Method and apparatus for measuring formation resistivity in cased holes
    61.
    发明授权
    Method and apparatus for measuring formation resistivity in cased holes 失效
    用于测量套管孔中地层电阻率的方法和装置

    公开(公告)号:US5510712A

    公开(公告)日:1996-04-23

    申请号:US236932

    申请日:1994-05-02

    IPC分类号: G01V3/20

    CPC分类号: G01V3/20

    摘要: A method of determining the resistivity of an underground formation surrounding a cased borehole including the steps of: a) passing a current along a first pan of the casing and measuring the voltage; b) passing a current along a second part of the casing and measuring the voltage, the second part being spaced from the first part by an intermediate region; c) measuring voltages between the first part of the casing and a point in the intermediate region and between the second part of the casing and the same point; and d) using the measured voltages to derive the resistivity of the formation. A logging tool for use in determining the resistivity of an underground formation surrounding a cased borehole includes a body having first and second pans separated by an intermediate region, wherein: a) the first body part includes a first current source having spaced electrodes arranged so as to enable a current to be passed through a corresponding pan of the casing and a voltage monitor having spaced electrodes for measuring the voltage across the pan of the casing; b) the second body pan includes second current source having spaced electrodes arranged so as to enable a current to be passed through a corresponding pan of the casing and a second voltage monitor having spaced electrodes for measuring the voltage across the part of the casing; and c) the intermediate region includes intermediate voltage monitors including electrodes for measuring a voltage between the first pan of the casing and a point in a corresponding intermediate region of the casing, and between the second part of the casing and the point in the intermediate region of the casing so as to enable the formation resistivity to be derived from the measured voltages.

    摘要翻译: 一种确定围绕套管井眼的地下地层的电阻率的方法,包括以下步骤:a)沿着壳体的第一盘通过电流并测量电压; b)沿着壳体的第二部分通过电流并测量电压,第二部分与第一部分间隔一个中间区域; c)测量所述壳体的所述第一部分与所述中间区域中的点与所述壳体的所述第二部分和所述相同点之间的电压; 以及d)使用测量的电压来导出地层的电阻率。 用于确定围绕套管钻孔的地下地层的电阻率的测井工具包括具有由中间区域分开的第一和第二平底板的主体,其中:a)第一主体部分包括具有间隔开的电极的第一电流源, 以使电流能够通过壳体的相应盘,以及具有间隔开的电极的电压监视器,用于测量壳体的盘上的电压; b)第二主体盘包括具有间隔开的电极的第二电流源,其布置成使得电流能够通过壳体的相应盘,以及具有间隔开的电极的第二电压监视器,用于测量壳体的一部分上的电压; 以及c)所述中间区域包括中间电压监视器,其包括用于测量所述壳体的所述第一盘和所述壳体的相应中间区域中的点之间以及所述壳体的所述第二部分与所述中间区域中的点之间的电压的电极 使得能够从测量的电压导出地层电阻率。

    Borehole measurement of NMR characteristics of earth formations

    公开(公告)号:US5055788A

    公开(公告)日:1991-10-08

    申请号:US431256

    申请日:1989-12-05

    摘要: Borehole NMR logging apparatus and methods, and methods for the interpretation thereof. A logging tool is provided which produces a strong, static and homogeneous magnetic field B.sub.0 in a Volume of an adjacent formation on one side of the tool to measure nuclear magnetic resonance characteristics thereof. In the preferred embodiment, the tool has an RF antenna mounted on the outside of the metal body of the tool, directing focussed oscillating magnetic fields B.sub.1 at said Volume to polarize or tip the Magnetic moments of hydrogen nuclei of fluids within rock pores. The same antenna can be used to receive signals of proton precession in the Volume of interest immediately after transmission of the RF polarizing field B.sub.1. Extremely rapid damping of the antenna between the transmitting and receiving modes of operation is accomplished by a Q-switch disclosed herein. The invention provides for the direct measurement of NMR decay having transverse relaxation time T.sub.2 behavior, and further provides for the fast repetition of pulsed measurements from within a borehole. An additional magnet array may be mounted offset from the first magnet configuration to prepolarize a formation before it is measured in order to pre-align a larger number of protons than the single magnet configuration could do by itself. Additional features of the invention are disclosed which increase the Signal/Noise ratio of the measured data, and improve the quality and quantity of borehole NMR measurements, per unit of time spent. Disclosed interpretation methods determine fluid flow permeability and longitudinal relaxation time T.sub.1 -type parameters by directly comparing the measured decay signals (such as T.sub.2 or T.sub.2 * type decay) to a representation which responds to both the decay time t.sub.dec and the imposed polarization period prior to such decay, t.sub.poi. The parameters of amplitude and T.sub.1 are determined and combined with certain preferred methods to generate robust values of the formation characteristics such as fluid flow permeability. Other related methods are disclosed.

