中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

212 records (took 0.051 seconds)

    Method and device for printing image
    62.
    发明授权
    Method and device for printing image 失效
    打印图像的方法和设备

    公开(公告)号：US08632152B2

    公开(公告)日：2014-01-21

    申请号：US12920267

    申请日：2009-02-27

    Applicant: Jinghua Shen ,  Yapeng Chen ,  Bin Yang ,  Lidong Wang

    Inventor： Jinghua Shen ,  Yapeng Chen ,  Bin Yang ,  Lidong Wang

    IPC: B41J29/38 ,  B41J29/393 ,  B41J2/15

    CPC classification number: G06K15/02 ,  H04N1/40068

    Abstract: Disclosed is a method for printing an image, comprising a step of rasterizing an image to be printed in view of a first resolution to generate a first data bitmap; a step of splitting the first data bitmap according to a ratio of the first resolution to a second resolution to generate second data bitmaps; and a step of outputting the second data bitmaps to a printer with the second resolution for printing. Disclosed is also a device for printing images. The method and device for printing an image may solve the problem in the prior art that the definition of an image printed from a printer is too low and improve the definition of an image printed from a printer.

    Abstract translation: 公开了一种打印图像的方法，包括：根据第一分辨率光栅化要打印的图像以生成第一数据位图的步骤; 根据第一分辨率与第二分辨率的比率分割第一数据位图以产生第二数据位图的步骤; 以及将第二数据位图输出到具有用于打印的第二分辨率的打印机的步骤。 公开了一种用于打印图像的装置。 用于打印图像的方法和设备可以解决现有技术中从打印机打印的图像的定义太低并且提高从打印机打印的图像的定义的问题。

    Amplification Modulation Screening Method And Apparatus
    63.
    发明申请
    Amplification Modulation Screening Method And Apparatus 有权
    放大调制筛选方法及装置

    公开(公告)号：US20140002864A1

    公开(公告)日：2014-01-02

    申请号：US13996907

    申请日：2011-12-23

    Applicant: Haifeng Li ,  Bin Yang

    Inventor： Haifeng Li ,  Bin Yang

    IPC: H04N1/405

    CPC classification number: H04N1/4058 ,  G06T11/40 ,  G09G3/2011 ,  G09G2300/0426 ,  G09G2300/0443 ,  G09G2300/0452 ,  H04N1/4055

    Abstract: An amplitude modulation screening method is provided. The method comprises a step of utilizing regular hexagon screen dots to form a threshold matrix for amplitude screening. In embodiments of the present application, an amplitude modulation screening apparatus is also provided. The apparatus may comprise a matrix module configured to constitute a threshold matrix for amplitude screening using regular hexagon screen dots. Due to the threshold matrix formed with regular hexagon screen dots, the method and apparatus of the present application resolve the problem of the screen dots in the prior art, and improve the printing quality.

    Abstract translation: 提供了一种幅度调制屏蔽方法。 该方法包括利用正六边形屏幕点形成用于振幅筛选的阈值矩阵的步骤。 在本申请的实施例中，还提供了幅度调制筛选装置。 该装置可以包括矩阵模块，该矩阵模块被配置为使用正六边形屏幕点构成用于振幅筛选的阈值矩阵。 由于由正六边形屏幕点形成的阈值矩阵，本申请的方法和装置解决了现有技术中屏幕点的问题，并提高了打印质量。

    Match-rule based service message transfer method and system
    65.
    发明申请
    Match-rule based service message transfer method and system 有权

