PATTERNING PROCESS
    61.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号:US20120270159A1

    公开(公告)日:2012-10-25

    申请号:US13450867

    申请日:2012-04-19

    CPC classification number: G03F7/0395 G03F7/0397 G03F7/203 G03F7/2041 G03F7/325

    Abstract: A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    Abstract translation: 通过将抗蚀剂组合物涂布在基材上,烘烤,暴露于高能量辐射,烘烤(PEB)和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域,形成负型图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度,并且即使当酸不稳定基团为 通过暴露和PEB去保护。

    Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same
    62.
    发明授权
    Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same 有权
    磺酸盐及其衍生物,光敏酸产生剂,以及使用其的抗蚀剂组合物和图案化方法

    公开(公告)号:US08283104B2

    公开(公告)日:2012-10-09

    申请号:US12706450

    申请日:2010-02-16

    Abstract: There is disclosed a sulfonate shown by the following general formula (2). R1—COOC(CF3)2—CH2SO3−M+  (2) (In the formula, R1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom. M+ represents a cation.) There can be provided: a novel sulfonate which is effective for a chemically amplified resist composition having a sufficiently high solubility (compatibility) in a resist solvent and a resin, a good storage stability, a PED stability, a further wider depth of focus, a good sensitivity, in particular a high resolution and a good pattern profile form; a photosensitive acid generator; a resist composition using this; a photomask blank, and a patterning process.

    Abstract translation: 公开了由以下通式(2)表示的磺酸盐。 R1-COOC(CF3)2-CH2SO3-M +(2)(式中,R1表示任选含有杂原子的碳原子数1〜50的直链状,支链状或环状的一价烃基,M +表示阳离子。 )可以提供:对抗蚀剂溶剂和树脂具有足够高的溶解度(相容性)的化学放大型抗蚀剂组合物有效的新型磺酸盐,良好的储存稳定性,PED稳定性,进一步更宽的聚焦深度, 良好的灵敏度,特别是高分辨率和良好的图案轮廓形式; 光敏酸发生器; 使用该抗蚀剂组合物 光掩模坯料和图案化工艺。

    Positive resist compositions and patterning process
    66.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US08017302B2

    公开(公告)日:2011-09-13

    申请号:US12355418

    申请日:2009-01-16

    Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.

    Abstract translation: 正型抗蚀剂组合物包含(A)在酸的作用下变得可溶于碱性显影剂的树脂组分和(B)酸产生剂。 树脂(A)是包含由式(1)表示的特定重复单元的聚合物。 酸产生剂(B)是特定的锍盐化合物。 当通过光刻处理时,组合物的分辨率提高并且形成具有最小LER的图案。 本文中R1是H或甲基,R2是酸不稳定基团,当X是CH2时,R3是CO2R4,当X是O时,R3是H,CO2R4,R4是一价C1-C20烃基,m是1或2。

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