公开(公告)号：US20110242874A1

公开(公告)日：2011-10-06

申请号：US12753316

申请日：2010-04-02

申请人： Wei-Chih Chien ,  Yi-Chou Chen ,  Feng-Ming Lee

发明人： Wei-Chih Chien ,  Yi-Chou Chen ,  Feng-Ming Lee

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/004 ,  G11C11/5614 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/71 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146

摘要： A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance.

摘要翻译： 提供了一种用于控制电阻性存储器的操作的电阻性存储器和方法。 电阻性存储器具有第一存储器层，第二存储器层和介质层。 第一存储器层和第二存储器层中的每一个用于存储数据。 介质层形成在第一存储层和第二存储层之间。 该方法至少包括测量第一存储层和第二存储层之间的电阻的步骤，以及根据测得的电阻确定第一状态，第二状态和第三状态中的哪一种是电阻性存储器的状态 。

公开(公告)号：US07875873B2

公开(公告)日：2011-01-25

申请号：US12336497

申请日：2008-12-16

申请人： Yi-Chou Chen ,  Frances Anne Houle ,  Simone Raoux ,  Charles Rettner ,  Alejandro Gabriel Schrott

发明人： Yi-Chou Chen ,  Frances Anne Houle ,  Simone Raoux ,  Charles Rettner ,  Alejandro Gabriel Schrott

IPC分类号： H01L45/00

CPC分类号： G11B7/2433 ,  G11B7/00454 ,  G11B7/2437 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/24322 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625

摘要： A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

摘要翻译： 存储器件利用相变材料作为存储介质。 相变材料包括Ge，Sb，Te，Se，As和S中的至少一种，以及作为掺杂剂的氮化物化合物。 存储器件可以是具有与相变介质电连通的电极的固态存储单元，其中以光学方式读取和写入数据的光学相变存储装置，或者基于扫描探针显微镜原理的存储装置。

公开(公告)号：US20100177559A1

公开(公告)日：2010-07-15

申请号：US12352534

申请日：2009-01-12

申请人： Yi-Chou Chen

发明人： Yi-Chou Chen

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/79

摘要： Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a bias arrangement to a memory cell to change the resistance state from a higher resistance state to a lower resistance state. The bias arrangement comprises a first voltage pulse and a second voltage pulse across the phase change memory element, the second voltage pulse having a voltage polarity different from that of the first voltage pulse.

摘要翻译： 这里描述了用于操作这样的设备的存储器件和方法。 本文所述的方法包括将偏置装置应用于存储单元以将电阻状态从较高电阻状态改变为较低电阻状态。 偏置装置包括跨相变存储元件的第一电压脉冲和第二电压脉冲，第二电压脉冲的电压极性与第一电压脉冲的极性不同。

公开(公告)号：US07501648B2

公开(公告)日：2009-03-10

申请号：US11465077

申请日：2006-08-16

申请人： Yi-Chou Chen ,  Frances Anne Houle ,  Simone Raoux ,  Charles Thomas Rettner ,  Alejandro Gabriel Schrott

发明人： Yi-Chou Chen ,  Frances Anne Houle ,  Simone Raoux ,  Charles Thomas Rettner ,  Alejandro Gabriel Schrott

IPC分类号： H01L47/00

CPC分类号： G11B7/2433 ,  G11B7/00454 ,  G11B7/2437 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/24322 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625

摘要： A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

摘要翻译： 存储器件利用相变材料作为存储介质。 相变材料包括Ge，Sb，Te，Se，As和S中的至少一种，以及作为掺杂剂的氮化物化合物。 存储器件可以是具有与相变介质电连通的电极的固态存储单元，其中以光学方式读取和写入数据的光学相变存储装置，或者基于扫描探针显微镜原理的存储装置。

公开(公告)号：US08378328B2

公开(公告)日：2013-02-19

申请号：US12036215

申请日：2008-02-22

申请人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Yi-Chou Chen ,  Chung H. Lam ,  Simone Raoux

