公开(公告)号：US20050059788A1

公开(公告)日：2005-03-17

申请号：US10901189

申请日：2004-07-29

申请人： Nobutaka Kunimi ,  Masashi Komatsu ,  Jun Kawahara ,  Yoshihiro Hayashi

发明人： Nobutaka Kunimi ,  Masashi Komatsu ,  Jun Kawahara ,  Yoshihiro Hayashi

IPC分类号： C08F2/52 ,  C08F38/00

CPC分类号： C08F2/52

摘要： An organic polymer film with high mechanical strength, which is produced by a method comprising the steps of supplying a raw material gas containing an organic compound having at least one carbon-carbon triple bond in a molecule into a reaction chamber under reduced pressure, exciting the raw material gas in plasma generated in the reaction chamber, depositing the excited raw material gas on a surface of a substrate placed in the reaction chamber, and growing an organic polymer film on the surface of the substrate.

摘要翻译： 一种具有高机械强度的有机聚合物膜，其通过包括以下步骤的方法制备：将分子内含有至少一个碳 - 碳三键的有机化合物的原料气体在减压下供给到反应室中， 在反应室中产生的等离子体中的原料气体，将被激发的原料气体沉积在放置在反应室中的基板的表面上，并在基板的表面上生长有机聚合物膜。

公开(公告)号：US07524908B2

公开(公告)日：2009-04-28

申请号：US11140185

申请日：2005-05-27

申请人： Jun Kawahara ,  Keizo Kinoshita ,  Nobutaka Kunimi ,  Akinori Nakano

发明人： Jun Kawahara ,  Keizo Kinoshita ,  Nobutaka Kunimi ,  Akinori Nakano

IPC分类号： C08F30/08

CPC分类号： C08F238/02 ,  C08F212/34 ,  C08F2/34

摘要： A copolymerized high polymer film includes plural organic polymers, as skeleton, and is manufactured by blowing more than two kinds of organic monomers of respectively specific structures, in a vapor phase condition, onto the surface of a heated substrate, through plasma being generated in a reaction chamber. As a result, manufacture of an organic high polymer film capable of further reducing the effective relative permittivity of organic polymer films as a whole can be achieved, and, at the same time, further improvement in mechanical strength of film as well as film forming speed can be achieved.

摘要翻译： 共聚高分子膜包含多个作为骨架的有机聚合物，并且通过在气相中将两种具有特定结构的有机单体在汽相条件下吹送到加热的基板的表面上，通过在 反应室。 结果，可以实现能够进一步降低有机聚合物膜整体的有效相对介电常数的有机高分子膜的制造，并且同时进一步提高膜的机械强度以及成膜速度 可以实现。

公开(公告)号：US20060052560A1

公开(公告)日：2006-03-09

申请号：US11186856

申请日：2005-07-22

申请人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

发明人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

IPC分类号： C08F230/08

CPC分类号： C08F230/08 ,  C08F238/00

摘要： A copolymer film having a decreased dielectric constant which is produced by supplying at least two organic monomers as raw materials, forming a film of a copolymer comprising a backbone based on said at least two monomers on a surface of a substrate, and heating the copolymer film at a temperature higher than a temperature at which the copolymer film is formed.

摘要翻译： 一种具有降低的介电常数的共聚物膜，其通过供给至少两种有机单体作为原料制备，在基材表面上形成基于所述至少两种单体的主链的共聚物的膜，并加热共聚物膜 在高于共聚物膜形成温度的温度下进行。

公开(公告)号：US20050282987A1

公开(公告)日：2005-12-22

申请号：US11140185

申请日：2005-05-27

申请人： Jun Kawahara ,  Keizo Kinoshita ,  Nobutaka Kunimi ,  Akinori Nakano

发明人： Jun Kawahara ,  Keizo Kinoshita ,  Nobutaka Kunimi ,  Akinori Nakano

IPC分类号： C07F7/18 ,  C08F30/08 ,  C08F212/34 ,  C08F238/00 ,  C08F238/02 ,  C23C14/12 ,  H01L21/312

CPC分类号： C08F238/02 ,  C08F212/34 ,  C08F2/34

摘要： A copolymerized high polymer film includes plural organic polymers, as skeleton, and is manufactured by blowing more than two kinds of organic monomers of respectively specific structures, in a vapor phase condition, onto the surface of a heated substrate, through plasma being generated in a reaction chamber. As a result, manufacture of an organic high polymer film capable of further reducing the effective relative permittivity of organic polymer films as a whole can be achieved, and, at the same time, further improvement in mechanical strength of film as well as film forming speed can be achieved.

摘要翻译： 共聚高分子膜包含多个作为骨架的有机聚合物，并且通过在气相中将两种具有特定结构的有机单体在汽相条件下吹送到加热的基板的表面上，通过在 反应室。 结果，可以实现能够进一步降低有机聚合物膜整体的有效相对介电常数的有机高分子膜的制造，并且同时进一步提高膜的机械强度以及成膜速度 可以实现。

公开(公告)号：US07439315B2

公开(公告)日：2008-10-21

申请号：US11186856

申请日：2005-07-22

申请人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

发明人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

IPC分类号： C08F30/08 ,  C08F38/02

CPC分类号： C08F230/08 ,  C08F238/00

摘要： A copolymer film having a decreased dielectric constant which is produced by supplying at least two organic monomers as raw materials, forming a film of a copolymer comprising a backbone based on said at least two monomers on a surface of a substrate, and heating the copolymer film at a temperature higher than a temperature at which the copolymer film is formed.

