Abstract:
A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.
Abstract:
There is disclosed a sulfonate shown by the following general formula (2). R1—COOC(CF3)2—CH2SO3−M+ (2) (In the formula, R1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom. M+ represents a cation.) There can be provided: a novel sulfonate which is effective for a chemically amplified resist composition having a sufficiently high solubility (compatibility) in a resist solvent and a resin, a good storage stability, a PED stability, a further wider depth of focus, a good sensitivity, in particular a high resolution and a good pattern profile form; a photosensitive acid generator; a resist composition using this; a photomask blank, and a patterning process.
Abstract:
A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.
Abstract:
A polymer having a rate of dissolution in an alkaline developer that increases under the action of acid is provided. The polymer is prepared by reacting a hydrogenated ROMP polymer with an O-alkylating agent in the presence of a base.
Abstract:
Carboxyl-containing lactone compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic ring, W is CH2, O or S, k1 is an integer of 0 to 4, and k2 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.
Abstract:
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.
Abstract:
Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.
Abstract:
A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
Abstract:
Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R1 is H or a monovalent C1-C20 hydrocarbon group in which any —CH2— moiety may be replaced by —O— or —C(═O)—, R2 is H or a monovalent C1-C6 hydrocarbon group, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, and M1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.
Abstract:
An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R2 is H or monovalent hydrocarbon, R3 and R4 are H or monovalent hydrocarbon, or R3 and R4, taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.
Abstract translation:螺环结构的酸不稳定酯单体具有式(1)其中Z是具有可聚合双键的一价基团,X是形成环戊烷,环己烷或降冰片烷环的二价基团,R 2是H或一价烃,R 3和 R 4为H或一价烃,或者R 3和R 4一起代表形成环戊烷或环己烷环的二价基团,n为1或2.由酸不稳定酯单体获得的聚合物具有如此高的反应性 酸催化的消除反应,聚合物可用于配制具有高分辨率的抗蚀剂组合物。