公开(公告)号：US20230035130A1

公开(公告)日：2023-02-02

申请号：US17392023

申请日：2021-08-02

Applicant: OmniVision Technologies, Inc.

Inventor： Gang CHEN ,  Qin WANG ,  Chao NIU

IPC: G02B3/00 ,  H04N5/357 ,  H04N5/369

Abstract: Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

公开(公告)号：US11563044B2

公开(公告)日：2023-01-24

申请号：US16905670

申请日：2020-06-18

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel-array substrate includes a semiconductor substrate and a passivation layer. The semiconductor substrate includes a pixel array surrounded by a periphery region. A back surface of the semiconductor substrate forms, in the periphery region, a plurality of first peripheral-trenches extending into the semiconductor substrate. The passivation layer is on the back surface and lines each of the plurality of first peripheral-trenches.

公开(公告)号：US11557620B2

公开(公告)日：2023-01-17

申请号：US17217937

申请日：2021-03-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Seong Yeol Mun ,  Yibo Zhu ,  Keiji Mabuchi

IPC: H01L27/146

Abstract: A high k passivation layer, an anti-reflective coating layer, and a buffer layer are disposed over semiconductor substrate including photodiodes formed therein. Trenches are etched into the semiconductor substrate through the buffer layer, anti-reflective coating layer, and the high k passivation layer in a grid-like pattern surrounding each of the photodiodes in the semiconductor substrate. Another high k passivation layer lines an interior of the trenches in the semiconductor substrate. An adhesive and barrier layer is deposited over the high k passivation layer that lines the interior of the trenches. A deep trench isolation (DTI) structure is formed with conductive material deposited into the trenches over the adhesive and barrier layer to fill the trenches. A grid structure is formed over the DTI structure and above a plane of the buffer layer. The grid structure is formed with the conductive material.

公开(公告)号：US20220399393A1

公开(公告)日：2022-12-15

申请号：US17343553

申请日：2021-06-09

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Heesoo Kang ,  Bill Phan ,  Seong Yeol Mun

IPC: H01L27/146

Abstract: SiGe photodiode for crosstalk reduction. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes. The plurality of pixels are configured to receive an incoming light through an illuminated surface of the semiconductor material. Each pixel includes a first photodiode comprising a silicon (Si) material; and a second photodiode having the Si material and a silicon germanium (SiGe) material.

公开(公告)号：US20220394201A1

公开(公告)日：2022-12-08

申请号：US17342383

申请日：2021-06-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chengcheng Xu ,  Rui Wang ,  Wei Deng ,  Chun-Sheng Yang ,  Xueqing Wang

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146 ,  H01L27/148

Abstract: An imaging device includes a plurality of photodiodes arranged in a photodiode array to generate charge in response to incident light. The plurality of photodiodes includes first and second photodiodes. A shared floating diffusion receives charge transferred from the first and second photodiodes. An analog to digital converter (ADC) performs a first ADC conversion to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next performs a second ADC conversion to generate a first half of a phase detection autofocus (PDAF) readout in response to charge transferred from the first photodiode to the shared floating diffusion. The ADC then performs a third ADC conversion to generate a full image readout in response to charge transferred from the second photodiode combined with the charge transferred previously from the first photodiode in the shared floating diffusion.

公开(公告)号：US11522005B1

公开(公告)日：2022-12-06

申请号：US17405605

申请日：2021-08-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang

IPC: H01L31/0224 ,  H01L27/146

Abstract: Methods of forming trench structures of different depths in a semiconductor substrate are provided. A first mask forming a first opening and a second opening is provided on the semiconductor substrate. The semiconductor substrate is etched through the first and second openings, thereby forming a first trench and a second trench. Trench structure material is deposited in the first and second trenches, thereby forming first and second trench structures. A second mask is provided on the first mask, wherein the second mask covers the first opening and has a third opening superimposed over the second opening of the first mask. The second trench structure is etched through the second opening of the first mask and through the third opening of the second mask.

公开(公告)号：US11520197B2

公开(公告)日：2022-12-06

申请号：US16875953

申请日：2020-05-15

Applicant: OmniVision Technologies, Inc.

Inventor： Chun-Sheng Fan ,  Wei-Feng Lin

IPC: G02F1/1362

Abstract: An active-pixel device assembly with stray-light reduction includes an active-pixel device including a semiconductor substrate and an array of active pixels, a light-transmissive substrate disposed on a light-receiving side of the active-pixel device, and a rough opaque coating disposed on a first surface of the light-transmissive substrate and forming an aperture aligned with the array of active pixels, wherein the rough opaque coating is rough so as to suppress reflection of light incident thereon from at least one side. A method for manufacturing a stray-light-reducing coating for an active-pixel device assembly includes depositing an opaque coating on a light-transmissive substrate such that the opaque coating forms a light-transmissive aperture, and roughening the opaque coating to form a rough opaque coating, said roughening including treating the opaque coating with an alkaline solution.

公开(公告)号：US20220352220A1

公开(公告)日：2022-11-03

申请号：US17243024

申请日：2021-04-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Yuanliang Liu ,  Keiji Mabuchi ,  Gang Chen ,  Bill Phan ,  Duli Mao ,  Takeshi Takeda

IPC: H01L27/146

Abstract: An image sensor comprises a first photodiode region and circuitry. The first photodiode region is disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate to form a first pixel. The first photodiode region includes a first segment coupled to a second segment. The circuitry includes at least a first electrode associated with a first transistor. The first electrode is disposed, at least in part, between the first segment and the second segment of the first photodiode region such that the circuity is at least partially surrounded by the first photodiode region when viewed from the first side of the semiconductor substrate.

公开(公告)号：US11469264B2

公开(公告)日：2022-10-11

申请号：US16777027

申请日：2020-01-30

Applicant: OmniVision Technologies, Inc.

Inventor： Alireza Bonakdar ,  Shinn-Jhy Lian ,  Badrinath Padmanabhan

IPC: H01L27/146

Abstract: A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element. The large pixels and small pixels form a first and second pixel array respectively, each having a pixel pitch Px and Py. The second pixel array is offset from the first pixel array by ½Px and ½Py. A first large pixel of the large pixels is between and collinear with a first and a second small pixel separated by √{square root over (Px2+Py2 )} in a first direction and each having a width W less than both pixel pitch Px and Py. The microlens is aligned with the first large pixel. The opaque element is between the first large pixel and the microlens and extends, in the first direction, less than ½(√{square root over (Px2+Py2)}−W) from the first small pixel toward the second small pixel. The opaque element has a width perpendicular to the first direction not exceeding width W.

公开(公告)号：US20220320175A1

公开(公告)日：2022-10-06

申请号：US17220695

申请日：2021-04-01

Applicant: OmniVision Technologies, Inc.

Inventor： Hui ZANG ,  Gang CHEN

IPC: H01L27/146 ,  H01L27/148 ,  H01L29/423

Abstract: An uneven-trench pixel cell includes a semiconductor substrate that includes a floating diffusion region, a photodiode region, and, between a front surface and a back surface: a first sidewall surface, a shallow bottom surface, a second sidewall surface, and a deep bottom surface. The first sidewall surface and a shallow bottom surface define a shallow trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A shallow depth of the shallow trench exceeds a junction depth of the floating diffusion region. The second sidewall surface and a deep bottom surface define a deep trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A distance between the deep bottom surface and the front surface defines a deep depth, of the deep trench, that exceeds the shallow depth.