公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US20080259298A1

公开(公告)日：2008-10-23

申请号：US11785745

申请日：2007-04-19

申请人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Johannes Hubertus Josephina Moors

发明人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Johannes Hubertus Josephina Moors

IPC分类号： G03B27/42

CPC分类号： G03F7/70291 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70191

摘要： A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system.

摘要翻译： 用于无掩模EUV应用的光刻设备包括被构造和布置成调节辐射束并且将经调节的辐射束提供给空间光调制器的照明系统，被构造和布置成保持衬底的衬底台，以及构造和布置的投影系统 以将调节的辐射束投影到基板的目标部分上。 照明系统包括构造和布置成限定经调节的辐射束的场的场面反射镜。 场面反射镜被构造和布置成光学匹配辐射源和照明系统。

公开(公告)号：US07279690B2

公开(公告)日：2007-10-09

申请号：US11094490

申请日：2005-03-31

申请人： Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Givi Georgievitch Zukavishvili ,  Bastiaan Theodoor Wolschrijn ,  Marc Hubertus Lorenz Van Der Velden

发明人： Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Givi Georgievitch Zukavishvili ,  Bastiaan Theodoor Wolschrijn ,  Marc Hubertus Lorenz Van Der Velden

IPC分类号： H05H3/00

CPC分类号： G03F7/70933 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

摘要： A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.

摘要翻译： 光刻设备被布置成将来自辐射源的光束投影到基底上。 该装置包括在光束的路径中的光学元件，用于将气体引入光束的路径中的气体入口，使得气体将被光束离子化以产生朝向光学元件的电场，并且气体源耦合 到用于供应气体的气体入口。 气体具有用于溅射光学元件的动能阈值，其大于由电场中的气体的离子产生的动能。

公开(公告)号：US07167232B2

公开(公告)日：2007-01-23

申请号：US10747613

申请日：2003-12-30

申请人： Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Lucas Henricus Johannes Stevens

发明人： Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Lucas Henricus Johannes Stevens

IPC分类号： G03B27/42

CPC分类号： G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source that produces EUV radiation, an illumination system that provides a beam of the EUV radiation produced by the radiation source, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The radiation source includes a debris-mitigation system that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles for interacting with the debris particles.

摘要翻译： 公开了一种光刻设备。 光刻设备包括产生EUV辐射的辐射源，提供由辐射源产生的EUV辐射束的照明系统和支持图案形成结构的支撑结构。 图案形成结构被配置为在其横截面中赋予辐射束图案。 该装置还包括支撑基板的基板支撑件和将图案化的光束投影到基板的目标部分上的投影系统。 辐射源包括减轻在生成EUV辐射期间形成的碎片颗粒的碎片减轻系统。 碎片减轻系统被配置为提供用于与碎屑颗粒相互作用的附加颗粒。

公开(公告)号：US07612353B2

公开(公告)日：2009-11-03

申请号：US11481252

申请日：2006-07-06

申请人： Leonid Aizikovitch Sjmaenok ,  Vadim Yevgenyevich Banine ,  Josephus Jacobus Smits ,  Lambertus Adrianus Van Den Wildenberg ,  Alexander Alexandrovitch Schmidt ,  Arnoud Cornelis Wassink ,  Eric Louis Willem Verpalen ,  Antonius Johannes Van De Pas ,  Paul Peter Anna Antonius Brom

发明人： Leonid Aizikovitch Sjmaenok ,  Vadim Yevgenyevich Banine ,  Josephus Jacobus Smits ,  Lambertus Adrianus Van Den Wildenberg ,  Alexander Alexandrovitch Schmidt ,  Arnoud Cornelis Wassink ,  Eric Louis Willem Verpalen ,  Antonius Johannes Van De Pas ,  Paul Peter Anna Antonius Brom

IPC分类号： A61N5/06 ,  G01J3/10 ,  H05G2/00

CPC分类号： B82Y10/00 ,  G03F7/70166 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus includes a radiation system including a radiation source for the production of a radiation beam, and a contaminant trap arranged in a path of the radiation beam. The contaminant trap includes a plurality of foils or plates defining channels that are arranged substantially parallel to the direction of propagation of said radiation beam. The foils or plates can be oriented substantially radially with respect to an optical axis of the radiation beam. The contaminant trap can be provided with a gas injector which is configured to inject gas at least at two different positions directly into at least one of the channels of the contaminant trap.

摘要翻译： 光刻设备包括包括用于产生辐射束的辐射源的辐射系统和布置在辐射束的路径中的污染物阱。 污染物捕集器包括限定通道的多个箔或板，其基本上平行于所述辐射束的传播方向布置。 箔或板可以相对于辐射束的光轴基本上径向定向。 污染物阱可以设置有气体注射器，其被配置为至少在两个不同位置将气体喷射到污染物阱的至少一个通道中。

公开(公告)号：US20110292366A1

公开(公告)日：2011-12-01

申请号：US13201242

申请日：2010-01-11

申请人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

发明人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

IPC分类号： G03B27/54 ,  G02B5/08

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/085 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70941 ,  G03F7/70958

摘要： A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

摘要翻译： 用于反射波长在2-8nm范围内的辐射的多层反射镜具有交替层。 交替层包括第一层和第二层。 第一层和第二层选自：U和B4C层，Th和B4C层，La和B9C层，La和B4C层，U和B9C层，Th和B9C层，La和B层，U和 B层，C层和B层，Th和B层，U化合物和B4C层，Th化合物和B4C层，La化合物和B9C层，La化合物和B4C层，U化合物和B9C层，Th化合物和B9C层 ，La化合物和B层，U化合物和B层，以及Th化合物和B层。 中间层设置在第一层和第二层中的至少一个之间。

