公开(公告)号：US08451563B1

公开(公告)日：2013-05-28

申请号：US13331208

申请日：2011-12-20

申请人： Jinqiu Zhang ,  Feng Liu ,  Shaoping Li ,  Ming Sun

发明人： Jinqiu Zhang ,  Feng Liu ,  Shaoping Li ,  Ming Sun

IPC分类号： G11B5/17 ,  G11B5/127

CPC分类号： G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49044

摘要： A method fabricates a side shield for a magnetic transducer having a nonmagnetic layer and an ABS location corresponding to an ABS. The nonmagnetic layer has a pole trench therein. The pole trench has a shape and location corresponding to the pole. A wet etchable layer is deposited. Part of the wet etchable layer resides in the pole trench. A pole is formed. The pole has a bottom and a top wider than the bottom in the pole tip region. Part of the pole in the pole tip region is in the pole trench on at least part of the wet etchable layer. At least parts of the wet etchable layer and the nonmagnetic layer are removed, forming an air bridge. The air bridge is between part of the pole at the ABS location and an underlying layer. Side shield layer(s) that substantially fill the air bridge are deposited.

摘要翻译： 一种制造用于具有对应于ABS的非磁性层和ABS位置的磁换能器的侧屏蔽的方法。 非磁性层在其中具有极沟槽。 极沟具有对应于极的形状和位置。 沉积湿蚀刻层。 湿蚀刻层的一部分位于极沟槽中。 一个极点形成。 电极具有底部和顶部宽于电极尖端区域中的底部。 极尖区域中的极的一部分在至少部分湿蚀刻层的极沟中。 去除湿蚀刻层和非磁性层的至少一部分，形成空气桥。 空气桥在ABS位置的极点的一部分和下层之间。 基本上填充空气桥的侧面屏蔽层被沉积。

公开(公告)号：US08000128B2

公开(公告)日：2011-08-16

申请号：US12835791

申请日：2010-07-14

申请人： Shaoping Li ,  Insik Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

发明人： Shaoping Li ,  Insik Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/72 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666

摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

摘要翻译： 一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

公开(公告)号：US07846564B2

公开(公告)日：2010-12-07

申请号：US11235208

申请日：2005-09-27

申请人： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu ,  Xiaobin Wang

发明人： Shaoping Li ,  Kaizhong Gao ,  Lei Wang ,  Wenzhong Zhu ,  Xiaobin Wang

IPC分类号： G11B5/65

CPC分类号： G11B5/667 ,  B82Y10/00 ,  G11B5/64 ,  G11B5/65 ,  G11B5/656 ,  G11B5/66 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B2005/0029 ,  H01F41/0206 ,  Y10S428/90 ,  Y10T29/4902 ,  Y10T29/49032 ,  Y10T29/49067 ,  Y10T428/12458 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/26 ,  Y10T428/265

摘要： A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic anisotropy field Hk extending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.

摘要翻译： 适用于高记录密度和高数据记录速率的垂直磁记录介质包括具有至少一个具有在其上形成层叠层的表面的非磁性基板，该层堆叠包括垂直记录层，该垂直记录层包含多个柱状磁性颗粒 垂直于衬底表面延伸一段长度，第一端远离表面，接近表面的第二端，其中每个磁性颗粒具有：（1）垂直磁各向异性场Hk沿其长度延伸的梯度 第一端和第二端; 和（2）沿着长度的预定局部交换耦合强度。

公开(公告)号：US20100110758A1

公开(公告)日：2010-05-06

申请号：US12262262

申请日：2008-10-31

申请人： Shaoping Li ,  Inisk Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

发明人： Shaoping Li ,  Inisk Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC分类号： G11C11/00 ,  H01L47/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/72 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666

摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

公开(公告)号：US20090262636A1

公开(公告)日：2009-10-22

申请号：US12105627

申请日：2008-04-18

申请人： Jianhua Xue ,  Yuming Zhou ,  Shaoping Li ,  Johannes van Ek ,  Christopher Rea

发明人： Jianhua Xue ,  Yuming Zhou ,  Shaoping Li ,  Johannes van Ek ,  Christopher Rea

IPC分类号： G11B9/00

CPC分类号： G11B5/314 ,  G11B2005/001

摘要： A magnetic device includes a write element including a write element tip, and a conductive coil for carrying a write current to induce a first field in the write element. A first conductor proximate a trailing edge of the write pole tip is operable to carry a first assist current to generate a second field that augments the first field. A second conductor proximate a leading edge of the write pole tip is operable to carry a second assist current to generate a third field that augments the first field. First and second side shields are on opposing sides of the write element in a cross-track direction.