发明人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Yi-Chou Chen ,  Chung H. Lam ,  Simone Raoux

IPC分类号： H01L29/02 ,  H01L47/00

CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/14

摘要： A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current flows from the first electrode to the single element phase change thin film layer, and through to the second electrode. The single element phase change thin film layer includes a single element phase change material. The single element phase change thin film layer can be less than 5 nanometers thick. The temperature of crystallization of the single element phase change material can be controlled by its thickness. In one embodiment, the single element phase change thin film layer is configured to be amorphous at room temperature (25 degrees Celsius). In one embodiment, the single element phase change thin film layer is comprised of Antimony (Sb).

摘要翻译： 具有单个元件相变薄膜层的相变存储单元; 以及耦合到单个元件相变薄膜层的第一电极和第二电极。 A电流从第一电极流向单一元件相变薄膜层，并通过第二电极。 单元相变薄膜层包括单一元素相变材料。 单相相变薄膜层可以小于5纳米厚。 单元相变材料的结晶温度可以通过其厚度来控制。 在一个实施例中，单个元件相变薄膜层被配置为在室温（25摄氏度）下是无定形的。 在一个实施例中，单元相变薄膜层由锑（Sb）组成。

公开(公告)号：US08295075B2

公开(公告)日：2012-10-23

申请号：US12753316

申请日：2010-04-02

申请人： Wei-Chih Chien ,  Yi-Chou Chen ,  Feng-Ming Lee

发明人： Wei-Chih Chien ,  Yi-Chou Chen ,  Feng-Ming Lee

IPC分类号： G11C11/00

CPC分类号： G11C13/004 ,  G11C11/5614 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/71 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146

摘要： A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance.

摘要翻译： 提供了一种用于控制电阻性存储器的操作的电阻性存储器和方法。 电阻性存储器具有第一存储器层，第二存储器层和介质层。 第一存储器层和第二存储器层中的每一个用于存储数据。 介质层形成在第一存储层和第二存储层之间。 该方法至少包括测量第一存储层和第二存储层之间的电阻的步骤，以及根据测得的电阻确定第一状态，第二状态和第三状态中的哪一种是电阻性存储器的状态 。

公开(公告)号：US08180942B2

公开(公告)日：2012-05-15

申请号：US12358975

申请日：2009-01-23

申请人： Yi-Chou Chen

发明人： Yi-Chou Chen

IPC分类号： G06F13/14 ,  G09G5/39 ,  G09G5/36 ,  G09G5/00

CPC分类号： G09G5/001 ,  G09G5/14 ,  G09G2360/06

摘要： An arbitration device receives a plurality of requests from a plurality of circuits, and grants access to one of the plurality of circuits. The arbitration device includes a sorter and an arbitrator. The sorter receives position information of an image signal including a plurality of image layers, and determines an access priority including a first group and a second group according to the position information. The arbitrator receives the access priority and at least one of the plurality of requests, and grants the access to one of the plurality of circuits according to the access priority and the at least one of the plurality of requests. In addition, each of the plurality of circuits generates data for each of the image layers correspondingly.

摘要翻译： 仲裁装置从多个电路接收多个请求，并且允许对多个电路之一的接入。 仲裁装置包括分拣机和仲裁员。 分类器接收包括多个图像层的图像信号的位置信息，并且根据位置信息确定包括第一组和第二组的访问优先级。 所述仲裁器接收所述接入优先级和所述多个请求中的至少一个请求，并且根据所述接入优先级和所述多个请求中的所述至少一个来授权对所述多个电路之一的接入。 此外，多个电路中的每一个相应地产生每个图像层的数据。

