Abstract:
Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.
Abstract:
Provided is an optoelectronic element including a first substrate, a first electrode on the first substrate, a first lens pattern disposed on the first electrode and including a liquid crystal and a black dye molecule, a second lens pattern disposed on the first lens pattern, and a second electrode on the second lens pattern, wherein the black dye molecule includes about 1 to 4 azo groups and about 2 to 5 aromatic cyclic compounds.
Abstract:
Provided is an optical device manufacturing method including forming a reflection layer on a substrate, forming a dielectric layer on the reflection layer, and inserting a phase change material layer into the dielectric layer, wherein the inserting of the phase change material layer includes adjusting a position of the phase change material layer to be inserted into the dielectric layer according to a wavelength of incident light incident to the dielectric layer.
Abstract:
A display apparatus may include: a first base substrate; a driving circuit unit disposed on the first base substrate and including a plurality of gate lines, a plurality of data lines and a plurality of thin film transistors electrically connected to the plurality of gate lines and the plurality of data lines; a driving circuit controller including a gate driver disposed between the driving circuit unit and the first base substrate and outputting a gate signal to the gate lines, a data driver outputting a data voltage to the plurality of data lines and an interface circuit unit controlling operation timings of the gate driver and the data driver; and an image embodying unit disposed on the driving circuit unit and embodying an image in response to a signal received from the driving circuit unit.
Abstract:
Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.
Abstract:
A level shifter circuit a first transistor connected between a power source terminal of the level shifter circuit and an output terminal of the level shifter circuit, the first transistor being configured to transmit, in response to a first signal and a second signal, a power source voltage applied from the power source terminal to the output terminal, the first signal being received from an input terminal of the level shifter circuit through a first gate of the first transistor, the second signal being received through a second gate of the first transistor, and a second transistor connected between a ground terminal of the level shifter circuit and the output terminal, the second transistor being configured to transmit a ground voltage from the ground terminal to the output terminal in response to a gate signal received through a gate of the second transistor.
Abstract:
Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
Abstract:
Provided is a display device. The display device includes a backlight unit generating a plurality of flat lights and a spatial light modulator (SLM) unit generating an interference pattern by using the plurality of lights according to hologram data and displaying a hologram based on the generated interference pattern. The backlight unit is manufactured as an organic light emitting diode including a plurality of quantum dots.