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    Crystallization pattern and method for crystallizing amorphous silicon using the same
    65.
    发明授权
    Crystallization pattern and method for crystallizing amorphous silicon using the same 有权
    结晶图案和使用其结晶非晶硅的方法

    公开(公告)号：US07678621B2

    公开(公告)日：2010-03-16

    申请号：US11725123

    申请日：2007-03-16

    申请人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

    发明人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

    摘要： Disclosed are a crystallization pattern, and a method for crystallizing amorphous silicon. The method includes the steps of forming an amorphous silicon film on a glass substrate, forming a crystallization pattern by patterning the amorphous silicon film, and crystallizing the crystallization pattern into polycrystalline silicon by irradiating a laser onto the crystallization pattern. The crystallization pattern includes a peripheral region located within a first distance from an edge of the crystallization pattern, and an internal region located away from the edge of the crystallization pattern by more than the first distance. The internal region is divided into at least one sub-region, each sub-region includes one crystallization inducement pattern, and an edge of each sub-region is located within a second distance from the crystallization inducement pattern.

    摘要翻译： 公开了结晶图案和非晶硅结晶的方法。 该方法包括以下步骤：在玻璃基板上形成非晶硅膜，通过图案化非晶硅膜形成结晶图案，并通过将激光照射到结晶​​图案上将结晶图案结晶成多晶硅。 结晶图案包括位于距离结晶图案的边缘第一距离内的周边区域以及远离结晶图案的边缘超过第一距离的内部区域。 内部区域被划分为至少一个子区域，每个子区域包括一个结晶诱导图案，并且每个子区域的边缘位于离结晶诱导图案的第二距离内。

    Apparatus for atomic layer deposition and method of atomic layer deposition using the same
    66.
    发明申请
    Apparatus for atomic layer deposition and method of atomic layer deposition using the same 审中-公开
    用于原子层沉积的装置和使用其的原子层沉积的方法

    公开(公告)号：US20090291211A1

    公开(公告)日：2009-11-26

    申请号：US12292595

    申请日：2008-11-21

    申请人： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： C23C16/54 ,  B05B3/18 ,  B05B1/18

    CPC分类号： C23C16/45565 ,  C23C16/45551 ,  C23C16/45574

    摘要： Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

    摘要翻译： 示例性实施例提供原子层沉积设备和使用原子层沉积设备沉积原子层的方法。 原子层沉积装置可以包括反应室，安装在反应室中以支撑基板的基板支撑件和设置在基板支撑件上方并具有至少一个同时喷射第一源气体的喷嘴组的喷淋头， 第二源气体和吹扫气体到基板上。 沉积原子层的方法可以包括沿第一方向移动衬底和淋浴头中的至少一个，并且通过注入第一源气体同时在衬底上沉积至少一个第一原子层和至少一个第二原子层， 第二源气体和通过淋浴喷头的净化气体进行移动操作。

    Oxide semiconductor transistor and method of manufacturing the same
    67.
    发明申请
    Oxide semiconductor transistor and method of manufacturing the same 有权
    氧化物半导体晶体管及其制造方法

    公开(公告)号：US20090206332A1

    公开(公告)日：2009-08-20

    申请号：US12320701

    申请日：2009-02-02

    申请人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

    发明人： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

    摘要： An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

    摘要翻译： 氧化物半导体薄膜晶体管（TFT）及其制造方法。 氧化物半导体TFT包括布置在氧化物半导体沟道层和第一栅极之间的第一栅极绝缘层和布置在沟道层和第二栅极之间的第二栅极绝缘层。 第一和第二栅极绝缘层由不同的材料制成并且具有不同的厚度。 优选地，第二栅极绝缘层是氧化硅并且比优选为氮化硅的第一栅极绝缘层更薄。 氧化物半导体是指氧化锌，氧化锡，Ga-In-Zn氧化物，In-Zn氧化物，In-Sn氧化物，氧化锌，氧化锡，Ga-In-Zn氧化物，In- 氧化锌和氧化铟锡。

    Manufacture Method of NDFEB Isotropic and Anisotropic Permanent Magnets
    69.
    发明申请
    Manufacture Method of NDFEB Isotropic and Anisotropic Permanent Magnets 审中-公开
    NDFEB各向同性和各向异性永磁体的制造方法

    公开(公告)号：US20090060773A1

    公开(公告)日：2009-03-05

    申请号：US11718312

    申请日：2005-10-28

    申请人： Hyoung Tae Kim ,  Yoon Bae Kim ,  Jang Seok Son ,  Ju Won Jeon

    发明人： Hyoung Tae Kim ,  Yoon Bae Kim ,  Jang Seok Son ,  Ju Won Jeon

    IPC分类号： B22F3/14

    CPC分类号： H01F41/0266 ,  B22F3/14 ,  B22F2999/00 ,  C22C1/0441 ,  H01F1/0576 ,  B22F3/105

    摘要： A fabrication method of isotropic and anisotropic NdFeB type permanent magnets is disclosed. In the a fabrication method of isotropic and anisotropic NdFeB type permanent magnets, the isotropic and anisotropic NdFeB type permanent magnets can be easily manufactured by means of Joule's heat using a self resistance of a powder molded body by directly applying a DC (Direct Current) to the upper and lower punches and the powder molded body, without using external heating elements or high frequency coils and so on, during press molding of the permanent magnet powder using the punches, and it is simple in terms of structure during the fabrication thereof, so that the manufacturing cost is low.

    摘要翻译： 公开了各向同性和各向异性NdFeB型永磁体的制造方法。 在各向同性和各向异性NdFeB型永磁体的制造方法中，通过直接将DC（直流）直接施加到粉末成型体的自身电阻，可以通过焦耳热量容易地制造各向同性和各向异性的NdFeB型永磁体 上下冲头和粉末成型体，在使用冲头的永久磁铁粉末进行加压成型时，不使用外部加热元件或高频线圈等，并且在制造过程中结构简单，因此 制造成本低。

    Dish washing machine
    70.
    发明申请
    Dish washing machine 有权
    洗碗机

    公开(公告)号：US20080134728A1

    公开(公告)日：2008-06-12

    申请号：US11976068

    申请日：2007-10-19

    申请人： Wang Seok Son

    发明人： Wang Seok Son

    IPC分类号： D06F37/00

    CPC分类号： A47L15/4257 ,  A47L15/4293

    摘要： A dish washing machine, which is capable of preventing wet vapor from flowing to a control panel provided to a door when the air in the door which opens and closes a washing tub is changed into the wet vapor due to a change in temperature during operation. The dish washing machine includes a main body having a washing tub, a door hinged with the main body, and opening and closing the washing tub, a control panel provided to the door, and a partition provided between the door and the control panel so as to block wet vapor in the door from flowing to the control panel.

    摘要翻译： 一种洗碗机，当打开和关闭洗涤桶的门中的空气由于操作期间的温度变化而变成湿蒸气时，能够防止湿气流向设置在门上的控制面板。 洗碗机包括具有洗涤桶的主体，与主体铰接的门，以及打开和关闭洗涤桶，设置在门上的控制面板和设置在门和控制面板之间的隔板，以便 以阻挡门中的湿蒸汽流向控制面板。