公开(公告)号：US06381258B1

公开(公告)日：2002-04-30

申请号：US09481940

申请日：2000-01-13

申请人： Kiyoshi Takei ,  Nong Chen ,  Yoshiaki Watanabe ,  Kiyofumi Chikuma

发明人： Kiyoshi Takei ,  Nong Chen ,  Yoshiaki Watanabe ,  Kiyofumi Chikuma

IPC分类号： H01S308

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/22 ,  H01S5/34373

摘要： A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.

公开(公告)号：US06342590B1

公开(公告)日：2002-01-29

申请号：US07869111

申请日：1992-04-14

申请人： Shigeo Morimoto ,  Takashi Adachi ,  Tohru Matsunaga ,  Masato Kashimura ,  Yoshiaki Watanabe ,  Kaoru Sota

发明人： Shigeo Morimoto ,  Takashi Adachi ,  Tohru Matsunaga ,  Masato Kashimura ,  Yoshiaki Watanabe ,  Kaoru Sota

IPC分类号： C07H100

CPC分类号： C07H17/08

摘要： Erythromycin A derivatives represented by the general formula wherein R1 is a 2-alkenyl group having 3 to 15 carbon atoms, an arylmethyl group, or an arylmethyl group substituted by 1 to 3 of a halogen atom, an alkoxy group 1 to 4 carbon atoms, a nitro group or an alkoxycarbonyl group having 2 to 6 carbon atoms, R2 is a substituted silyl group and R3 is a hydrogen atom or R2, are disclosed. These compounds are useful as intermediates of the anti-bacterial agents.

摘要翻译： 由通式化合物R1表示的红霉素A衍生物是具有3〜15个碳原子的2-烯基，芳基甲基或被1〜3个卤素原子取代的芳甲基，1〜4个碳原子的烷氧基， 硝基或碳原子数为2〜6的烷氧基羰基，R2为取代甲硅烷基，R3为氢原子或R2。 这些化合物可用作抗细菌剂的中间体。

公开(公告)号：US06292503B1

公开(公告)日：2001-09-18

申请号：US09270827

申请日：1999-03-18

申请人： Yoshiaki Watanabe ,  Kiyoshi Takei ,  Nong Chen ,  Kiyofumi Chikuma

发明人： Yoshiaki Watanabe ,  Kiyoshi Takei ,  Nong Chen ,  Kiyofumi Chikuma

IPC分类号： H01S500

CPC分类号： H01S5/22 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/209

摘要： There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.

摘要翻译： 提供了一种制造脊型LC-DFB半导体激光器的方法，其中具有由用于形成在由半导体制成的有源层上的用于脊条的材料制成的包层的激光基板。 在包覆层上形成条纹掩模，通过选择性湿蚀刻从包覆层形成两个横向平坦部分，从而形成从其突出的脊条，并且具有条形掩模封盖的平坦的顶部。 在两个侧面平坦部分，脊条和条纹掩模的侧壁上形成光栅掩模。 栅格掩模在脊条延伸的方向上具有周期性结构。 通过光栅掩模对棱条的两个横向平坦部分和侧壁进行干蚀刻，然后将脊条的两个侧向平坦部分和侧壁湿法蚀刻以形成用于脊的材料的光栅 在两个横向平坦部分上的条纹，脊状条的边壁和有源层，以便限定与脊条相邻的托架光栅部分。

公开(公告)号：US5109260A

公开(公告)日：1992-04-28

申请号：US564815

申请日：1990-08-08

申请人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

发明人： Sakae Tanaka ,  Yoshiaki Watanabe ,  Katsuo Shirai ,  Yoshihisa Ogiwara

IPC分类号： H01L21/336 ,  H01L29/417 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78624

摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

摘要翻译： 硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管，每个硅薄膜晶体管包括绝缘基板，形成在绝缘基板上的栅电极，形成在绝缘基板上的栅绝缘层， 栅电极，一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层，形成在一对第一杂质上的本征硅层含有硅层和在 一对第一杂质之间的栅极绝缘层包含硅层，以便连接一对第一杂质含硅层，形成在本征硅层上的保护绝缘层，以及形成在源极电极和漏电极 该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。

公开(公告)号：US5065202A

公开(公告)日：1991-11-12

申请号：US534003

申请日：1990-06-04

申请人： Sakae Tanaka ,  Yoshiaki Watanabe

发明人： Sakae Tanaka ,  Yoshiaki Watanabe

IPC分类号： H01L23/52 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78669 ,  H01L27/1214

摘要： An amorphous silicon thin film transistor array substrate is formed on an insulating substrate with a gate insulating layer, as gate wiring itnerconnecting gate electrodes and source wiring interconnecting source electrodes. The gate insulating layer is provided in a lower layer of a terminal part of the source wiring. In the process for forming the array, the gate insulating layer is formed in a portion of the structure other than the terminal part of the gate, and the terminal part of the source wiring is formed on the gate insulating layer.

摘要翻译： 在具有栅极绝缘层的绝缘基板上形成非晶硅薄膜晶体管阵列基板，作为栅极布线与栅极电极和源极布线互连源极电极连接。 栅极绝缘层设置在源极配线的端子部的下层。 在形成阵列的工艺中，栅极绝缘层形成在除了栅极的端子部分之外的结构的一部分中，源极配线的端子部分形成在栅极绝缘层上。

公开(公告)号：US4977412A

公开(公告)日：1990-12-11

申请号：US286841

申请日：1988-12-20

申请人： Shin Komori ,  Jun Azuma ,  Yoshiaki Watanabe

发明人： Shin Komori ,  Jun Azuma ,  Yoshiaki Watanabe

IPC分类号： G02B7/00 ,  B41J2/44 ,  G02B26/10 ,  G03G15/04 ,  G06K15/12 ,  H04N1/036

CPC分类号： H04N1/036 ,  G06K15/1204

摘要： An optical scanning device comprises a beam source unit having a laser source, and a housing on which the beam source is mounted. The housing accommodates optical components through which a laser beam from the beam source unit is applied to the surface of an object thereby to optically scan the object surface. The housing includes a base plate carrying the optical components and a side wall provided with a beam source mounting portion which enables the beam source mounting portion which enables the beam source unit to be mounted and demounted on and from the side wall by a vertical movement of the beam source unit. Alternatively, the side wall of the housing is provided with a locating portion which provides a locating surface parallel to the optical axis of the laser beam.

