公开(公告)号：US20090142929A1

公开(公告)日：2009-06-04

申请号：US11947038

申请日：2007-11-29

Applicant: Lee CHEN ,  Merritt FUNK

Inventor： Lee CHEN ,  Merritt FUNK

IPC: H01L21/302

CPC classification number: H01L21/32136 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/31116 ,  H01L21/32137

Abstract: A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the method comprises exposing the substrate to a high pressure plasma in the process chamber.

Abstract translation: 描述了在宽压力范围内用等离子体处理衬底的方法。 该方法包括将基板暴露于处理室中的低压等离子体。 此外，该方法包括将衬底暴露于处理室中的高压等离子体。

公开(公告)号：US07517708B2

公开(公告)日：2009-04-14

申请号：US11668553

申请日：2007-01-30

Applicant: Sachin Deshpande ,  Merritt Funk

Inventor： Sachin Deshpande ,  Merritt Funk

IPC: H01L21/00

CPC classification number: G01B11/06

Abstract: The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer temperature data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer temperature data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）程序来处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息， 或其任何组合。 RTPT程序可以使用实时晶片温度数据来创建，修改和/或使用测量配方数据，测量简档数据和/或测量模型数据。 此外，RTPT程序可以使用实时晶片温度数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US20090090852A1

公开(公告)日：2009-04-09

申请号：US11869656

申请日：2007-10-09

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H05H3/06

CPC classification number: H05H3/06

Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括泵送系统，其能够使用中性束源用于半导体处理应用，例如蚀刻工艺。

公开(公告)号：US20090082983A1

公开(公告)日：2009-03-26

申请号：US11859596

申请日：2007-09-21

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

IPC: G06F19/00

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention can provide a method of processing a substrate using S-O processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures.

Abstract translation: 本发明可以提供使用S-O处理序列处理衬底的方法以及可以包括一个或多个优化的间隔物产生和评估程序的评估库。

公开(公告)号：US07477960B2

公开(公告)日：2009-01-13

申请号：US11058321

申请日：2005-02-16

Applicant: James E. Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

Inventor： James E. Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC: G06F19/00

CPC classification number: G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

Abstract: A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

Abstract translation: 一种用于在APC系统中实现FDC的方法，包括从存储器接收FDC模型; 将FDC模型提供给过程模型计算引擎; 使用过程模型计算引擎计算预测的依赖过程参数的向量; 接收包括一组配方参数的处理配方，向处理模块提供处理配方; 执行过程配方以产生测量的依赖过程参数的向量; 计算预测的依赖过程参数的向量与测量的依赖过程参数的向量之间的差; 将差值与阈值进行比较; 并且当差值大于阈值时声明故障状况。

公开(公告)号：US20080311687A1

公开(公告)日：2008-12-18

申请号：US11762258

申请日：2007-06-13

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager ,  Lee Chen ,  Radha Sundararajan

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager ,  Lee Chen ,  Radha Sundararajan

IPC: H01L21/306

CPC classification number: H01L21/32137 ,  H01L21/28017 ,  H01L22/12 ,  H01L22/20 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention can provide a method of processing a substrate using Gate-Optimization processing sequences and evaluation libraries that can include gate-etch procedures, COR-etch procedures, and evaluation procedures.

Abstract translation: 本发明可以提供使用Gate-Optimization处理序列和评估库来处理衬底的方法，所述评估库可包括栅极蚀刻程序，COR蚀刻程序和评估程序。

公开(公告)号：US20080224364A1

公开(公告)日：2008-09-18

申请号：US11684957

申请日：2007-03-12

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: B29C43/10

CPC classification number: H01L21/3065 ,  H01L21/02071 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67253 ,  H01L21/6838 ,  Y10S438/905 ,  Y10S438/935

Abstract: A method is provided to cause deformation of a substrate during processing of the substrate. The method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, by separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.

Abstract translation: 提供了一种在衬底加工期间引起衬底变形的方法。 该方法包括将基板支撑在真空室中用于处理的基板支撑件上; 通过位于基板支撑件的相应多个区域中的多个端口中的每一个端口的入口端口提供背面气体到基板支撑件和基板之间的空间，基板支撑件的每个区域具有至少一个背面 连接到后侧气体供应的气体入口和连接到真空排气系统的至少一个出口; 并且分别控制多个端口中的不同端口处的背侧气体的压力，在各个端口周围的区域中分别控制施加在基板的背面上的局部压力，通过分别动态地控制至少 一个阀影响到每个所述区域的端口的气体流动，同时单独地动态地控制影响来自围绕所述引入气体的所述端口的每个所述区域的剩余多个端口的气体流的至少一个其他阀。

公开(公告)号：US20080183412A1

公开(公告)日：2008-07-31

申请号：US11668572

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G06F19/00

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer thickness data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer thickness data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）程序来处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息， 或其任何组合。 RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用测量配方数据，测量简档数据和/或测量模型数据。 此外，RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US20080183411A1

公开(公告)日：2008-07-31

申请号：US11668690

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: G06F19/00

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying. The real time wafer characteristic data may be real time wafer thickness data.

Abstract translation: 一种用于促进半导体晶片的ODP测量的方法。 该方法包括获得在所述晶片上的测量位置的实时晶片特征数据，并且从晶片的测量位置内的结构检测测量的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。 实时晶片特性数据可以是实时晶片厚度数据。

公开(公告)号：US20070233426A1

公开(公告)日：2007-10-04

申请号：US11396112

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel Prager

Inventor： Merritt Funk ,  Daniel Prager

IPC: G06F19/00 ,  G06F17/40

CPC classification number: G01R31/307 ,  G01R31/2846

Abstract: A method of using a virtual profile library to determine the profile of an integrated circuit structure includes measuring a signal off the structure with a metrology device. The measurement generates a measured signal. The measured signal is compared to a plurality of signals in at least one library. The comparison is stopped if a matching criteria is met. A subset of a virtual profile data space associated with the virtual profile library is determined when a matching criteria is not met. The subset is determined using profile data space associated with the at least one library. A virtual profile signal of the subset of the virtual profile data space is selected. A virtual profile shape and/or virtual profile parameters are determined based on the virtual profile signal. A difference is calculated between the measured signal and the virtual profile signal. The difference is compared to a virtual profile library creation criteria. If the virtual profile library creation criteria is met, then the structure is identified using virtual profile data, which includes the virtual profile shape and/or the virtual profile parameters, associated with the virtual profile signal. Or, if the virtual profile library creation criteria is not met, then a corrective action is applied.

Abstract translation: 使用虚拟简档库来确定集成电路结构的简档的方法包括使用测量装置测量离开结构的信号。 测量产生测量信号。 将测量的信号与至少一个库中的多个信号进行比较。 如果符合匹配标准，则停止比较。 当匹配标准不满足时，确定与虚拟简档库相关联的虚拟简档数据空间的子集。 使用与至少一个库相关联的简档数据空间确定子集。 选择虚拟简档数据空间的子集的虚拟简档信号。 基于虚拟简档信号来确定虚拟简档形状和/或虚拟简档参数。 在测量信号和虚拟轮廓信号之间计算差值。 将差异与虚拟简档库创建标准进行比较。 如果满足虚拟简档库创建标准，则使用与虚拟简档信号相关联的虚拟简档数据（包括虚拟简档形状和/或虚拟简档参数）来识别该结构。 或者，如果虚拟配置文件库创建条件不满足，则应用纠正措施。