公开(公告)号：US20170154825A1

公开(公告)日：2017-06-01

申请号：US15290410

申请日：2016-10-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Lisa F. Edge ,  Hemanth Jagannathan ,  Paul C. Jamison ,  Vamsi K. Paruchuri

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L27/12 ,  H01L21/84 ,  H01L27/092 ,  H01L29/49

CPC分类号： H01L21/823842 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/786

摘要： An electrical device that includes a p-type semiconductor device having a p-type work function gate structure including a first high-k gate dielectric, a first metal containing buffer layer, a first titanium nitride layer having a first thickness present on the metal containing buffer layer, and a first gate conductor contact. A mid gap semiconductor device having a mid gap gate structure including a second high-k gate dielectric, a second metal containing buffer layer, a second titanium nitride layer having a second thickness that is less than the first thickness present, and a second gate conductor contact. An n-type semiconductor device having an n-type work function gate structure including a third high-k gate dielectric present on a channel region of the n-type semiconductor device, a third metal containing buffer layer on the third high-k gate dielectric and a third gate conductor fill present atop the third metal containing buffer layer.

公开(公告)号：US09385207B2

公开(公告)日：2016-07-05

申请号：US14614824

申请日：2015-02-05

申请人： International Business Machines Corporation

发明人： Hemanth Jagannathan ,  Paul C. Jamison

IPC分类号： H01L21/3205 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28

CPC分类号： H01L21/283 ,  H01L21/28158 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7833 ,  H01L29/785

摘要： A stratified gate dielectric stack includes a first high dielectric constant (high-k) gate dielectric comprising a first high-k dielectric material, a band-gap-disrupting dielectric comprising a dielectric material having a different band gap than the first high-k dielectric material, and a second high-k gate dielectric comprising a second high-k dielectric material. The band-gap-disrupting dielectric includes at least one contiguous atomic layer of the dielectric material. Thus, the stratified gate dielectric stack includes a first atomic interface between the first high-k gate dielectric and the band-gap-disrupting dielectric, and a second atomic interface between the second high-k gate dielectric and the band-gap-disrupting dielectric that is spaced from the first atomic interface by at least one continuous atomic layer of the dielectric material of the band-gap-disrupting dielectric. The insertion of the band-gap disrupting dielectric results in lower gate leakage without resulting in any substantial changes in the threshold voltage characteristics and effective oxide thickness.

公开(公告)号：US20150171182A1

公开(公告)日：2015-06-18

申请号：US14614824

申请日：2015-02-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Hemanth Jagannathan ,  Paul C. Jamison

IPC分类号： H01L29/51 ,  H01L21/28

CPC分类号： H01L21/283 ,  H01L21/28158 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7833 ,  H01L29/785

摘要： A stratified gate dielectric stack includes a first high dielectric constant (high-k) gate dielectric comprising a first high-k dielectric material, a band-gap-disrupting dielectric comprising a dielectric material having a different band gap than the first high-k dielectric material, and a second high-k gate dielectric comprising a second high-k dielectric material. The band-gap-disrupting dielectric includes at least one contiguous atomic layer of the dielectric material. Thus, the stratified gate dielectric stack includes a first atomic interface between the first high-k gate dielectric and the band-gap-disrupting dielectric, and a second atomic interface between the second high-k gate dielectric and the band-gap-disrupting dielectric that is spaced from the first atomic interface by at least one continuous atomic layer of the dielectric material of the band-gap-disrupting dielectric. The insertion of the band-gap disrupting dielectric results in lower gate leakage without resulting in any substantial changes in the threshold voltage characteristics and effective oxide thickness.

摘要翻译： 分层栅极电介质堆叠包括第一高介电常数（high-k）栅极电介质，其包括第一高k电介质材料，带隙破坏电介质，其包含具有与第一高k电介质不同带隙的电介质材料 材料和包含第二高k电介质材料的第二高k栅极电介质。 带隙破坏电介质包括介电材料的至少一个连续的原子层。 因此，分层栅极电介质堆叠包括第一高k栅极电介质和带隙破坏电介质之间的第一原子界面，以及第二高k栅极电介质和带隙破坏电介质之间的第二原子界面 其与带隙破坏电介质的电介质材料的至少一个连续原子层与第一原子界面间隔开。 带隙干扰介质的插入导致较低的栅极泄漏，而不会导致阈值电压特性和有效氧化物厚度的任何实质性变化。

公开(公告)号：US20140264387A1

公开(公告)日：2014-09-18

申请号：US14294319

申请日：2014-06-03

申请人： International Business Machines Corporation

发明人： Alexander Reznicek ,  Thomas N. Adam ,  Kangguo Cheng ,  Paul C. Jamison ,  Ali Khakifirooz

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fin field effect transistor including a plurality of fin structures on a substrate, and a shared gate structure on a channel portion of the plurality of fin structures. The fin field effect transistor further includes an epitaxial semiconductor material having a first portion between adjacent fin structures in the plurality of fin structures and a second portion present on outermost sidewalls of end fin structures of the plurality of fin structures. The epitaxial semiconductor material provides a source region and at drain region to each fin structure of the plurality of fin structures. A nitride containing spacer is present on the outermost sidewalls of the second portion of the epitaxial semiconductor material.

摘要翻译： 一种鳍状场效应晶体管，包括在衬底上的多个翅片结构，以及在所述多个翅片结构的通道部分上的共享栅极结构。 鳍状场效应晶体管还包括外延半导体材料，该外延半导体材料具有在多个翅片结构中的相邻鳍结构之间的第一部分和存在于多个翅片结构的端鳍结构的最外侧壁上的第二部分。 外延半导体材料在多个鳍结构的每个鳍结构处提供源极区域和漏极区域。 含氮化物的间隔物存在于外延半导体材料的第二部分的最外侧壁上。