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61.发明授权Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal 失效硅晶体的液相生长方法，太阳能电池的制造方法和硅晶体的液相生长装置公开(公告)号：US07118625B2
公开(公告)日：2006-10-10
申请号：US10676094
申请日：2003-10-02
IPC分类号： C30B25/12
CPC分类号： C30B19/00 , C30B29/06 , Y02E10/546
摘要： With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.
摘要翻译： 关于通过将基板浸渍在溶剂中或使基板与溶剂接触而使硅晶体在基板上生长的硅晶体的液相生长方法，含有原料和/或掺杂剂的气体为 在至少一部分气体通过施加能量而分解后，供给溶剂。 以这种方式，提供了一种用于硅晶体的液相生长方法，能够实现连续生长并适合批量生产的方法，一种太阳能电池的制造方法和用于硅晶体的液相生长装置。
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公开(公告)号：US20060160336A1
公开(公告)日：2006-07-20
申请号：US10563115
申请日：2005-05-17
申请人： Masaki Mizutani , Shoji Nishida , Katsumi Nakagawa
发明人： Masaki Mizutani , Shoji Nishida , Katsumi Nakagawa
CPC分类号： H01L31/182 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02658 , Y02E10/546 , Y02P70/521
摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.
摘要翻译： 通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成 硅层中的pn结。 因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。
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公开(公告)号：US07014711B2
公开(公告)日：2006-03-21
申请号：US10385457
申请日：2003-03-12
IPC分类号： C30B35/00
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
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公开(公告)号：US20060054078A1
公开(公告)日：2006-03-16
申请号：US11270562
申请日：2005-11-10
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
摘要翻译： 用于在基板上生长晶体的液相生长装置包括含有含有用于形成晶体的粘结材料的溶液的坩埚和用于垂直保持基板的基板保持器。 衬底保持器包括连接器，接收部件和推动部件。 接收部件和推动部件彼此相对并且通过连接器连接。 推动部件保持基板的上部，而接收部件保持基板的下部。 将含有垂直保持的基板的基板保持器浸入溶液中。 接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。
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公开(公告)号：US06951585B2
公开(公告)日：2005-10-04
申请号：US10397310
申请日：2003-03-27
CPC分类号： H01L31/182 , C30B19/02 , C30B29/06 , Y02E10/546 , Y02P70/521
摘要： A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.
摘要翻译： 一种液晶生长方法，用于将熔融物中的多晶衬底浸入其中溶解晶体成分的坩埚中，从而在基底上生长多晶体，包括将多晶生长至预定厚度的第一步骤和用于熔化的第二步骤 将在熔体中第一步生长的一部分多晶体返回，其中在第一步骤和第二步骤之间改变衬底和熔体之间的相对位置，使不同温度的熔体与多晶表面接触。 所获得的多晶体具有与常规太阳能电池中使用的多晶体的性能相当的特性，但在应用于太阳能电池的情况下几乎没有诸如栅电极的线断线等故障的风险，并且可以以低成本大量获得。
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66.发明授权公开(公告)号：US06951584B2
公开(公告)日：2005-10-04
申请号：US10364517
申请日：2003-02-12
申请人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
发明人： Noritaka Ukiyo , Tetsuro Saito , Tatsumi Shoji , Makoto Iwakami , Takehito Yoshino , Shoji Nishida , Masaaki Iwane , Masaki Mizutani
CPC分类号： C30B29/06 , C30B19/062
摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
摘要翻译： 一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。
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公开(公告)号：US20050087226A1
公开(公告)日：2005-04-28
申请号：US10957577
申请日：2004-10-05
申请人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.
摘要翻译： 根据本发明的电极布置方法包括：在具有不平坦度的硅基底（101）上布置用于与硅形成共晶的电极材料（103）; 在等于或高于硅和电极材料（103）的共晶温度的温度下加热硅基底（101）; 并且冷却硅基底（101）以使正好在布置的电极材料（103）下面的硅基底的表面上的凹凸变平。 本发明可以提供一种在不平坦表面上设置电极的方法，这是一种简单的方法并且可以批量生产，更具体地说，一种在太阳能电池的表面上设置电极的方法，其可以实现高效率 太阳能电池。
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68.发明授权Process for producing semiconductor member, and process for producing solar cell 失效半导体部件的制造方法以及太阳能电池的制造方法公开(公告)号：US06566235B2
公开(公告)日：2003-05-20
申请号：US09819680
申请日：2001-03-29
IPC分类号： H01L2146
CPC分类号： H01L21/02032 , H01L21/3083 , H01L21/76259 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps. This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly. Also disclosed is a process for producing a solar cell by the above process.
摘要翻译： 一种半导体部件的制造方法，其特征在于，包括：通过在其表面部分形成多孔第一部件而形成多孔层的第一工序，使一部分区域或多个区域形成多孔; 将形成在所述多孔层上的半导体层和未形成多孔的所述第一构件表面接合到第二构件以形成接合结构的第二步骤; 以及在多孔层的一部分分离结合结构的第三步骤。 第一个构件是多孔的，留下一些不是多孔的区域或区域，使得多孔层在第一和第二步骤中在多孔层的部分处不引起任何分离。该方法可以使半导体层与单个层不可分离 在将半导体层转移到支撑构件侧的分离之前的晶体硅构件，而不严格地设定阳极氧化条件。还公开了通过上述方法制造太阳能电池的方法。
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公开(公告)号：US06534382B1
公开(公告)日：2003-03-18
申请号：US09634542
申请日：2000-08-08
IPC分类号： H01L2130
CPC分类号： H01L21/76259 , B28D5/00 , G02F1/136277 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254 , H01L22/00 , H01L31/068 , H01L31/1804 , H01L31/1892 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , Y02E10/547 , Y02P70/521 , H01L2924/00
摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
摘要翻译： 提供一种半导体制品的制造方法，其包括以下步骤：将膜粘合到具有多孔半导体层的基板上，并通过在剥离方向上对膜施加力而在多孔半导体层处将膜与基板分离。
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70.发明授权Method of growing silicon crystal in liquid phase and method of producing solar cell 失效在液相中生长硅晶体的方法和生产太阳能电池的方法公开(公告)号：US06429035B2
公开(公告)日：2002-08-06
申请号：US09198263
申请日：1998-11-24
申请人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
发明人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
IPC分类号： H01L2120
CPC分类号： H01L27/1296 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , H01L29/66765 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined concentration into indium melted in a carbon boat or a quartz crucible, supersaturating the melt, and submerging a substrate into the melt, thereby growing a silicon crystal containing a dopant element. This method can provide a method of growing a thin film of crystalline silicon having a high crystallinity and a dopant concentration favorably controlled, thereby serving for mass production of inexpensive solar cells which have high performance as well as image displays which have high contrast and are free from color ununiformity.
摘要翻译： 在液相中生长单晶硅的方法包括通过将以预定浓度的含有硼，铝，磷或砷的硅的固体溶解在在碳舟或石英坩埚中熔化的铟中来制备熔体，使熔体过饱和，以及 将衬底浸入熔体中，从而生长含有掺杂元素的硅晶体。 该方法可以提供一种生长具有高结晶度和有利于控制的掺杂剂浓度的晶体硅薄膜的方法，从而用于批量生产具有高性能的廉价太阳能电池以及具有高对比度且无游离的图像显示器 从颜色不均匀。
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