公开(公告)号：US20110180775A1

公开(公告)日：2011-07-28

申请号：US12692861

申请日：2010-01-25

申请人： Yuyu LIN ,  Feng-Ming Lee ,  Yi-Chou Chen

发明人： Yuyu LIN ,  Feng-Ming Lee ,  Yi-Chou Chen

IPC分类号： H01L45/00 ,  H01L29/18 ,  H01L21/06

CPC分类号： H01L45/085 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145

摘要： A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough; an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer; a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and a second electrode electrically coupled to the ion-supplying layer. Circuitry is coupled to the device to apply bias voltages to the first and second electrodes to induce creation and destruction of conducting bridges including the first metal element in the memory layer. The ion buffer layer can improve retention of the conducting bridge by reducing the likelihood that the first metallic element will be absorbed into the ion supplying layer.

摘要翻译： 可编程金属化器件，包括第一电极; 存储层，其电耦合到所述第一电极并适于通过其导电桥的电解形成和破坏; 离子供给层，其含有能够扩散到所述存储层中的第一金属元素的离子源; 在离子供给层和存储层之间的导电离子缓冲层，并且允许所述离子的扩散; 以及电耦合到所述离子供应层的第二电极。 电路耦合到器件以向第一和第二电极施加偏置电压，以引起包括存储器层中的第一金属元件的导电桥的产生和破坏。 离子缓冲层可以通过降低第一金属元素被吸收到离子供给层中的可能性来改善导电桥的保留。

公开(公告)号：US06850432B2

公开(公告)日：2005-02-01

申请号：US10223975

申请日：2002-08-20

申请人： Chih-Yuan Lu ,  Yi-Chou Chen

发明人： Chih-Yuan Lu ,  Yi-Chou Chen

IPC分类号： G11C16/02 ,  G11C16/10 ,  G11C16/18 ,  G11C11/00

CPC分类号： G11C13/0004 ,  G11C13/04 ,  G11C16/18 ,  G11C2213/72

摘要： Roughly described, a phase-change memory such as a chalcogenide-based memory is programmed optically and read electrically. No complex electrical circuits are required for programming the cells. On the other hand, this memory can be read by electrical circuitry directly. The read out speed is much faster than for optical disks, and integrated circuit chips made this way are more compatible with other electrical circuits than are optical disks. Thus memories according to the invention can have simple, low power-consuming, electrical circuits, and do not require slow and power-hungry disk drives for reading. The invention therefore provides a unique low power, fast read/write memory with simple electrical circuits.

摘要翻译： 粗略地描述，诸如基于硫族化物的存储器之类的相变存储器被光学地编程并且被电读取。 编程电池不需要复杂的电路。 另一方面，该存储器可以直接由电路读取。 读出速度比光盘快得多，而采用这种方式制成的集成电路芯片与其他电路比光盘更为兼容。 因此，根据本发明的存储器可以具有简单的，低功耗的电路，并且不需要用于读取的缓慢且耗电的磁盘驱动器。 因此，本发明提供了具有简单电路的独特的低功率，快速读/写存储器。

公开(公告)号：US10360552B2

公开(公告)日：2019-07-23

申请号：US14837601

申请日：2015-08-27

申请人： Yi-Chou Chen

发明人： Yi-Chou Chen

IPC分类号： G06Q20/10 ,  G06Q20/04 ,  G06Q20/32 ,  G06Q30/06

摘要： An implementing method of mobile group-buying system includes a buying group set-up step; a group-buying information creating step; a group-buying information transmitting step; and a group-buying information recording step. The mobile group-buying system is configured to allow at least two mobile communication devices to form a group-buying group, wherein each of the mobile communication devices is individually installed a group-buying APP. Further, initiator of each group-buying group can create group-buying information through the APP, and the group-buying information is issued to each participant of the buying group. Furthermore, when the buying group is established, the invitation of new attendants from any of the group participants to join the group of the same serial number is not accepted. Thus, the present disclosure not only can enhance participation rate of group-buying but also ensure the initiator and the participants in the buying group are in a first layer.