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公开(公告)号：US11721660B2
公开(公告)日：2023-08-08
申请号：US17924649
申请日：2022-03-23
发明人： Daizo Oda , Motoki Eto , Takashi Yamada , Teruo Haibara , Ryo Oishi
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/85 , H01L2224/4512 , H01L2224/45105 , H01L2224/45109 , H01L2224/45123 , H01L2224/45147 , H01L2224/45541 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/859 , H01L2224/85035 , H01L2224/85203 , H01L2924/365
摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that:
in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
a thickness of the coating layer is 10 nm or more and 130 nm or less,
an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic %) to an Ni concentration CNi (atomic %), CPd/CNi, for all measurement points in the coating layer, and
the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer.-
公开(公告)号：US20230215834A1
公开(公告)日：2023-07-06
申请号：US17924649
申请日：2022-03-23
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/85 , H01L2924/365 , H01L2224/85203 , H01L2224/859 , H01L2224/45147 , H01L2224/45541 , H01L2224/45664 , H01L2224/45655 , H01L2224/45644 , H01L2224/85035 , H01L2224/4512 , H01L2224/45123 , H01L2224/45105 , H01L2224/45109
摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that:
in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
a thickness of the coating layer is 10 nm or more and 130 nm or less,
an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic %) to an Ni concentration CNi (atomic %), CPd/CNi, for all measurement points in the coating layer, and
the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer.-
公开(公告)号：US20230148306A1
公开(公告)日：2023-05-11
申请号：US17913365
申请日：2021-03-18
发明人： Motoki ETO , Daizo ODA , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L24/85 , H01L24/48 , H01L2224/4516 , H01L2224/4566 , H01L2224/45109 , H01L2224/45118 , H01L2224/45123 , H01L2224/45139 , H01L2224/45147 , H01L2224/45155 , H01L2224/45166 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45565 , H01L2224/45609 , H01L2224/45618 , H01L2224/45623 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45673 , H01L2224/45678 , H01L2224/48472 , H01L2224/85099 , H01L2924/365 , H01L2924/3512
摘要： There is provided a bonding wire for semiconductor devices that exhibits a favorable bondability even when being applied to wedge bonding at the room temperature, and also achieves an excellent bond reliability. The bonding wire includes a core material of Cu or Cu alloy (hereinafter referred to as a “Cu core material”), and a coating containing a noble metal formed on a surface of the Cu core material. A concentration of Cu at a surface of the wire is 30 to 80 at%.
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公开(公告)号：US20230146315A1
公开(公告)日：2023-05-11
申请号：US17911090
申请日：2020-03-13
发明人： Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/45005 , H01L2224/45124 , H01L2924/01021 , H01L2924/01039 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106
摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.
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公开(公告)号：US20230013769A1
公开(公告)日：2023-01-19
申请号：US17781316
申请日：2020-11-20
发明人： Ryo OISHI , Daizo ODA , Noritoshi ARAKI , Kota SHIMOMURA , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
摘要： There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm2) or more and 1.6 (μm/μm2) or less.
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公开(公告)号：US20200373226A1
公开(公告)日：2020-11-26
申请号：US16958633
申请日：2017-12-28
发明人： Daizo ODA , Takashi YAMADA , Motoki ETO , Taruo HAIBARA , Tomohiro UNO
摘要： Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases.The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.
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公开(公告)号：US10672733B2
公开(公告)日：2020-06-02
申请号：US16573936
申请日：2019-09-17
发明人： Takashi Yamada , Daizo Oda , Teruo Haibara , Tomohiro Uno
IPC分类号： H01L23/00
摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
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公开(公告)号：US20180374816A1
公开(公告)日：2018-12-27
申请号：US16067120
申请日：2016-09-23
发明人： Daizo ODA , Takumi OHKABE , Teruo HAIBARA , Takashi YAMADA , Tetsuya OYAMADA , Tomohiro UNO
摘要： The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.
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公开(公告)号：US20180374815A1
公开(公告)日：2018-12-27
申请号：US16062084
申请日：2016-06-24
发明人： Tetsuya OYAMADA , Tomohiro UNO , Daizo ODA , Takashi YAMADA
摘要： A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 μm in thickness, and the Cu surface layer is 0.0005 to 0.0070 μm in thickness.
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公开(公告)号：US20180130763A1
公开(公告)日：2018-05-10
申请号：US15577735
申请日：2016-06-14
发明人： Takashi YAMADA , Daizo ODA , Teruo HAIBARA , Ryo OISHI , Kazuyuki SAITO , Tomohiro UNO
摘要： A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6: Strength ratio=ultimate strength/0.2% offset yield strength. (1)
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