    Borehole measurement of NMR characteristics of earth formations

    公开(公告)号:US5055787A

    公开(公告)日:1991-10-08

    申请号:US431368

    申请日:1989-12-05

    摘要: Borehole NMR logging apparatus and methods, and methods for the interpretation thereof. A logging tool is provided which produces a strong, static and homogeneous magnetic field B.sub.0 in a Volume of an adjacent formation on one side of the tool to measure nuclear magnetic resonance characteristics thereof. In the preferred embodiment, the tool has an RF antenna mounted on the outside of the metal body of the tool, directing focussed oscillating magnetic fields B.sub.1 at said Volume to polarize or tip the magnetic moments of hydrogen nuclei of fluids within rock pores. The same antenna can be used to receive signals of proton precession in the Volume of interest immediately after transmission of the RF polarizing field B.sub.1. Extremely rapid damping of the antenna between the transmitting and receiving modes of operation is accomplished by a Q-switch disclosed herein. The invention provides for the direct measurement of NMR decay having transverse relaxation time T.sub.2 behavior, and further provides for the fast repetition of pulsed measurements from within a borehole. An additional magnet array may be mounted offset from the first magnet configuration to prepolarize a formation before it is measured in order to pre-align a larger number of protons than the single magnet configuration could do by itself. Additional features of the invention are disclosed which increase the Signal/Noise ratio of the measured data, and improve the quality and quantity of borehole NMR measurements, per unit of time spent. Disclosed interpretation methods determine fluid flow permeability and longitudinal relaxation time T.sub.1 -type parameters by directly comparing the measured decay signals (such as T.sub.2 or T.sub.2 * type decay) to a representation which responds to both the decay time t.sub.dec and the imposed polarization period prior to such decay t.sub.poi. The parameters of amplitude and T.sub.1 are determined and combined with certain preferred methods to generate robust values of formation characteristics such as fluid flow permeability. Other related methods are disclosed.

    Method for self-aligned doubled patterning lithography
    64.
    发明授权
    Method for self-aligned doubled patterning lithography 有权
    自对准双重图案平版印刷的方法

    公开(公告)号:US08679981B1

    公开(公告)日:2014-03-25

    申请号:US12943808

    申请日:2010-11-10

    IPC分类号: H01L21/302

    CPC分类号: H01L21/033 G03F1/00

    摘要: Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.

    摘要翻译: 本发明的各种实施例提供用于半导体器件制造和生成用于图案化线特征和大特征的目标布局的光掩模的系统和方法。 本发明的实施例涉及使用自对准双重图案来定义线特征和大特征的目标布局的系统和方法。

    Method of compensating photomask data for the effects of etch and lithography processes
    67.
    发明授权
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法,用于蚀刻和光刻工艺的影响

    公开(公告)号:US07600212B2

    公开(公告)日:2009-10-06

    申请号:US11541921

    申请日:2006-10-02

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译: 一种用于从给定目标布局合成光掩模数据集的方法,包括以下步骤:(a)为目标布局提供一组目标多边形; (b)将平滑曲线拟合到所述目标多边形集合的目标多边形,所述曲线具有一组蚀刻目标点; (c)根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及(d)基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

    METHOD OF ELIMINATING A LITHOGRAPHY OPERATION
    68.
    发明申请
    METHOD OF ELIMINATING A LITHOGRAPHY OPERATION 有权
    消除光刻操作的方法

    公开(公告)号:US20090146322A1

    公开(公告)日:2009-06-11

    申请号:US11952703

    申请日:2007-12-07

    摘要: Methods of semiconductor device fabrication are disclosed. An exemplary method includes processes of depositing a first pattern on a semiconductor substrate, wherein the first pattern defines wide and narrow spaces; depositing spacer material over the first pattern on the substrate; etching the spacer material such that the spacer material is removed from horizontal surfaces of the substrate and the first pattern but remains adjacent to vertical surfaces of a wide space defined by the first pattern and remains within narrow a space defined by the first pattern; and removing the first pattern from the substrate. In one embodiment, the first pattern can comprise sacrificial material, which can include, for example, polysilicon material. The deposition can comprise physical vapor deposition, chemical vapor deposition, electrochemical deposition, molecular beam epitaxy, atomic layer deposition or other deposition techniques. According to another embodiment, features for lines and logic device components having a width greater than that of the lines are formed in the spacer material in the same mask layer.

    摘要翻译: 公开了半导体器件制造方法。 示例性方法包括在半导体衬底上沉积第一图案的过程,其中第一图案限定宽而窄的空间; 在衬底上的第一图案上沉积间隔物材料; 蚀刻间隔物材料,使得间隔物材料从基底和第一图案的水平表面移除,但保持邻近由第一图案限定的宽空间的垂直表面,并保持在由第一图案限定的狭窄空间内; 并从衬底去除第一图案。 在一个实施例中,第一图案可以包括牺牲材料,其可以包括例如多晶硅材料。 沉积可以包括物理气相沉积,化学气相沉积,电化学沉积,分子束外延,原子层沉积或其它沉积技术。 根据另一个实施例,在相同掩模层中的间隔物材料中形成具有大于线的宽度的线和逻辑器件部件的特征。

    Apparatus and method for compensating a lithography projection tool
    69.
    发明授权
    Apparatus and method for compensating a lithography projection tool 有权
    用于补偿光刻投影工具的装置和方法

    公开(公告)号:US07519940B2

    公开(公告)日:2009-04-14

    申请号:US11203329

    申请日:2005-08-13

    IPC分类号: G06P17/50 G01M11/00

    CPC分类号: G03F1/36 G03F1/44

    摘要: An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.

    摘要翻译: 一种用于补偿投影光刻工具中的透镜缺陷的装置和方法,包括从投影光刻工具产生的衍射图像中提取透镜透射函数,然后使用提取的透镜透射函数作为光刻投影工具中的补偿器。 合成光掩模图案的另一优选装置和方法包括获得成像系统的透射率函数的相位和幅度; 形成包括成像系统的透射功能的图案化计算模型; 然后通过最小化计算模型预测在晶片上形成合成的掩模图案的另一图案之间的差异来合成来自给定目标图案的掩模图案。