Stencil printing machine
    62.
    发明申请
    Stencil printing machine 失效
    模版印刷机

    公开(公告)号:US20050160926A1

    公开(公告)日:2005-07-28

    申请号:US11039833

    申请日:2005-01-24

    IPC分类号: B41L13/04 B41L13/18 B41F15/40

    CPC分类号: B41L13/18

    摘要: A stencil printing machine includes: a drum which is freely rotatable and has an outer peripheral wall formed of an ink impermeable member, in which a stencil sheet is mounted on a surface of the outer peripheral wall; an ink supply device which has an ink supply port on the outer peripheral wall of the drum, and supplies ink to the surface of the outer peripheral wall from the ink supply port; a pressure roller which presses a print medium fed thereto to the outer peripheral wall; and a first cap device capable of closing the ink supply port. Moreover, the stencil printing machine further includes: an ink return device which has an ink return port on the outer peripheral wall, and returns the ink which flows into the ink return port; and a second cap device capable of closing the ink return port.

    摘要翻译: 模版印刷机包括:滚筒,其可自由旋转并具有由不透油部件形成的外周壁,其中,蜡纸安装在外周壁的表面上; 墨水供应装置,其在所述滚筒的外周壁上具有供墨口,并且从所述供墨口向所述外周壁的表面供墨; 压力辊,其将供给到其的打印介质按压到所述外周壁; 以及能够关闭供墨口的第一盖装置。 此外,模版印刷机还包括:回墨装置,其在外周壁上具有墨返回口,并且返回流入墨返回口的墨; 以及能够关闭墨返回口的第二盖装置。

    Organic polymer film and method for producing the same
    63.
    发明申请
    Organic polymer film and method for producing the same 审中-公开
    有机聚合物膜及其制造方法

    公开(公告)号:US20050059788A1

    公开(公告)日:2005-03-17

    申请号:US10901189

    申请日:2004-07-29

    IPC分类号: C08F2/52 C08F38/00

    CPC分类号: C08F2/52

    摘要: An organic polymer film with high mechanical strength, which is produced by a method comprising the steps of supplying a raw material gas containing an organic compound having at least one carbon-carbon triple bond in a molecule into a reaction chamber under reduced pressure, exciting the raw material gas in plasma generated in the reaction chamber, depositing the excited raw material gas on a surface of a substrate placed in the reaction chamber, and growing an organic polymer film on the surface of the substrate.

    摘要翻译: 一种具有高机械强度的有机聚合物膜,其通过包括以下步骤的方法制备:将分子内含有至少一个碳 - 碳三键的有机化合物的原料气体在减压下供给到反应室中, 在反应室中产生的等离子体中的原料气体,将被激发的原料气体沉积在放置在反应室中的基板的表面上,并在基板的表面上生长有机聚合物膜。

    Polyoxyalkylene monoalkyl ether, process for producing the same, polymerizable polyoxyalkylene monoalkyl ether derivative, polymer of said derivative and dispersant comprising said polymer
    64.
    发明授权
    Polyoxyalkylene monoalkyl ether, process for producing the same, polymerizable polyoxyalkylene monoalkyl ether derivative, polymer of said derivative and dispersant comprising said polymer 有权
    聚氧化烯单烷基醚,其制备方法,可聚合的聚氧化烯单烷基醚衍生物,所述衍生物的聚合物和包含所述聚合物

    公开(公告)号:US06780928B1

    公开(公告)日:2004-08-24

    申请号:US10645508

    申请日:2003-08-22

    IPC分类号: C08J302

    摘要: A polyoxyalkylene monoalkyl ether which gives, in gel permeation chromatography, a chromatogram which satisfies a relation expressed by an equation: S1/S0≦0.15, wherein S1 represents the area under a portion of the chromatogram from the start of elution to the earliest elution time when the intensity of the refractive index has a value of L/3, L representing the shortest distance between the greatest maximum point of the intensity of the refractive index and the base line and S0 represents the area under a portion of the chromatogram from the start of elution to an elution time when the intensity of the refractive index has the greatest maximum value; a process for producing the above ether comprising adjusting the content of water in a reactor, which is used in addition polymerization of alkylene oxides with addition to a monohydric alcohol, so as to satisfy an equation: Wi×(Cf−Ci)/V≦10, wherein the content of water in the reactor is obtained by placing a solvent having a content of water Ci (ppm) in an amount Wi (g) in the reactor having an inner volume V (ml), stirring the solvent to clean the reactor, removing the solvent from the reactor and obtaining a content of water Cf (ppm) in the removed solvent; a polymerizable derivative of the above ether; a polymer of this derivative, and a dispersant comprising this polymer. A high purity polyoxyalkylene monoalkyl ether can be obtained and the dispersant comprising the polymer derived from this ether have an excellent dispersing property.

