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    EDGE RING ASSEMBLY WITH DIELECTRIC SPACER RING
    62.
    发明申请
    EDGE RING ASSEMBLY WITH DIELECTRIC SPACER RING 有权
    边缘环组件与电介质间隔环

    公开(公告)号：US20090186487A1

    公开(公告)日：2009-07-23

    申请号：US12415114

    申请日：2009-03-31

    申请人： Jeremy Chang ,  Andreas Fischer ,  Babak Kadkhodayan

    发明人： Jeremy Chang ,  Andreas Fischer ,  Babak Kadkhodayan

    IPC分类号： H01L21/302 ,  H01L21/306 ,  C23F1/00 ,  B23P6/00

    CPC分类号： H01L21/467 ,  H01J37/32623 ,  Y10T29/4973

    摘要： An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.

    摘要翻译： 边缘环组件围绕等离子体蚀刻室中的衬底支撑表面。 边缘环组件包括边缘环和介电隔离环。 围绕基板支撑表面并且沿着径向方向被边缘环包围的介电间隔环构造成使边缘环与基板绝缘。 边缘环组件围绕衬底支撑表面的结合可以降低聚合物在衬底的下侧和沿着衬底边缘的聚集，并增加衬底的等离子体蚀刻均匀性。

    Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
    63.
    发明申请
    Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses 有权
    用于半导体材料处理装置的具有低颗粒性能的喷头电极和喷头电极组件

    公开(公告)号：US20080242085A1

    公开(公告)日：2008-10-02

    申请号：US11730298

    申请日：2007-03-30

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： H01L21/44 ,  C23C16/44 ,  H01L21/302

    CPC分类号： C23C16/45565 ,  C23C16/4557 ,  C23C16/45574

    摘要： Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.

    摘要翻译： 公开了一种用于半导体材料处理装置的喷头电极。 喷头电极的实施例包括彼此结合的顶部和底部电极。 顶部电极包括一个或多个增压室。 底部电极包括等离子体暴露的底部表面和与气室流体连通的多个气体孔。 还公开了包括从顶板柔性地悬挂的喷头电极的喷头电极组件。 淋浴头电极组件可与温度控制元件流体连通，空间上与喷头电极分离，以控制喷头电极的温度。 还公开了在包括喷头电极组件的等离子体处理室中处理衬底的方法。

    METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE
    64.
    发明申请
    METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE 有权
    用于诱导直流电压在电极上的方法和装置

    公开(公告)号：US20080237187A1

    公开(公告)日：2008-10-02

    申请号：US12047813

    申请日：2008-03-13

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Eric Hudson ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Eric Hudson ,  Andreas Fischer

    IPC分类号： H01L21/3065 ,  H05H1/24 ,  H01L21/30

    CPC分类号： H01J37/32183 ,  H01J37/32091

    摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.

    摘要翻译： 公开了一种处理衬底的方法。 该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。 该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。

    Segmented radio frequency electrode apparatus and method for uniformity control
    65.
    发明申请
    Segmented radio frequency electrode apparatus and method for uniformity control 审中-公开
    分段射频电极装置及均匀性控制方法

    公开(公告)号：US20070235412A1

    公开(公告)日：2007-10-11

    申请号：US11806640

    申请日：2007-06-01

    申请人： Andreas Fischer

    发明人： Andreas Fischer

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32082 ,  H01J37/32532

    摘要： A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode. At least one dual frequency radio frequency power source outputs RF power at a first frequency and a second frequency. The first frequency and the second frequency are different such that at least one radio frequency switch routes at least the first frequency or the second frequency from the at least one dual frequency source to the first electrode, the second electrode, or the first electrode and the second electrode.

    摘要翻译： 用于等离子体处理的分段射频（RF）电源电极。 电极包括第一电极，围绕第一电极的第二电极和插在第一电极和第二电极之间的电介质材料。 电介质材料将第一电极与第二电极电隔离。 至少一个双频射频功率源以第一频率和第二频率输出RF功率。 第一频率和第二频率是不同的，使得至少一个射频开关至少将第一频率或第二频率从至少一个双频源引导到第一电极，第二电极或第一电极，以及 第二电极。

    Methods and apparatus for selective pre-coating of a plasma processing chamber
    66.
    发明申请
    Methods and apparatus for selective pre-coating of a plasma processing chamber 有权
    用于等离子体处理室的选择性预涂覆的方法和装置

    公开(公告)号：US20070204797A1

    公开(公告)日：2007-09-06

    申请号：US11367290

    申请日：2006-03-03

    申请人： Andreas Fischer

    发明人： Andreas Fischer

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32642 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32623

    摘要： An apparatus for selectively pre-coating a plasma processing chamber, including a chamber wall is disclosed. The apparatus includes a first set of RF electrodes, the first set of RF electrodes configured to strike a first pre-coat plasma, the first set of RF electrodes defining a first plasma chamber zone. The apparatus also includes a first set of confinement rings disposed around the first set of RF electrodes; and a second set of confinement rings disposed between the first set of confinement rings and the chamber wall. The apparatus further includes a gas delivery system configured to apply a first pre-coat layer to the first plasma zone when a first pre-coat gas is delivered and the first set of RF electrodes is energized. The apparatus also includes the gas delivery system configured to apply a second pre-coat layer to the second plasma zone when a second pre-coat gas is delivered and the second set of RF electrodes is energized.