    公开(公告)号：US20130007824A1

    公开(公告)日：2013-01-03

    申请号：US13581628

    申请日：2011-06-24

    Applicant: Jianhua Kong ,  Bin Yang ,  Liming Zhou

    Inventor： Jianhua Kong ,  Bin Yang ,  Liming Zhou

    IPC: H04N21/20

    CPC classification number: H04N21/25891 ,  H04L65/4076 ,  H04N21/25

    Abstract: The disclosure provides a match-rule based service message transfer method and system in the IPTV, to address the problems in the IPTV message system of message storing and backlog, low push efficiency and poor usability. In the disclosure, match fields are arranged in a set-top box and a service message to be sent, the service message is sent by means of broadcast or multicast, the set-top box performs matching for the match fields based on the match rule, and filters the message. The disclosure avoids sending a service message by means of unicast, increases the push efficiency and can greatly reduce the storage load of offline messages in a message system. The formed message may be sent according to a single or combined policy which depends on a specific service attribute, thereby greatly facilitating the service operation.

    Methods of forming silicides of different thicknesses on different structures
    66.
    发明授权
    Methods of forming silicides of different thicknesses on different structures 有权
    在不同结构上形成不同厚度的硅化物的方法

    公开(公告)号：US08236693B2

    公开(公告)日：2012-08-07

    申请号：US11748743

    申请日：2007-05-15

    Applicant: Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

    Inventor： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

    IPC: H01L21/44

    CPC classification number: H01L21/324 ,  H01L21/28052 ,  H01L29/66507 ,  H01L29/78

    Abstract: The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.

    Abstract translation: 形成器件的栅极和有源区，并且施加和去除氮化物和氧化物层的交替步骤允许在不同区域暴露硅，同时保持覆盖有氮化物的其它区域中的硅或多晶硅。 金属层沉积在暴露的硅或多晶硅上，退火在所选择的暴露区域中形成硅化物层。 氧化物层和/或氮化物层从被覆盖区域移除，另一个金属层被沉积​​。 在第二暴露区域上形成一层厚度的硅化物，并在先前的硅化物厚度上形成附加的硅化物厚度来重复退火工艺。

    Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide
    67.
    发明申请
    Method for Forming an SOI Schottky Source/Drain Device to Control Encroachment and Delamination of Silicide 有权
    用于形成SOI肖特基源/排水装置以控制硅化物的侵蚀和分层的方法

    公开(公告)号：US20110230017A1

    公开(公告)日：2011-09-22

    申请号：US12726736

    申请日：2010-03-18

    Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    IPC: H01L21/336

    CPC classification number: H01L29/7839 ,  H01L29/78654

    Abstract: A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

    Abstract translation: 提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。 栅极结构直接形成在第一半导体层上。 凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。 凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。 在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

    Method of fabricating a nitrogenated silicon oxide layer and MOS device having same
    69.
    发明授权
    Method of fabricating a nitrogenated silicon oxide layer and MOS device having same 有权
    制造氮化硅氧化物层的方法和具有其的MOS器件

    公开(公告)号：US07928020B2

    公开(公告)日：2011-04-19

    申请号：US11862865

    申请日：2007-09-27

    Applicant: Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

    Inventor： Jinping Liu ,  Ben Ong ,  Zhengquan Zhang ,  Jae Gon Lee ,  Lydia Wong ,  Bin Yang ,  K. H. Alex See ,  Meisheng Zhou ,  Liang Choo Hsia

    IPC: H01L21/00

    CPC classification number: H01L21/3143 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/31155 ,  H01L29/513 ,  H01L29/518

    Abstract: A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed.

    Abstract translation: 一种含氮介电层的制造方法和包括在基板上形成氧化硅层的电介质层的半导体器件，使得界面区域与基板相邻，表面区域与界面区域相对。 通过施加氮等离子体将氮引入到氧化硅层中。 在施加氮等离子体之后，将氧化硅层退火。 重复将氧气引入氧化硅层并退火氧化硅层的过程，以在氧化硅层中产生双峰氮浓度分布。 在氧化硅层中，峰值氮浓度远离界面区域，并且峰值氮浓度中的至少一个位于表面区域附近。 还公开了一种制造半导体器件的方法，其中还包括含氮氧化硅层。

Patent Agency Ranking