公开(公告)号：US20220320376A1

公开(公告)日：2022-10-06

申请号：US17632903

申请日：2019-08-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ali MAHDAVI

IPC: H01L33/38 ,  H01L25/075

Abstract: An optoelectronic device includes at least one optoelectronic light source having an active region for generating light and a light emitting surface for emitting the generated light, an electrically conductive layer extending between the light emitting surface and the active region, and a photonic crystal structure. The photonic crystal structure is arranged in the electrically conductive layer. The at least one optoelectronic light source is a plurality of optoelectronic light sources. The optoelectronic light sources of the plurality of optoelectronic light sources are arranged in an array-like structure. Each of the optoelectronic light sources has an active region which is separate from the active regions of the other optoelectronic light sources. The electrically conductive structure extends over all optoelectronic light sources of the plurality of optoelectronic light sources.

公开(公告)号：US20220319882A1

公开(公告)日：2022-10-06

申请号：US17627554

申请日：2020-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias MEYER ,  Korbinian PERZLMAIER

IPC: H01L21/67 ,  B65G47/92

Abstract: A method of picking up and depositing optoelectronic semiconductor chips comprises generating electron-hole pairs in optoelectronic semiconductor chips, thereby generating a dipole electric field in the vicinity of the respective optoelectronic semiconductor chip, generating an electric field by a pick-up tool, and picking up the optoelectronic semiconductor chips during or after generation of the electron-hole pairs by the pick-up tool and depositing them at predetermined locations.

公开(公告)号：US20220315836A1

公开(公告)日：2022-10-06

申请号：US17837053

申请日：2022-06-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Seibald ,  Dominik Baumann ,  Tim Fiedler ,  Stefan Lange ,  Hubert Huppertz ,  Daniel Dutzler ,  Thorsten Schroeder ,  Daniel Bichler ,  Gudrun Plundrich ,  Simon Peschke ,  Gregor Hoerder ,  Gina Maya Achrainer ,  Klaus Wurst

IPC: C09K11/77 ,  H01L33/50 ,  C09K11/08

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v;
a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m 0.125 v.

公开(公告)号：US20220293815A1

公开(公告)日：2022-09-15

申请号：US17632523

申请日：2020-07-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Brendan HOLLAND

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/20

Abstract: A method for producing a radiation emitting semiconductor chip may include providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, applying a reflective layer sequence over the semiconductor layer sequence, generating a first recess through an opening of a mask where the first recess completely penetrates the reflective layer sequence and the active region, and applying a dielectric mirror layer in the first recess through the same opening of the same mask. Furthermore, a radiation emitting semiconductor chip is disclosed.

公开(公告)号：US20220293040A1

公开(公告)日：2022-09-15

申请号：US17636118

申请日：2020-08-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel RICHTER ,  Marcel SEVERIN

IPC: G09G3/32

Abstract: A control method includes A) determining intrinsic activation times of individual semiconductor emitters of a display device. The display device includes a plurality of light-emitting semiconductor emitters with different intrinsic activation times. The method also includes B) determining and storing in each case an activation delay and/or a turn-on current change for each individual one of the semiconductor emitters. The method further includes C) energizing the individual semiconductor emitters according to the previously determined activation delay and/or turn-on current change, so that in a display mode of the display device the semiconductor emitters have equally long starting times for a light emission.

公开(公告)号：US20220285592A1

公开(公告)日：2022-09-08

申请号：US17824836

申请日：2022-05-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas BIEBERSDORF ,  Michael BRANDL ,  Peter BRICK ,  Jean-Jacques DROLET ,  Hubert HALBRITTER ,  Laura KREINER ,  Erwin LANG ,  Andreas LEBER ,  Marc PHILIPPENS ,  Thomas SCHWARZ ,  Julia STOLZ ,  Xue WANG ,  Karsten DIEKMANN ,  Karl ENGL ,  Siegfried HERRMANN ,  Stefan ILLEK ,  Ines PIETZONKA ,  Andreas RAUSCH ,  Simon SCHWALENBERG ,  Petrus SUNDGREN ,  Georg BOGNER ,  Christoph KLEMP ,  Christine RAFAEL ,  Felix FEIX ,  Eva-Maria RUMMEL ,  Nicole HEITZER ,  Marie ASSMANN ,  Christian BERGER ,  Ana KANEVCE

IPC: H01L33/52 ,  H01L33/50 ,  H01L33/60 ,  H01L33/04 ,  H01L25/075

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220271202A1

公开(公告)日：2022-08-25

申请号：US17633051

申请日：2020-09-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring

IPC: H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/50 ,  H01L33/00

Abstract: In an embodiment an optoelectronic component includes a carrier with a mounting area, an optoelectronic semiconductor chip, a dielectric protective layer and a dielectric encapsulation, wherein the protective layer is directly located at the mounting area in a chip mounting region, wherein the semiconductor chip is located at the protective layer in the chip mounting region and is electrically conductively connected with the carrier, wherein the encapsulation is directly located at the mounting area in a region adjacent to the chip mounting region and is directly located at the protective layer in an overlap region, and wherein the encapsulation is arranged exclusively in the region adjacent to the semiconductor chip.

公开(公告)号：US11424226B2

公开(公告)日：2022-08-23

申请号：US16969156

申请日：2018-03-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Seong Tak Koay ,  Adelene Geok Ling Ng ,  Chui Wai Chong ,  Teng Hai Chuah

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/48

Abstract: The invention relates to a light emitting device comprising: a support, at least two light-emitting elements at a top side of the support, first connection locations and a single second connection location at a bottom side of the support, wherein each light-emitting element comprises a first contact location and a second contact location at a side facing away from the support, each first contact location is connected to one of the first connection locations via a first connection, all of the second contact locations are connected to the second connection location via a second connection, the first connections run along an outer surface of the support, and the second connection runs through the support.

公开(公告)号：US11413834B2

公开(公告)日：2022-08-16

申请号：US16318879

申请日：2017-07-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Marco Wittmann ,  Markus Boss

IPC: B29D11/00

Abstract: A method of producing optical components includes providing an initial carrier including cutouts; carrying out a molding process to form transparent optical molded parts arranged in the cutouts of the initial carrier, wherein a molding compound is introduced into the cutouts of the initial carrier and the molding compound is molded and cured; and singulating the initial carrier including the optical molded parts so that separate optical components are formed that respectively include a carrier produced from the initial carrier and including a cutout, and an optical molded part arranged in the cutout.

公开(公告)号：US20220254760A1

公开(公告)日：2022-08-11

申请号：US17623795

申请日：2020-07-09

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY ,  OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Darshan KUNDALIYA ,  Xinhao LI ,  Maria ANC ,  Nicholas FANG

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01L27/15

Abstract: Methods, systems, and materials for producing micro-pixelated LEDs capable of achieving a full-color spectrum through stereolithography techniques are provided. The techniques include depositing a photocurable nanophosphor ink composition onto a substrate, projecting a pattern onto the substrate and ink composition, and then curing at least a portion of the ink composition based on the projected pattern. The ink composition includes at least one photocurable polymer, a plurality of nanophosphors (e.g., QDs), and at least one light-scattering additive. The resulting cured ink composition and substrate component can be a pixelated LED that is configured to fully convert blue light-emitting pixels to red and green light-emitting pixels. Printing systems for performing these methods and producing these LEDs are also disclosed, as are various, non-limiting examples of ink composition formulations.