    摘要翻译： 公开了一种用于选择性地预涂覆包括室壁的等离子体处理室的装置。 该装置包括第一组RF电极，第一组RF电极被配置为撞击第一预涂层等离子体，第一组RF电极限定第一等离子体室区。 该装置还包括设置在第一组RF电极周围的第一组约束环; 以及设置在所述第一组限制环和所述室壁之间的第二组限制环。 该装置还包括气体输送系统，该气体输送系统构造成当第一预涂层气体被输送并且第一组RF电极通电时，将第一预涂层施加到第一等离子体区。 该装置还包括气体输送系统，其构造成当第二预涂层气体被输送并且第二组RF电极通电时，将第二预涂层施加到第二等离子体区。

    Integrated capacitive and inductive power sources for a plasma etching chamber
    67.
    发明申请
    Integrated capacitive and inductive power sources for a plasma etching chamber 有权
    用于等离子体蚀刻室的集成电容和感应电源

    公开(公告)号：US20070199658A1

    公开(公告)日：2007-08-30

    申请号：US11363703

    申请日：2006-02-27

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    IPC分类号： B08B6/00 ,  C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

    摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

    摘要翻译： 概括地说，本发明通过提供改进的室清洁机构来满足这些需要。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

    Valve for a slurry outlet opening of a chemical mechanical polishing device and chemical mechanical polishing device having a valve
    69.
    发明授权
    Valve for a slurry outlet opening of a chemical mechanical polishing device and chemical mechanical polishing device having a valve 有权
    用于化学机械抛光装置的浆料出口开口的阀和具有阀的化学机械抛光装置

    公开(公告)号：US06854484B2

    公开(公告)日：2005-02-15

    申请号：US10210014

    申请日：2002-07-31

    申请人： Stefan Geyer ,  Andreas Fischer

    发明人： Stefan Geyer ,  Andreas Fischer

    IPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/304 ,  F16K15/14

    CPC分类号： B24B37/04 ,  B24B57/02 ,  Y10T137/788 ,  Y10T137/7885

    摘要： A valve for a slurry outlet opening in an installation for chemical mechanical polishing, in particular of semiconductor wafers in DRAM production, includes an elastic diaphragm, which covers the slurry outlet opening and has at least one self-closing opening. It is possible for the opening to be moved into a feedthrough position for the slurry by flowing slurry and to be automatically moved into a blocking position for the slurry when the slurry is not flowing. A CMP installation having such a valve is also provided. This creates a simple way of preventing particle agglomerations in the region of the fluid outlet opening of a CMP installation.

    摘要翻译： 用于化学机械抛光的装置中的浆料出口开口的阀，特别是DRAM生产中的半导体晶片的阀包括一个弹性隔膜，其覆盖浆料出口开口并且具有至少一个自闭合开口。 通过流动浆料将开口移动到浆料的馈通位置，并且当浆料不流动时自动移动到浆料的阻挡位置。 还提供了具有这种阀的CMP装置。 这创建了一种在CMP装置的流体出口的区域中防止颗粒聚集的简单方法。

    Plasma processor with electrode simultaneously responsive to plural frequencies
    70.
    发明授权
    Plasma processor with electrode simultaneously responsive to plural frequencies 有权
    等离子体处理器，电极同时响应多个频率

    公开(公告)号：US06841943B2

    公开(公告)日：2005-01-11

    申请号：US10180978

    申请日：2002-06-27

    申请人： Vahid Vahedi ,  Peter Loewenhardt ,  Albert Ellingboe ,  Andras Kuthi ,  Andreas Fischer

    发明人： Vahid Vahedi ,  Peter Loewenhardt ,  Albert Ellingboe ,  Andras Kuthi ,  Andreas Fischer

    IPC分类号： H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065 ,  H01J7/24

    CPC分类号： H01J37/32082 ,  H01J37/32165

    摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

    摘要翻译： 处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。 直流接地延伸部基本上与第一电极对准。 在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比被耦合到包括第一电极和延伸的路径，而不是第二频率的路径 电极。 施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。