    摘要翻译: 聚氧化烯单烷基醚,其在凝胶渗透色谱法中得到满足由下式表示的关系的色谱图:S1 / S0 <= 0.15,WHEREIN S1表示从洗脱开始到最早洗脱的色谱图部分的面积 折射率的强度为L / 3的时间,L表示折射率的最大最大点与基线之间的最短距离,S0表示来自该折射率的部分色谱图的面积 当折射率的强度具有最大值时,开始洗脱至洗脱时间; 一种制备上述醚的方法,包括调节反应器中的水含量,该反应器用于加成环氧烷与一元醇的加成聚合,以满足下式:Wix(Cf-Ci)/ V <= 10,其中反应器中的水含量是通过将具有内容积V(ml)的反应器中具有含量为Wi(g)的水分量(ppm)的溶剂置于内部体积V(ml)中,搅拌溶剂来清洗 从反应器中除去溶剂,并在去除的溶剂中获得水含量Cf(ppm); 上述醚的可聚合衍生物; 该衍生物的聚合物和包含该聚合物的分散剂。可以获得高纯度的聚氧化烯单烷基醚,并且包含由该醚衍生的聚合物的分散剂具有优异的分散性。

    Controllable bending endoscope
    65.
    发明授权
    Controllable bending endoscope 有权
    可弯曲内窥镜

    公开(公告)号:US06569086B2

    公开(公告)日:2003-05-27

    申请号:US09817931

    申请日:2001-03-27

    IPC分类号: A61B100

    CPC分类号: A61B1/0052 A61B1/0016

    摘要: An operational remote controller integrates a joystick for bending a bending portion of an inserted portion in an endoscope. A bending lever stands on the joystick. For every automatically returning of the bending lever to a neutral position, a CPU of the operational remote controller detects the neutral position and sets an insensitive band within a predetermined range of the neutral position. Thus, the insensitive band can be set within a relatively narrow range irrespective of variation of neutral positions. The CPU supplies positional information of the bending lever to a control circuit for controlling a motor drive circuit. The control circuit controls a motor drive circuit based on the supplied positional information, and the motor drive circuit drives a motor to bend the bending portion of the inserted portion.

    摘要翻译: 操作遥控器集成了用于弯曲插入部分在内窥镜中的弯曲部分的操纵杆。 操纵杆上有弯曲杆。 为了将弯曲杆自动返回到中立位置,操作遥控器的CPU检测中立位置,并将不敏感带设置在中立位置的预定范围内。 因此,不管中性位置的变化,不敏感带可以设定在相对窄的范围内。 CPU将弯曲杆的位置信息提供给用于控制电动机驱动电路的控制电路。 控制电路基于所提供的位置信息来控制电动机驱动电路,并且电动机驱动电路驱动电动机弯曲插入部分的弯曲部分。

    Semiconductor device and method of manufacturing the semiconductor device
    68.
    发明授权
    Semiconductor device and method of manufacturing the semiconductor device 失效
    半导体装置及其制造方法

    公开(公告)号:US06174766B1

    公开(公告)日:2001-01-16

    申请号:US09098436

    申请日:1998-06-17

    IPC分类号: H01L2976

    摘要: A method for manufacturing a semiconductor device which ensures the reliability of the connection between a metal wiring of the device to a MOS transistor of the device and which enables the metal wiring to be connected to an electrode of a capacitor of the device without any deteriorating a metal oxide dielectric film of the capacitor is provided. In the method, a transistor having a source/drain region and a gate electrode is formed on a semiconductor substrate. Then, a capacitor is formed on the substrate and has an upper capacitor electrode, a lower capacitor electrode, and a metallic oxide dielectric film disposed between the upper capacitor electrode and the lower capacitor electrode. An insulating film is formed over the capacitor such that the insulating film covers the capacitor, and a transistor contact hole is formed through the insulating film for providing an electrical connection to the transistor while the capacitor is covered via the insulating film and not exposed to an atmosphere when the first contact hole is formed. Also, a capacitor contact hole is formed through the insulating film for providing an electrical connection to the capacitor after the transistor contact hole is formed. A device manufactured by the above method is also provided.

