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    Method and system for introducing process fluid through a chamber component
    2.
    发明申请
    Method and system for introducing process fluid through a chamber component 失效

    公开(公告)号：US20120098405A1

    公开(公告)日：2012-04-26

    申请号：US13343877

    申请日：2012-01-05

    Applicant: Lee CHEN ,  Merritt FUNK

    Inventor： Lee CHEN ,  Merritt FUNK

    IPC: H05H1/46

    CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

    Abstract: A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

    Method and system for low pressure plasma processing
    3.
    发明申请
    Method and system for low pressure plasma processing 审中-公开
    低压等离子体处理方法与系统

    公开(公告)号：US20090095714A1

    公开(公告)日：2009-04-16

    申请号：US11871865

    申请日：2007-10-12

    Applicant: Lee CHEN ,  Merritt FUNK

    Inventor： Lee CHEN ,  Merritt FUNK

    IPC: H01L21/306

    CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32357

    Abstract: Method and system for treating a substrate with plasma under low pressure conditions is described. A plasma processing system comprises a plasma generation chamber having a first plasma region and a process chamber having a second plasma region disposed downstream of the first plasma region. A plasma generation system is coupled to the plasma generation chamber and configured to create a first plasma in the first plasma region, while a plasma heating system is coupled to the process chamber and configured to heat electrons supplied to the second plasma region from the first plasma region to form a second plasma. A substrate holder coupled to the process chamber is configured to support a substrate and expose the substrate to the second plasma.

    Abstract translation: 描述了在低压条件下用等离子体处理衬底的方法和系统。 等离子体处理系统包括具有第一等离子体区域的等离子体生成室和设置在第一等离子体区域下游的具有第二等离子体区域的处理室。 等离子体产生系统耦合到等离子体产生室并且被配置为在第一等离子体区域中产生第一等离子体，而等离子体加热系统耦合到处理室并且被配置为加热从第一等离子体提供给第二等离子体区域的电子 区域以形成第二等离子体。 耦合到处理室的衬底保持器构造成支撑衬底并将衬底暴露于第二等离子体。

    Stable surface wave plasma source
    4.
    发明申请
    Stable surface wave plasma source 有权
    稳定的表面波等离子体源

    公开(公告)号：US20110057562A1

    公开(公告)日：2011-03-10

    申请号：US12555080

    申请日：2009-09-08

    Applicant: Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

    Inventor： Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

    IPC: H05H1/26 ,  H01P3/00

    CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

    Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

    Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽 配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

    Method for plasma processing over wide pressure range
    5.
    发明申请
    Method for plasma processing over wide pressure range 有权
    在宽压力范围内进行等离子体处理的方法

    公开(公告)号：US20090142929A1

    公开(公告)日：2009-06-04

    申请号：US11947038

    申请日：2007-11-29

    Applicant: Lee CHEN ,  Merritt FUNK

    Inventor： Lee CHEN ,  Merritt FUNK

    IPC: H01L21/302

    CPC classification number: H01L21/32136 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/31116 ,  H01L21/32137

    Abstract: A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the method comprises exposing the substrate to a high pressure plasma in the process chamber.

    Abstract translation: 描述了在宽压力范围内用等离子体处理衬底的方法。 该方法包括将基板暴露于处理室中的低压等离子体。 此外，该方法包括将衬底暴露于处理室中的高压等离子体。

    METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION
    7.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION 有权
    用于控制辐射分布的方法和系统

    公开(公告)号：US20100193471A1

    公开(公告)日：2010-08-05

    申请号：US12754662

    申请日：2010-04-06

    Applicant: Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

    Inventor： Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

    IPC: C23F1/00 ,  C23C16/52

    CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

    Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

    Processing system for producing a negative ion plasma
    8.
    发明申请
    Processing system for producing a negative ion plasma 审中-公开
    用于生产负离子等离子体的处理系统

    公开(公告)号：US20090084501A1

    公开(公告)日：2009-04-02

    申请号：US11862358

    申请日：2007-09-27

    Applicant: Lee CHEN ,  Merritt FUNK

    Inventor： Lee CHEN ,  Merritt FUNK

    IPC: H01L21/306

    CPC classification number: H01J37/32422 ,  H01J37/32357 ,  H01J37/3447

    Abstract: A processing system for producing a negative ion plasma is described, wherein a quiescent plasma having negatively-charged ions is produced. The processing system comprises a first chamber region for generating plasma using a first process gas, and a second chamber region separated from the first chamber region with a separation member. Electrons from plasma in the first region are transported to the second region to form quiescent plasma through collisions with a second process gas. A pressure control system coupled to the second chamber region is utilized to control the pressure in the second chamber region such that the electrons from the first chamber region undergo collision-quenching with the second process gas to form less energetic electrons that produce the quiescent plasma having negatively-charged ions.

    Abstract translation: 描述了一种用于制造负离子等离子体的处理系统，其中产生具有带负电荷的离子的静态等离子体。 处理系统包括用于使用第一处理气体产生等离子体的第一室区域和与第一室区域与分离构件分离的第二室区域。 来自第一区域中的等离子体的电子被传送到第二区域，以通过与第二工艺气体的碰撞而形成静止等离子体。 耦合到第二室区域的压力控制系统用于控制第二室区域中的压力，使得来自第一室区域的电子与第二处理气体进行碰撞骤冷以形成较少能量的电子，其产生静态等离子体， 带负电荷的离子。

    MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY
    9.
    发明申请
    MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY 审中-公开
    使用光学测量法测量在波形上形成的损伤结构

    公开(公告)号：US20080137078A1

    公开(公告)日：2008-06-12

    申请号：US12021172

    申请日：2008-01-28

    Applicant: Kevin LALLY ,  Merritt FUNK ,  Radha SUNDARARAJAN

    Inventor： Kevin LALLY ,  Merritt FUNK ,  Radha SUNDARARAJAN

    IPC: G06F15/18

    CPC classification number: G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

    Abstract translation: 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

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