Abstract:
A control device for a rollable blind includes a fixing seat having a fixing post that defines an axis, and a limiting wall that has an annular first fixing surface. The fixing post has an annular second fixing surface that is spaced apart from the first fixing surface. A cord driven seat includes a sleeve tube that is in sleeving engagement with the fixing post. The sleeve tube has annular first and second rotary surfaces that surround the axis. The first and second rotary surfaces contact intimately and slidably the first and second fixing surfaces. A control cord is operable to drive rotation of the cord driven seat relative to the fixing seat. A blind mounting seat is coupled to the cord driven seat and the rollable blind.
Abstract:
A device includes a filling valve, a sleeve, an absorbing member, and a gas control unit. The filling valve can be engaged for filling liquid gas. The sleeve includes a fluid passing section that enables liquid gas outside to flow therein. The absorbing member can absorb liquid gas and is disposed in the sleeve. The gas control unit includes a main body, a gas inlet and flow rate adjusting mechanism, and a gas outlet mechanism. The gas inlet and flow rate adjusting mechanism includes an adjustably movable valve and a first air seal. The first air seal is mounted between the adjustably movable valve and the main body to prevent liquid gas from passing therebetween. The adjustably movable valve is in fluid communication with the gas outlet mechanism such that vaporized gas emitted from the absorbing member is discharged from the device from the gas outlet mechanism.
Abstract:
A termination structure is provided for a semiconductor device. The termination structure includes a semiconductor substrate having an active region and a termination region. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A MOS gate is formed on a sidewall of the termination trench adjacent the boundary. At least one guard ring trench is formed in the termination region on a side of the termination trench remote from the active region. A termination structure oxide layer is formed on the termination trench and the guard ring trench. A first conductive layer is formed on a backside surface of the semiconductor substrate. A second conductive layer is formed atop the active region and the termination region.
Abstract:
Methods for treating abnormal glycosylated hemoglobin (HbA1c) levels in a patient in need thereof, wherein the provided methods comprise administering to a patient in need a therapeutically effective amount of an Interleukin-1β modulator. Also, the invention provides compositions comprising at least one lipid modifying agent and an IL-1β modulator.
Abstract:
The configurations of an electro-optic Bragg deflector and the methods of using it as a laser Q-switch in a Q-switched laser and in a Q-switched wavelength-conversion laser are provided. As a first embodiment, the electro-optic Bragg deflector comprises an electrode-coated electro-optic material with one of a 1D and a 2D spatially modulated electro-optic coefficient. When a voltage is supplied to the electrodes, the electro-optic material behaves like a Bragg grating due to the electro-optically induced spatial modulation of the refractive index. The second embodiment relates to an actively Q-switched laser, wherein the electro-optic Bragg deflector functions as a laser Q-switch. The third embodiment of the present invention combines the Q-switched laser and a laser-wavelength converter to form a Q-switched wavelength-conversion laser, wherein the EO Bragg deflector can be monolithically integrated with a quasi-phase-matching wavelength converter in a fabrication process.
Abstract:
A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate and a metal layer is disposed over the second layer. The second layer is lightly doped so that a Schottky contact is formed between the metal layer and the second layer. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.
Abstract:
A voice/video communication system is disclosed. The system includes a caller having a first PSTN subsystem and a first data subsystem, and a callee, wherein the first data subsystem encodes the caller's public IP address/port into a first key sequence and triggers the first PSTN system to send first audio coding representing the first key sequence to the callee.
Abstract:
A photoelectric lens module is utilized to focus a light source. A fabrication method comprises steps of providing a first substrate; positioning a plurality of gap units on the first substrate, and forming a plurality of gap regions amongst the gap units on the first substrate; providing a second substrate comprising a plurality of photoelectric lens units, in which the positions of the photoelectric lens units are corresponding to the locations of the gap regions; and filling a transparent rubber in the gap regions in such that the first substrate and the second substrate are adhered closely.
Abstract:
This invention relates to protein-polymer conjugates described in the specification. Also disclosed are a method for preparing a protein-polymer conjugate and using such a conjugate in treating various immune disorders.
Abstract:
A single-pass optical parametric amplifier is provided. The single-pass optical parametric amplifier comprises a light source emitting a fundamental wave having a wavelength range; a nonlinear material, which the fundamental wave passes therethrough to form a second harmonic generation wave having a light path; a supercontinuum generator extending the wavelength range of the fundamental wave to form a supercontinuum generation seed; and an optical parametric wavelength transformer transforming the supercontinuum generation seed and the second harmonic generation wave into a signal wave and an idler wave.