摘要翻译： 磁性装置包括写入元件，该写入元件包括写入元件尖端，以及用于承载写入电流以引起写入元件中的第一场的导电线圈。 靠近写极尖的后缘的第一导体可操作以承载第一辅助电流以产生增大第一场的第二场。 靠近写极尖的前沿的第二导体可操作以承载第二辅助电流以产生增大第一场的第三场。 第一和第二侧面屏蔽件在横向方向上位于写入元件的相对侧上。

公开(公告)号：US20090185315A1

公开(公告)日：2009-07-23

申请号：US12017822

申请日：2008-01-22

申请人： Song S. Xue ,  Zheng Gao ,  Shaoping Li ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Konstantin Nikolaev ,  Patrick J. Ryan

发明人： Song S. Xue ,  Zheng Gao ,  Shaoping Li ,  Kaizhong Gao ,  Dimitar V. Dimitrov ,  Konstantin Nikolaev ,  Patrick J. Ryan

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.

摘要翻译： 磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。 间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

公开(公告)号：US07474499B2

公开(公告)日：2009-01-06

申请号：US11190739

申请日：2005-07-27

申请人： Shaoping Li ,  Daniel John Brown ,  Michael R. Montemorra ,  Nurul Amin

发明人： Shaoping Li ,  Daniel John Brown ,  Michael R. Montemorra ,  Nurul Amin

IPC分类号： G11B5/012 ,  G11B17/00

CPC分类号： G11B25/043 ,  G11B5/102 ,  G11B33/1493

摘要： The present invention includes a data storage system. The data storage system includes an enclosure and at least one perpendicular recording device positioned within the enclosure and in communication with a recording medium. The recording medium includes a layer of magnetic material that has a permeability that is substantially similar to a permeability of a magnetic material in the recording device. The data storage system also includes a soft magnetic material included in the enclosure for shielding magnetic stray fields from the perpendicular recording device. The soft magnetic material has a permeability that is at least as great as approximately the permeability of the layer of magnetic material of the recording medium.

摘要翻译： 本发明包括数据存储系统。 数据存储系统包括外壳和位于外壳内并与记录介质通信的至少一个垂直记录装置。 记录介质包括具有与记录装置中的磁性材料的磁导率基本相似的磁导率的磁性材料层。 数据存储系统还包括用于屏蔽来自垂直记录装置的磁性杂散场的外壳中的软磁材料。 软磁性材料的磁导率至少与记录介质的磁性材料层的磁导率大致相同。

公开(公告)号：US07436632B2

公开(公告)日：2008-10-14

申请号：US10880879

申请日：2004-06-30

申请人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Patrick Ryan

发明人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Patrick Ryan

IPC分类号： G11B5/39

CPC分类号： G11B5/265 ,  G11B5/127 ,  G11B5/3954 ,  G11B5/3974

摘要： A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.

摘要翻译： 一种用于从磁性介质读取信息的磁传感器。 磁传感器包括底电极和设置在底电极上方的第一传感器。 磁传感器还包括设置在第一传感器上方的中间电极，设置在中间电极上方的第二传感器和设置在第二传感器上方的顶部电极。 底部电极，中间电极和顶部电极用于并联地电连接第一传感器和第二传感器。

公开(公告)号：US07427514B2

公开(公告)日：2008-09-23

申请号：US10646103

申请日：2003-08-22

申请人： Harry Liu ,  Lonny Berg ,  William L. Larson ,  Shaoping Li ,  Theodore Zhu ,  Joel Drewes

发明人： Harry Liu ,  Lonny Berg ,  William L. Larson ,  Shaoping Li ,  Theodore Zhu ,  Joel Drewes

IPC分类号： G11C11/00 ,  H01L41/22 ,  H01L45/00

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08 ,  H01L43/12

摘要： A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.

摘要翻译： 公开了钝化的磁阻钻头结构，其中受保护的氧化或腐蚀的表面。 在一个实施例中，位结构通过蚀刻停止阻挡材料被封装。 在另一个实施例中，蚀刻停止阻挡材料保护位结构的顶部并且电介质间隔件保护侧壁。

公开(公告)号：US07359161B2

公开(公告)日：2008-04-15

申请号：US10880705

申请日：2004-06-30

申请人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Michael R. Montemorra ,  Patrick Ryan

发明人： Shaoping Li ,  Song Xue ,  Kaizhong Gao ,  Michael R. Montemorra ,  Patrick Ryan

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G11B2005/0005

摘要： A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.

摘要翻译： 提供磁传感器。 磁传感器包括具有第一电阻区域和第二电阻区域的磁阻多层部分。 至少两个触点耦合到磁阻多层部分。 感测电流从至少两个触点的第一触点经由第一电阻区域和磁阻多层部分的第二电阻区域流过至少两个触点的第二触点。 所述第一阻抗区域促进所述感测电流在与所述磁阻多层部分的所述层的表面平行的第一方向上的主要流动，并且所述第二电阻区域基本上促进所述感测电流在第二方向上的初级流动 平行于磁阻多层部分的层的表面平面。