公开(公告)号：US20240100482A1

公开(公告)日：2024-03-28

申请号：US18530997

申请日：2023-12-06

Applicant: FUJIFILM Corporation

Inventor： Tadashi OMATSU ,  Tetsuya KAMIMURA ,  Tetsuya Shimizu ,  Satomi TAKAHASHI

IPC: B01D61/18 ,  B01D61/20 ,  B01D71/26 ,  B01D71/56 ,  B01D71/64

CPC classification number: B01D61/18 ,  B01D61/20 ,  B01D71/261 ,  B01D71/262 ,  B01D71/56 ,  B01D71/641 ,  B01D69/02

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A is a porous membrane containing a polyimide-based resin.

公开(公告)号：US20240050898A1

公开(公告)日：2024-02-15

申请号：US18477662

申请日：2023-09-29

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi Takahashi ,  Tadashi Omatsu ,  Tetsuya Shimizu

IPC: B01D61/58 ,  B01D3/14 ,  B01D65/02 ,  B01D69/02 ,  B01D71/26 ,  B01D71/28 ,  B01D71/32 ,  B01D71/56 ,  B01D71/68 ,  H01L21/67

CPC classification number: B01D61/58 ,  B01D3/145 ,  B01D65/02 ,  B01D69/02 ,  B01D71/26 ,  B01D71/28 ,  B01D71/32 ,  B01D71/56 ,  B01D71/68 ,  H01L21/67017 ,  B01D2311/25 ,  B01D2311/2623 ,  B01D2311/2669 ,  B01D2317/02 ,  B01D2325/022 ,  B01D2325/42

Abstract: A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.

公开(公告)号：US20230350306A1

公开(公告)日：2023-11-02

申请号：US18218727

申请日：2023-07-06

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi Takahashi

IPC: G03F7/32 ,  C08F14/26 ,  B65D88/08 ,  C08F10/06 ,  B65D88/06 ,  G03F7/16

CPC classification number: G03F7/325 ,  C08F14/26 ,  B65D88/08 ,  C08F10/06 ,  B65D88/06 ,  G03F7/16 ,  H01L21/0274

Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

公开(公告)号：US20220315868A1

公开(公告)日：2022-10-06

申请号：US17840138

申请日：2022-06-14

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C11D11/00 ,  C11D7/32 ,  C11D7/36 ,  H01L21/02

Abstract: An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.2 to 10, and the mass ratio of the component C content to the sum of the component A content and the component B content is 5 to 100.

公开(公告)号：US20220276561A1

公开(公告)日：2022-09-01

申请号：US17740438

申请日：2022-05-10

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi Takahashi

IPC: G03F7/32 ,  C08F14/26 ,  B65D88/08 ,  C08F10/06 ,  B65D88/06 ,  G03F7/16

Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

公开(公告)号：US20220221798A1

公开(公告)日：2022-07-14

申请号：US17707979

申请日：2022-03-30

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027

Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes: one compound (A) that satisfies the requirement (a); one compound (B) or two or more compounds (B) that satisfy the requirement (b); and one inorganic matter (C) or two or more inorganic matters (C) having any element selected from the group consisting of Al, B, S, N, and K. Here, a total content of the compound (B) in the treatment liquid is 10−10 to 0.1 mass %, and a ratio P of the inorganic matter (C) to the compound (B) is 103 to 10−6.

公开(公告)号：US20220089909A1

公开(公告)日：2022-03-24

申请号：US17542486

申请日：2021-12-05

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C09G1/02 ,  H01L21/321

Abstract: An object of the present invention is to provide a polishing liquid which reduces the occurrence of erosion and scratches on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished. In addition, another object of the present invention is to provide a chemical mechanical polishing method using the above-mentioned polishing liquid.
The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid including colloidal silica, an organic acid, a specific nitrogen-containing aromatic heterocyclic compound, and hydrogen peroxide, in which a pH is 8.5 to 12.

公开(公告)号：US20210397098A1

公开(公告)日：2021-12-23

申请号：US17465828

申请日：2021-09-02

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/40 ,  G03F7/32 ,  H01L21/027

Abstract: The present invention provides a chemical liquid having excellent residue removal performance, a rinsing solution, and a resist pattern forming method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an alcohol-based solvent having a C log P value of more than −1.00 and 3.00 or less and a specific compound selected from the group consisting of a compound represented by Formula (1) and a compound represented by Formula (2), in which a content of the specific compound is 0.0010 to 10 ppb by mass with respect to a total mass of the chemical liquid.

公开(公告)号：US20210222092A1

公开(公告)日：2021-07-22

申请号：US17219818

申请日：2021-03-31

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC: C11D7/36 ,  C11D7/26 ,  H01L21/02 ,  G03F7/32 ,  C11D7/20 ,  C11D11/00

Abstract: An object of the present invention is to provide a chemical liquid and a chemical liquid storage body having excellent performance of inhibiting metal impurity-containing defects. The chemical liquid according to an embodiment of the present invention contains an organic solvent, organic impurities, and metal impurities, in which the organic impurities contain a phosphoric acid ester and an adipic acid ester, and a mass ratio of a content of the phosphoric acid ester to a content of the adipic acid ester is equal to or higher than 1.

公开(公告)号：US20210157241A1

公开(公告)日：2021-05-27

申请号：US17161058

申请日：2021-01-28

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/32 ,  H01L21/027 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  H01L21/768 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  G03F7/16 ,  H01L21/3205 ,  G03F7/075 ,  H01L21/28 ,  G03F7/40 ,  B24B37/00 ,  H01L21/304 ,  H01L21/3065

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.