B2

公开(公告)日：2008-04-29

申请号：US10857655

申请日：2004-05-28

Applicant: Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

Inventor： Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

IPC: H01L21/8222

CPC classification number: H01L29/66318 ,  H01L29/7371

Abstract: Disclosed are a heterojunction bipolar transistor and a method of fabricating the same. A first dielectric layer easily etched is deposited on the overall surface of a substrate before an isolation region is defined. The first dielectric layer and a sub-collector layer are selectively etched, and then a second dielectric layer etched at a low etch rate is deposited on the overall surface of the substrate. Via holes are formed in the first and second dielectric layers, and then the first dielectric layer is removed using a difference between etch characteristics of the first and second dielectric layers. Accordingly, a reduction in power gain, generated at the interface of a compound semiconductor and a dielectric insulating layer (the second dielectric layer), can be eliminated.

Abstract translation: 公开了异质结双极晶体管及其制造方法。 在限定隔离区之前，易于蚀刻的第一电介质层沉积在基板的整个表面上。 选择性地蚀刻第一介电层和次集电极层，然后以低蚀刻速率蚀刻的第二电介质层沉积在基板的整个表面上。 在第一和第二电介质层中形成通孔，然后使用第一和第二电介质层的蚀刻特性之间的差异去除第一介电层。 因此，可以消除在化合物半导体和介电绝缘层（第二介电层）的界面处产生的功率增益的降低。

公开(公告)号：US20080055117A1

公开(公告)日：2008-03-06

申请号：US11782775

申请日：2007-07-25

Applicant: Kyung Ho LEE

Inventor： Kyung Ho LEE

IPC: H03K17/94

CPC classification number: G06F3/0233 ,  G06F3/0236

Abstract: There are provided a character entry apparatus and a character entry method using numeric keys, the character entry apparatus including: a number input section having ten numeric keys of 0 to 9 for entry of a number set corresponding to a desired character; a display for displaying the character corresponding to the number set; and a controller for storing a character input table providing an arrangement of a plurality of characters each corresponding to a number set and when a number set is input through the number input section, controlling to display the corresponding character arranged in the character input table and associated with the number set through the display, the number set being formed to include a first number selected from a first number group having a plurality of numbers and a second number selected from a second number group having a plurality of numbers arranged independent of the first number group. The character entry apparatus and method may enhance the character input speed and simplify the character entry procedure.

Abstract translation: 提供了一种使用数字键的字符输入装置和字符输入方法，所述字符输入装置包括：数字输入部分，具有用于输入与期望字符对应的数字集的0到9的数字键; 用于显示与所述数字集相对应的字符的显示器; 以及控制器，用于存储提供多个字符的排列的字符输入表，每个字符对应于一个数字集合，并且当通过数字输入部分输入数字集合时，控制显示排列在字符输入表中的相应字符和相关联的 其中通过显示器设置的号码，所设置的号码被形成为包括从具有多个号码的第一号码组中选出的第一号码和选自具有独立于第一号码的多个号码的第二号码组的第二号码 组。 字符输入装置和方法可以增强字符输入速度并简化字符输入过程。