公开(公告)号：US07397056B2

公开(公告)日：2008-07-08

申请号：US11175036

申请日：2005-07-06

申请人： Leonid Aizikovitch Sjmaenok ,  Vadim Yevgenyevich Banine ,  Josephus Jacobus Smits ,  Lambertus Adrianus Van De Wildenberg ,  Alexander Alexandrovitch Schmidt ,  Arnoud Cornelis Wassink ,  Eric Louis Willem Verpalen ,  Antonius Johannes Van De Pas

发明人： Leonid Aizikovitch Sjmaenok ,  Vadim Yevgenyevich Banine ,  Josephus Jacobus Smits ,  Lambertus Adrianus Van De Wildenberg ,  Alexander Alexandrovitch Schmidt ,  Arnoud Cornelis Wassink ,  Eric Louis Willem Verpalen ,  Antonius Johannes Van De Pas

IPC分类号： H01J65/04

CPC分类号： B82Y10/00 ,  G03F7/70166 ,  G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus includes a radiation system including a radiation source for the production of a radiation beam, and a contaminant trap arranged in a path of the radiation beam. The contaminant trap includes a plurality of foils or plates defining channels which are arranged substantially parallel to the direction of propagation of said radiation beam. The foils or plates are oriented substantially radially with respect to an optical axis of the radiation beam. The contaminant trap is provided with a gas injector which is configured to inject gas at least at two different positions directly into at least one of the channels of the contaminant trap.

摘要翻译： 光刻设备包括包括用于产生辐射束的辐射源的辐射系统和布置在辐射束的路径中的污染物阱。 污染物捕集器包括限定通道的多个箔或板，其基本上平行于所述辐射束的传播方向布置。 箔或板相对于辐射束的光轴基本上径向定向。 污染物陷阱设置有气体注射器，其被配置为至少在两个不同位置将气体喷射到污染物阱的至少一个通道中。

公开(公告)号：US09082521B2

公开(公告)日：2015-07-14

申请号：US13201242

申请日：2010-01-11

申请人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

发明人： Denis Alexandrovich Glushkov ,  Vadim Yevgenyevich Banine ,  Leonid Aizikovitch Sjmaenok ,  Nikolay Nikolaevitch Salashchenko ,  Nikolay Ivanovich Chkhalo

IPC分类号： G02B5/08 ,  G21K1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/20

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/085 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70941 ,  G03F7/70958

摘要： A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

摘要翻译： 用于反射波长在2-8nm范围内的辐射的多层反射镜具有交替层。 交替层包括第一层和第二层。 第一层和第二层选自：U和B4C层，Th和B4C层，La和B9C层，La和B4C层，U和B9C层，Th和B9C层，La和B层，U和 B层，C层和B层，Th和B层，U化合物和B4C层，Th化合物和B4C层，La化合物和B9C层，La化合物和B4C层，U化合物和B9C层，Th化合物和B9C层 ，La化合物和B层，U化合物和B层，以及Th化合物和B层。 中间层设置在第一层和第二层中的至少一个之间。

公开(公告)号：US20120327381A1

公开(公告)日：2012-12-27

申请号：US13582261

申请日：2011-01-31

申请人： Dzmitry Labetski ,  Vadim Yevgenyevich Banine ,  Erik Roelof Loopstra ,  Andrei Mikhailovich Yakunin

发明人： Dzmitry Labetski ,  Vadim Yevgenyevich Banine ,  Erik Roelof Loopstra ,  Andrei Mikhailovich Yakunin

IPC分类号： G03B27/52

CPC分类号： H05G2/008 ,  G02B5/00 ,  G02B19/00 ,  G02B19/0023 ,  G02B19/0028 ,  G02B19/0047 ,  G02B19/0095 ,  G03F7/70908 ,  G03F7/70916 ,  G03F7/70933 ,  H05G2/003

摘要： A radiation source for generating extreme ultraviolet radiation for a lithographic apparatus has a debris mitigation device comprising a nozzle arranged at or near an intermediate focus (IF) of the beam of radiation. The nozzle serves to direct a flow of gas (330) towards the radiation source or collector optic in order to deflect particulate debris (43) emitted by the radiation source.

摘要翻译： 用于产生用于光刻设备的极紫外辐射的辐射源具有碎片减轻装置，其包括布置在辐射束的中间焦点（IF）处或其附近的喷嘴。 喷嘴用于引导气体（330）流向辐射源或收集器光学元件，以便偏转由辐射源发射的颗粒物（43）。

公开(公告)号：US20110170083A1

公开(公告)日：2011-07-14

申请号：US12904626

申请日：2010-10-14

申请人： Luigi Scaccabarozzi ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevich Ivanov ,  Andrei Mikhailovich Yakunin

发明人： Luigi Scaccabarozzi ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevich Ivanov ,  Andrei Mikhailovich Yakunin

IPC分类号： G03B27/72

CPC分类号： G03F1/84 ,  G03F7/7085 ,  G03F7/70908 ,  G03F7/70916

摘要： A system and method are used to detect thermal radiation from a mask. Debris particles on the mask heat up, but do not cool down as quickly as the surrounding mask. Due to the temperature difference, the wavelength of radiation emitted by particles and the mask differs. Thus by detecting the thermal radiation, it is possible to detect the presence of particles deposited on the mask. If particles are detected, the mask can be cleaned.

摘要翻译： 使用系统和方法来检测来自掩模的热辐射。 面具上的碎屑颗粒加热，但不要像周围的面具一样冷却下来。 由于温度差异，颗粒和掩模发射的辐射波长不同。 因此，通过检测热辐射，可以检测沉积在掩模上的颗粒的存在。 如果检测到颗粒，则可以清洁面罩。