摘要翻译： 一种具有降低的介电常数的共聚物膜，其通过供给至少两种有机单体作为原料制备，在基材表面上形成基于所述至少两种单体的主链的共聚物的膜，并加热共聚物膜 在高于共聚物膜形成温度的温度下进行。

公开(公告)号：US07220810B2

公开(公告)日：2007-05-22

申请号：US11153604

申请日：2005-06-16

申请人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

发明人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

IPC分类号： C08F30/08 ,  C08J7/18

CPC分类号： C08F230/06

摘要： A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.

摘要翻译： 制造具有低介电常数的聚合物膜聚合含有式（1）化合物的原料气体：其中PCA表示多环脂族烃基，ALK表示二价脂族烃基，m为1或2，n为0 或1，并且通过等离子体聚合法，R 1和R 2彼此独立地表示烷基，烯基，炔基，烷氧基，芳基或芳氧基。

公开(公告)号：US20060009600A1

公开(公告)日：2006-01-12

申请号：US11153604

申请日：2005-06-16

申请人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

发明人： Nobutaka Kunimi ,  Jun Kawahara ,  Akinori Nakano ,  Keizo Kinoshita

IPC分类号： C08F30/08

CPC分类号： C08F230/06

摘要： A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.

摘要翻译： 制造具有低介电常数的聚合物膜聚合含有式（1）化合物的原料气体：其中PCA表示多环脂族烃基，ALK表示二价脂族烃基，m为1或2，n为0 或1，并且通过等离子体聚合法，R 1和R 2彼此独立地表示烷基，烯基，炔基，烷氧基，芳基或芳氧基。

公开(公告)号：US06541396B2

公开(公告)日：2003-04-01

申请号：US09983378

申请日：2001-10-24

申请人： Jun Kawahara ,  Yoshihiro Hayashi

发明人： Jun Kawahara ,  Yoshihiro Hayashi

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： In a method for manufacturing a semiconductor device having a first insulation film, a second insulation film formed over the first insulation film, an inlaid interconnection formed in the second insulation film, and an organic film provided on the inlaid interconnection layer and the second insulation film, the organic film having a dielectric constant lower than the second insulation film, the organic film is grown inside a vacuum chamber.

摘要翻译： 在制造具有第一绝缘膜的半导体器件的方法中，形成在第一绝缘膜上的第二绝缘膜，形成在第二绝缘膜中的嵌入互连以及设置在镶嵌互连层上的有机膜和第二绝缘膜 有机膜的介电常数低于第二绝缘膜，有机膜在真空室内生长。

公开(公告)号：US6100201A

公开(公告)日：2000-08-08

申请号：US33912

申请日：1998-03-03

申请人： Yukihiko Maejima ,  Jun Kawahara ,  Shinobu Saitoh ,  Yoshihiro Hayashi

发明人： Yukihiko Maejima ,  Jun Kawahara ,  Shinobu Saitoh ,  Yoshihiro Hayashi

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/461

CPC分类号： H01L28/55 ,  H01L21/3105 ,  H01L21/31122

摘要： A method of forming a capacitor by forming a dielectric layer over a bottom electrode layer, forming a top electrode layer over the dielectric layer to form laminations of the bottom electrode layer, the dielectric layer and the top electrode layer, and selectively etching the laminations to form a capacitor, the dielectric layer being etched by a reactive ion etching so that the dielectric layer of the capacitor receives no substantive damage in the etching process.

摘要翻译： 一种通过在底部电极层上形成电介质层形成电容器的方法，在电介质层上形成顶部电极层以形成底部电极层，电介质层和顶部电极层的叠层，并选择性地蚀刻叠片至 形成电容器，通过反应离子蚀刻蚀刻电介质层，使得电容器的电介质层在蚀刻工艺中不会受到实质的损坏。

公开(公告)号：US08759212B2

公开(公告)日：2014-06-24

申请号：US13101569

申请日：2011-05-05

申请人： Ippei Kume ,  Jun Kawahara ,  Naoya Furutake ,  Shinobu Saitou ,  Yoshihiro Hayashi

发明人： Ippei Kume ,  Jun Kawahara ,  Naoya Furutake ,  Shinobu Saitou ,  Yoshihiro Hayashi

IPC分类号： H01L21/4763 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76883 ,  H01L21/76895 ,  H01L23/5227 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes: forming a cap insulating film, including Si and C, on a substrate; forming an organic silica film, having a composition ratio of the number of carbon atoms to the number of silicon atoms higher than that of the cap insulating film, on the cap insulating film; and forming two or more concave portions, having different opening diameters, in the organic silica film, by plasma processing in which mixed gas including inert gas, N-containing gas, fluorocarbon gas and oxidant gas is used.

摘要翻译： 一种制造半导体器件的方法包括：在衬底上形成包括Si和C的帽绝缘膜; 在盖绝缘膜上形成具有碳原子数与硅原子数相比高于盖绝缘膜的组成比的有机二氧化硅膜; 在有机二氧化硅膜中形成具有不同开口直径的两个以上的凹部，通过使用包含惰性气体，含N气体，碳氟化合物气体和氧化剂气体的混合气体的等离子体处理。