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61.发明授权公开(公告)号：US08435346B2
公开(公告)日：2013-05-07
申请号：US12366324
申请日：2009-02-05
IPC分类号： C30B35/00
CPC分类号： H01L21/02678 , B23K26/0608 , B23K26/066 , B23K26/067 , B23K26/073 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.
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62.发明授权Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus 失效结晶装置，结晶方法，相位调制元件，装置和显示装置公开(公告)号：US07540921B2
公开(公告)日：2009-06-02
申请号：US10790828
申请日：2004-03-03
IPC分类号： C30B35/00
CPC分类号： H01L21/02678 , B23K26/0608 , B23K26/066 , B23K26/067 , B23K26/073 , H01L21/2026 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.
摘要翻译： 根据本发明的相位调制元件具有基于具有预定尺寸的相位调制单元具有第一相位值的第一区域和具有基于具有预定尺寸的相位调制单元的具有第二相位值的第二区域，并且每个 相位分布由第一区域和第二区域的面积份额的变化取决于每个位置来定义。
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63.发明申请公开(公告)号：US20070211327A1
公开(公告)日：2007-09-13
申请号：US11749488
申请日：2007-05-16
IPC分类号： G02F1/01
CPC分类号： G03B27/72
摘要： A light application apparatus includes an optical modulation element provided with a plurality of phase steps, a light beam which is entered into the optical modulation element being phase-modulated by the phase steps and exits from the optical modulation element as a light beam having a first light intensity distribution. An optical system is arranged between the optical modulation element and an predetermined plane. The optical system divides the phase-modulated light beam into at least two light fluxes having second and third light intensity distributions and different optical characteristics from each other, and projects a light beam including the divided two light fluxes, the light intensity distributions of the projected light fluxes being combined with each other, so that the projected light beam has a fourth light intensity distribution with an inverse peak shape on the predetermined plane and enters the predetermined plane. The first to fourth light intensity distributions are different from each other on the predetermined plane.
摘要翻译： 一种光应用装置，包括具有多个相位步进的光调制元件，入射到光调制元件中的光束被相位步进相位调制并从光调制元件出射，作为具有第一 光强分布。 光学系统布置在光调制元件和预定平面之间。 光学系统将相位调制光束分成具有第二和第三光强分布和不同光学特性的至少两个光束，并且投影包括分割的两个光束的光束，投影的光强度分布 光束彼此组合，使得投影光束在预定平面上具有反向峰值形状的第四光强分布并进入预定平面。 第一至第四光强分布在预定平面上彼此不同。
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公开(公告)号：US20070006796A1
公开(公告)日：2007-01-11
申请号：US11520751
申请日：2006-09-14
CPC分类号： C30B1/02 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.
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65.发明申请公开(公告)号：US20060027162A1
公开(公告)日：2006-02-09
申请号：US11098647
申请日：2005-04-05
申请人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
发明人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
CPC分类号： C30B1/00 , C30B13/24 , Y10T117/1004
摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.
摘要翻译： 本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域 并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。 相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在 第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。
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66.发明授权公开(公告)号：US07776151B2
公开(公告)日：2010-08-17
申请号：US11866577
申请日：2007-10-03
IPC分类号： C30B1/02
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/073 , G02B27/0927 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/66757
摘要： A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value α (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2≦value α≦0.8.
摘要翻译： 一种结晶化方法，其通过用具有光强度分布的光束照射多晶半导体膜和非晶半导体膜中的至少一种而产生结晶化半导体膜，所述光束具有从反向峰值向周边增加的光强度的逆峰值图案 光强度最小的光强度值，其中当具有反峰值图案的光强度分布中的光强度的最大值被标准化为1时，反向峰值中的光强度值α（标准化值）被设置为0.2＆lt; nlE; 值α＆nlE; 0.8。
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公开(公告)号：US07608148B2
公开(公告)日：2009-10-27
申请号：US11520751
申请日：2006-09-14
IPC分类号： C30B1/02
CPC分类号： C30B1/02 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.
摘要翻译： 结晶装置包括：照射具有相移部分的移相器的照明系统，并且在点区域中照射具有预定光强度分布的光束的多晶半导体膜或非晶半导体膜，其中光强度最小 对应于移相器的相移部分，从而形成结晶化的半导体膜，移相器具有在构成相移部分的点处相交的四个或更多个偶数相移线。 每个相移线的一侧的区域和另一侧的区域具有大约180度的相位差。
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68.发明申请公开(公告)号：US20090134394A1
公开(公告)日：2009-05-28
申请号：US12277732
申请日：2008-11-25
申请人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
发明人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/02381 , H01L21/02686 , H01L27/1296 , H01L29/04
摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.
摘要翻译： 晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。 结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。
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公开(公告)号：US07217319B2
公开(公告)日：2007-05-15
申请号：US10724261
申请日：2003-12-01
IPC分类号： C30B1/06
CPC分类号： C30B1/02 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.
摘要翻译： 结晶装置包括：照射具有相移部分的移相器的照明系统，并且在点区域中照射具有预定光强度分布的光束的多晶半导体膜或非晶半导体膜，其中光强度最小 对应于移相器的相移部分，从而形成结晶化的半导体膜，移相器具有在构成相移部分的点处相交的四个或更多个偶数相移线。 每个相移线的一侧的区域和另一侧的区域具有大约180度的相位差。
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公开(公告)号：US07172841B2
公开(公告)日：2007-02-06
申请号：US10734248
申请日：2003-12-15
IPC分类号： G03F1/00
CPC分类号： H01L21/02686 , B23K26/066 , B23K2101/40 , H01L21/02532 , H01L21/02678
摘要： A phase shift mask is arranged before a laser device through a beam expander, a homogenizer and a mirror, and a processed substrate is set on an opposed surface of the phase shift mask with an image forming optical system therebetween. The processed substrate is held at a predetermined position by using a substrate chuck such as a vacuum chuck or an electrostatic chuck.
摘要翻译： 相移掩模通过光束扩展器，均化器和反射镜布置在激光装置之前，并且处理后的基板被设置在相移掩模的相对表面上，其间具有成像光学系统。 通过使用诸如真空卡盘或静电卡盘的基板卡盘将经处理的基板保持在预定位置。
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