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公开(公告)号：US20200283290A1
公开(公告)日：2020-09-10
申请号：US16774810
申请日：2020-01-28
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen
Abstract: A sensor includes a membrane electrode, a counter-electrode, and at least one spring. The sensor can include a structure; a membrane electrode, which is deformable as a consequence of pressure and which is in contact with the structure; a counter-electrode mechanically connected to the structure and separated from the membrane electrode by a gap; and at least one spring mechanically connected to the membrane electrode and the counter-electrode, so as to exert an elastic force between the membrane electrode and the counter-electrode.
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公开(公告)号：US10602290B2
公开(公告)日：2020-03-24
申请号：US16200072
申请日：2018-11-26
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen
Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.
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公开(公告)号：US10469958B2
公开(公告)日：2019-11-05
申请号：US15915858
申请日：2018-03-08
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen
IPC: H04R19/04 , H04R7/06 , H04R19/00 , H04R7/04 , H04R7/16 , B81B3/00 , B81C1/00 , H04R1/04 , H04R31/00
Abstract: An MEMS sound transducer comprises a first and a second backplate, as well as a diaphragm, which is arranged between the first and the second backplate and is held by an edge fastening between the first and the second backplate. The MEMS sound transducer comprises a clamping structure, which is configured to provide fixing for the diaphragm when an electrostatic force acting in an operating state is applied between the first and the second backplate and at a distance from the edge fastening, and to release the fixing in absence of the electrostatic force.
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64.发明申请公开(公告)号：US20180262844A1
公开(公告)日：2018-09-13
申请号：US15915858
申请日：2018-03-08
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen
CPC classification number: H04R19/04 , B81B3/0051 , B81B3/0054 , B81B2201/0257 , B81B2203/0127 , B81B2203/053 , B81C1/00158 , H04R1/04 , H04R7/04 , H04R7/06 , H04R7/16 , H04R19/005 , H04R31/006 , H04R2201/003 , H04R2410/03
Abstract: An MEMS sound transducer comprises a first and a second backplate, as well as a diaphragm, which is arranged between the first and the second backplate and is held by an edge fastening between the first and the second backplate. The MEMS sound transducer comprises a clamping structure, which is configured to provide fixing for the diaphragm when an electrostatic force acting in an operating state is applied between the first and the second backplate and at a distance from the edge fastening, and to release the fixing in absence of the electrostatic force.
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公开(公告)号：US20180103325A1
公开(公告)日：2018-04-12
申请号：US15839546
申请日：2017-12-12
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Marc Fueldner
CPC classification number: H04R19/04 , H04R7/00 , H04R19/005 , H04R31/00 , H04R31/003 , H04R31/006 , Y10T29/49005
Abstract: For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. Counter electrode material is applied to the counter electrode support material and membrane carrier material and membrane support material are removed in the sound transducing region to the membrane material.
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Patent Agency Ranking
公开(公告)号：US20180035206A1
公开(公告)日：2018-02-01
申请号：US15728045
申请日：2017-10-09
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen
CPC classification number: H04R3/06 , H04R19/005 , H04R29/001 , H04R2201/003
Abstract: According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. Adjusting the carrier signal includes performing adjustments to the carrier signal at the second frequency. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.
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公开(公告)号：US09875934B2
公开(公告)日：2018-01-23
申请号：US15055246
申请日：2016-02-26
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen
IPC: H01L21/768 , H01L23/48 , H01L21/24
CPC classification number: H01L21/76898 , H01L21/24 , H01L21/76838 , H01L23/481
Abstract: A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.
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公开(公告)号：US09540226B2
公开(公告)日：2017-01-10
申请号：US14717556
申请日：2015-05-20
Applicant: Infineon Technologies AG
Inventor： Wolfgang Klein , Martin Wurzer , Stefan Barzen , Alfons Dehe
CPC classification number: B81B3/007 , B81B2201/0257 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81B2203/0353 , B81C1/00658 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003
Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.
Abstract translation: 根据实施例，微机电系统（MEMS）换能器包括第一电极，固定到第二电极的周边处的锚固件的第二电极以及与第二电极的周边处的锚固件分离的机械支撑件，并机械连接 到第一电极和第二电极。 机械支撑件固定到第二电极的一部分，使得在操作期间，第二电极的最大偏转发生在机械结构和第二电极的周边之间。
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公开(公告)号：US20160087606A1
公开(公告)日：2016-03-24
申请号：US14961186
申请日：2015-12-07
Applicant: Infineon Technologies AG
Inventor： Christian Herzum , Martin Wurzer , Roland Helm , Michael Kropfitsch , Stefan Barzen
CPC classification number: H03K3/01 , B81C1/0023 , B81C99/0045 , H01L2924/16151 , H01L2924/16152 , H03G3/3005 , H04R19/005 , H04R19/04 , H04R29/006 , H04R2201/003
Abstract: A packaged MEMS device and a method of calibrating a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device comprises a carrier, a MEMS device disposed on the substrate, a signal processing device disposed on the carrier, a validation circuit disposed on the carrier; and an encapsulation disposed on the carrier, wherein the encapsulation encapsulates the MEMS device, the signal processing device and the memory element.
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公开(公告)号：US20150321901A1
公开(公告)日：2015-11-12
申请号：US14798112
申请日：2015-07-13
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Carsten Ahrens , Stefan Barzen , Wolfgang Friza
IPC: B81B3/00
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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