公开(公告)号：US4948899A

公开(公告)日：1990-08-14

申请号：US397850

申请日：1989-08-24

申请人： Toshihisa Ogawa ,  Tomomi Ota ,  Shuichi Sato ,  Takemi Sunaga ,  Yoshiaki Watanabe ,  Katsuo Hatayama

发明人： Toshihisa Ogawa ,  Tomomi Ota ,  Shuichi Sato ,  Takemi Sunaga ,  Yoshiaki Watanabe ,  Katsuo Hatayama

IPC分类号： C07D211/90 ,  A61K31/445 ,  A61K31/451 ,  A61P9/12

CPC分类号： C07D211/90

摘要： A 1,4-dihydropyridine derivative represented by the formula ##STR1## wherein R.sup.1 is a hydrogen atom, an alkoxy group having 1 to 4 carbon atoms, a mercapto group, an alkylcarbonylthio group in which the alkyl group has 1 to 4 carbon atoms or a benzoylthio group, R.sup.2 is a mercapto group, an alkylcarbonylthio group in which the alkyl group has 1 to 4 carbon atoms, a benzoylthio group or a 2-cyanoethylthio group, A and B are the same or different and are each an alkylene group having 1 to 4 carbon atoms, and X is a hydrogen atom, a halogen atom, a nitro group or a trifluoromethyl group is disclosed. These compounds increase the therapeutic effect of drug-resistant cancers.

公开(公告)号：US4937332A

公开(公告)日：1990-06-26

申请号：US286171

申请日：1988-12-19

申请人： Chihiro Yokoo ,  Akira Onodera ,  Hiroshi Fukushima ,  Yoshiaki Watanabe ,  Kaoru Sota

发明人： Chihiro Yokoo ,  Akira Onodera ,  Hiroshi Fukushima ,  Yoshiaki Watanabe ,  Kaoru Sota

IPC分类号： A61K31/545 ,  C07D501/36 ,  C07D501/59

CPC分类号： C07D501/59 ,  Y02P20/55

摘要： A cephalosporin derivative represented by the general formula ##STR1## wherein R.sup.1 is a hydrogen atom or a protecting group of the amino group, R.sup.2 is a hydrogen atom or a protecting group of the hydroxyl group, R.sup.3 is a hydrogen atom or a protecting group of the carboxyl group, and R.sup.4 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and the non-toxic salts thereof are useful as antibacterial agents.

公开(公告)号：US4699981A

公开(公告)日：1987-10-13

申请号：US893783

申请日：1986-08-06

申请人： Yoshiaki Watanabe ,  Chihiro Yokoo ,  Masami Goi ,  Akira Onodera ,  Mitsuo Murata ,  Hiroshi Fukushima ,  Kaoru Sota

发明人： Yoshiaki Watanabe ,  Chihiro Yokoo ,  Masami Goi ,  Akira Onodera ,  Mitsuo Murata ,  Hiroshi Fukushima ,  Kaoru Sota

IPC分类号： A61K31/545 ,  C07D501/36 ,  C07D501/59

CPC分类号： C07D501/59

摘要： Cephalosporin derivatives represented by the general formula ##STR1## Wherein X represents a hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, an allyl group, a cycloalkyl group having 5 or 6 carbon atoms or a benzyl group, and the non-toxic salts thereof are disclosed. These compounds are useful as antibacterial agents.

摘要翻译： 其中X表示氢原子，具有1至4个碳原子的低级烷基，烯丙基，具有5或6个碳原子的环烷基或苄基的通式为其的头孢菌素衍生物 ，并公开了其无毒盐。 这些化合物可用作抗菌剂。

公开(公告)号：US4670549A

公开(公告)日：1987-06-02

申请号：US832322

申请日：1986-02-24

申请人： Shigeo Morimoto ,  Takashi Adachi ,  Toshifumi Asaka ,  Masato Kashimura ,  Yoshiaki Watanabe ,  Kaoru Sota

发明人： Shigeo Morimoto ,  Takashi Adachi ,  Toshifumi Asaka ,  Masato Kashimura ,  Yoshiaki Watanabe ,  Kaoru Sota

IPC分类号： C07H17/08

CPC分类号： C07H17/08

摘要： A method for the selective methylation of the hydroxy group at the 6-position of erythromycin A derivatives which comprises reacting a compound represented by the formula R-X (wherein R is a 2-alkenyl group, a benzyl group or a substituted benzyl group, and X is a halogen atom), reacting the resulting quaternary salt compound with a methylating agent, and then eliminating R groups of the resulting compound to give 6-O-methylerythromycin A 9-oxime, is disclosed.

摘要翻译： 一种在红霉素A衍生物的6-位选择性甲基化羟基的方法，其包括使由式RX表示的化合物（其中R为2-链烯基，苄基或取代的苄基）和X 是卤素原子），使所得季盐化合物与甲基化剂反应，然后除去所得化合物的R基团，得到6-O-甲基红霉素A9-肟。