摘要:
A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要:
A stencil printing machine includes: a drum which is freely rotatable and has an outer peripheral wall formed of an ink impermeable member, in which a stencil sheet is mounted on a surface of the outer peripheral wall; an ink supply device which has an ink supply port on the outer peripheral wall of the drum, and supplies ink to the surface of the outer peripheral wall from the ink supply port; a pressure roller which presses a print medium fed thereto to the outer peripheral wall; and a first cap device capable of closing the ink supply port. Moreover, the stencil printing machine further includes: an ink return device which has an ink return port on the outer peripheral wall, and returns the ink which flows into the ink return port; and a second cap device capable of closing the ink return port.
摘要:
An organic polymer film with high mechanical strength, which is produced by a method comprising the steps of supplying a raw material gas containing an organic compound having at least one carbon-carbon triple bond in a molecule into a reaction chamber under reduced pressure, exciting the raw material gas in plasma generated in the reaction chamber, depositing the excited raw material gas on a surface of a substrate placed in the reaction chamber, and growing an organic polymer film on the surface of the substrate.
摘要:
A polyoxyalkylene monoalkyl ether which gives, in gel permeation chromatography, a chromatogram which satisfies a relation expressed by an equation: S1/S0≦0.15, wherein S1 represents the area under a portion of the chromatogram from the start of elution to the earliest elution time when the intensity of the refractive index has a value of L/3, L representing the shortest distance between the greatest maximum point of the intensity of the refractive index and the base line and S0 represents the area under a portion of the chromatogram from the start of elution to an elution time when the intensity of the refractive index has the greatest maximum value; a process for producing the above ether comprising adjusting the content of water in a reactor, which is used in addition polymerization of alkylene oxides with addition to a monohydric alcohol, so as to satisfy an equation: Wi×(Cf−Ci)/V≦10, wherein the content of water in the reactor is obtained by placing a solvent having a content of water Ci (ppm) in an amount Wi (g) in the reactor having an inner volume V (ml), stirring the solvent to clean the reactor, removing the solvent from the reactor and obtaining a content of water Cf (ppm) in the removed solvent; a polymerizable derivative of the above ether; a polymer of this derivative, and a dispersant comprising this polymer. A high purity polyoxyalkylene monoalkyl ether can be obtained and the dispersant comprising the polymer derived from this ether have an excellent dispersing property.
摘要:
An operational remote controller integrates a joystick for bending a bending portion of an inserted portion in an endoscope. A bending lever stands on the joystick. For every automatically returning of the bending lever to a neutral position, a CPU of the operational remote controller detects the neutral position and sets an insensitive band within a predetermined range of the neutral position. Thus, the insensitive band can be set within a relatively narrow range irrespective of variation of neutral positions. The CPU supplies positional information of the bending lever to a control circuit for controlling a motor drive circuit. The control circuit controls a motor drive circuit based on the supplied positional information, and the motor drive circuit drives a motor to bend the bending portion of the inserted portion.
摘要:
In a method for manufacturing a semiconductor device having a first insulation film, a second insulation film formed over the first insulation film, an inlayed interconnection layer formed in the second insulation film, and an organic film provided on the inlayed interconnection layer and the second insulation film, the organic film having a dielectric constant lower than the second insulation film, the organic film is grown inside a vacuum chamber.
摘要:
In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be prolonged.
摘要:
A method for manufacturing a semiconductor device which ensures the reliability of the connection between a metal wiring of the device to a MOS transistor of the device and which enables the metal wiring to be connected to an electrode of a capacitor of the device without any deteriorating a metal oxide dielectric film of the capacitor is provided. In the method, a transistor having a source/drain region and a gate electrode is formed on a semiconductor substrate. Then, a capacitor is formed on the substrate and has an upper capacitor electrode, a lower capacitor electrode, and a metallic oxide dielectric film disposed between the upper capacitor electrode and the lower capacitor electrode. An insulating film is formed over the capacitor such that the insulating film covers the capacitor, and a transistor contact hole is formed through the insulating film for providing an electrical connection to the transistor while the capacitor is covered via the insulating film and not exposed to an atmosphere when the first contact hole is formed. Also, a capacitor contact hole is formed through the insulating film for providing an electrical connection to the capacitor after the transistor contact hole is formed. A device manufactured by the above method is also provided.
摘要:
There is disclosed a polishing machine capable of flattening a wafer surface uniformly. The machine can modify the flatness of the surface during polishing. The machine has an index table and a polishing head 18. The table attracts the wafer to be polished such that the wafer faces upward. The table rotates to the primary polishing station. The polishing head has a pressure application cylinder 21 and a base plate 22. The cylinder is held to a carrier at a given angle. The base plate holds polishing cloth 24 and is mounted to the cylinder so as to be swingable in three dimensions. The cloth touches the wafer surface and rotates at a high speed, thus flattening it. At the second polishing station, polishing cloth attached to another polishing head touches the wafer surface and rotates at a high speed, thus finally polishing the wafer surface.
摘要:
In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.