    摘要翻译: 一种制造半导体器件的方法,其确保器件的金属布线与器件的MOS晶体管之间的连接的可靠性,并且能够使金属布线连接到器件的电容器的电极而不会劣化 提供电容器的金属氧化物介电膜。 在该方法中,在半导体衬底上形成具有源极/漏极区域和栅电极的晶体管。 然后,在基板上形成电容器,具有设置在上部电容电极和下部电容器电极之间的上部电容电极,下部电容电极和金属氧化物电介质膜。 在电容器上形成绝缘膜,使得绝缘膜覆盖电容器,并且通过绝缘膜形成晶体管接触孔,用于在晶体管提供电连接的同时,通过绝缘膜覆盖电容器,而不暴露于 形成第一接触孔时的气氛。 此外,在形成晶体管接触孔之后,通过绝缘膜形成电容器接触孔,以提供与电容器的电连接。 还提供了通过上述方法制造的装置。

    Polishing machine for flattening substrate surface
    69.
    发明授权
    Polishing machine for flattening substrate surface 有权
    抛光机用于平坦化基材表面

    公开(公告)号:US6165056A

    公开(公告)日:2000-12-26

    申请号:US203392

    申请日:1998-12-02

    摘要: There is disclosed a polishing machine capable of flattening a wafer surface uniformly. The machine can modify the flatness of the surface during polishing. The machine has an index table and a polishing head 18. The table attracts the wafer to be polished such that the wafer faces upward. The table rotates to the primary polishing station. The polishing head has a pressure application cylinder 21 and a base plate 22. The cylinder is held to a carrier at a given angle. The base plate holds polishing cloth 24 and is mounted to the cylinder so as to be swingable in three dimensions. The cloth touches the wafer surface and rotates at a high speed, thus flattening it. At the second polishing station, polishing cloth attached to another polishing head touches the wafer surface and rotates at a high speed, thus finally polishing the wafer surface.

    摘要翻译: 公开了能够使晶片表面均匀地平坦化的抛光机。 该机器可以在抛光过程中改变表面的平整度。 机器具有分度台和抛光头18.该台吸引要抛光的晶片,使晶片朝上。 工作台旋转到主抛光台。 研磨头具有加压缸21和底板22.气缸以给定的角度保持在载体上。 基板保持抛光布24,并且安装到圆筒上,以便能够在三维上摆动。 布接触晶片表面并高速旋转,从而使其平坦化。 在第二研磨站,附着在另一研磨头上的研磨布接触晶片表面并高速旋转,从而最终抛光晶片表面。

    Semiconductor device with conductive plugs
    70.
    发明授权
    Semiconductor device with conductive plugs 失效
    带导电插头的半导体器件

    公开(公告)号:US6004839A

    公开(公告)日:1999-12-21

    申请号:US804112

    申请日:1997-02-20

    摘要: In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.

    摘要翻译: 在制造半导体器件的方法中,在衬底上形成由N沟道MOS晶体管和P沟道MOS晶体管组成的CMOS部分和至少由传输门MOS晶体管组成的存储部分。 形成多个导电插塞以穿透层压绝缘膜到MOS晶体管。 层叠绝缘膜由第一绝缘膜和第二绝缘膜构成。 在层叠绝缘膜上形成电容器部,电容部由上部电极,电介质膜和下部电极构成。 在层压绝缘膜和电容器部分上形成第三绝缘膜。 在第三绝缘膜上形成布线图案,以部分地穿透连接到多个导电插塞的第二绝缘膜。 布线图案可以布置在层压绝缘膜中以连接多个导电插塞中的至少两个。