公开(公告)号：US20180040691A1

公开(公告)日：2018-02-08

申请号：US15665905

申请日：2017-08-01

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Hans-Joachim Schulze ,  Holger Schulze ,  Werner Schustereder

IPC: H01L29/06 ,  H01L21/268 ,  H01L29/08 ,  H01L29/167 ,  H01L29/861 ,  H01L29/739 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/0638 ,  H01L21/2652 ,  H01L21/268 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/861 ,  H01L29/8611

Abstract: Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.

公开(公告)号：US20180019306A1

公开(公告)日：2018-01-18

申请号：US15718189

申请日：2017-09-28

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Michael Stadtmueller

IPC: H01L29/06 ,  H01L29/739 ,  H01L21/324 ,  H01L21/8234 ,  H01L21/66

CPC classification number: H01L29/0692 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/8234 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/0878 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7802 ,  H01L29/8611

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

公开(公告)号：US09825131B2

公开(公告)日：2017-11-21

申请号：US15146459

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Michael Stadtmueller

IPC: H01L21/00 ,  H01L29/06 ,  H01L21/324 ,  H01L21/8234 ,  H01L29/739

CPC classification number: H01L29/0692 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/8234 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/8611

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

公开(公告)号：US20170162390A1

公开(公告)日：2017-06-08

申请号：US15365627

申请日：2016-11-30

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Jens Peter Konrath ,  Francisco Javier Santos Rodriguez ,  Carsten Schaeffer ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Guenther Wellenzohn

IPC: H01L21/04 ,  H01L29/47

CPC classification number: H01L29/401 ,  H01L21/02697 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/2258 ,  H01L21/28575 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/45 ,  H01L29/452 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872

Abstract: Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. The annealing includes heating at least the metal atom containing region to a temperature of less than 500° C.

公开(公告)号：US20250014902A1

公开(公告)日：2025-01-09

申请号：US18754277

申请日：2024-06-26

Applicant: Infineon Technologies AG

Inventor： Axel König ,  Kristijan Luka Mletschnig ,  Andreas Vörckel ,  Caspar Leendertz ,  Werner Schustereder ,  Hans-Joachim Schulze

IPC: H01L21/04 ,  H01L21/02 ,  H01L21/324

Abstract: A method of manufacturing a semiconductor device includes forming a doped region in a semiconductor body. Forming the doped region includes: introducing first dopants through a first surface of the semiconductor body at a first vertical reference level by a first ion implantation process; thereafter, applying a first heat treatment to the semiconductor body; and thereafter, introducing second dopants through the first surface of the semiconductor body at the first vertical reference level by a second ion implantation process. An atomic number of the first dopants is equal to an atomic number of the second dopants. An ion implantation energy of the second ion implantation process differs by less than 20% from an ion implantation energy of the first ion implantation process. An ion implantation dose of the second ion implantation process differs by less than 20% from an ion implantation dose of the first ion implantation process.

公开(公告)号：US20230317456A1

公开(公告)日：2023-10-05

申请号：US18127732

申请日：2023-03-29

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Daniel Schlögl ,  Francisco Javier Santos Rodriguez

IPC: H01L21/265 ,  H01L21/04 ,  H01L21/268 ,  H01L29/20 ,  H01L21/78 ,  H01L21/768

CPC classification number: H01L21/265 ,  H01L21/046 ,  H01L21/268 ,  H01L29/20 ,  H01L21/78 ,  H01L21/76838

Abstract: A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. Semiconductor device elements are formed in the semiconductor body by processing the semiconductor body at the first surface. A wiring area is formed over the first surface of the semiconductor body. The semiconductor body is attached to a carrier via the wiring area. Thereafter, ions are implanted through the second surface into the semiconductor body. The ions are ions of a doping element, or ions, which induce doping by complex formation, or ions of a heavy metal. A surface region of the semiconductor body at the second surface is irradiated with a plurality of laser pulses. Thereafter, the carrier is removed from the semiconductor body.

公开(公告)号：US11552172B2

公开(公告)日：2023-01-10

申请号：US16926695

申请日：2020-07-11

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Romain Esteve ,  Moriz Jelinek ,  Anton Mauder ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/40 ,  H01L29/08 ,  H01L21/04 ,  H01L29/872 ,  H01L29/739 ,  H01L29/04

Abstract: First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.

公开(公告)号：US10998402B2

公开(公告)日：2021-05-04

申请号：US16548025

申请日：2019-08-22

Applicant: Infineon Technologies AG

Inventor： Alexander Breymesser ,  Hans-Joachim Schulze ,  Holger Schulze ,  Werner Schustereder

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/36 ,  H01L21/268 ,  H01L21/324 ,  H01L29/08 ,  H01L29/167 ,  H01L29/739 ,  H01L21/265

Abstract: Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.

公开(公告)号：US10573533B2

公开(公告)日：2020-02-25

申请号：US16116210

申请日：2018-08-29

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Irmgard Escher-Poeppel ,  Stephanie Fassl ,  Paul Ganitzer ,  Gerhard Poeppel ,  Werner Schustereder ,  Harald Wiedenhofer

IPC: H01L21/324 ,  H01L23/31 ,  H01L21/268 ,  H01L21/04 ,  H01L21/225 ,  H01L21/285

Abstract: Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.

公开(公告)号：US20190066977A1

公开(公告)日：2019-02-28

申请号：US16112178

申请日：2018-08-24

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Brugger ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Peter Zupan

IPC: H01J37/317 ,  H01J37/304 ,  H01L21/04 ,  H01L29/16

Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.