公开(公告)号：US20150311883A1

公开(公告)日：2015-10-29

申请号：US14264937

申请日：2014-04-29

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski

IPC: H03J5/24

CPC classification number: H03J5/244 ,  H03H11/28 ,  H03J2200/10 ,  H03K17/687

Abstract: In accordance with an embodiment, a switchable capacitance circuit includes a plurality of capacitance-switch cells that each have a capacitance circuit having a capacitance between a first terminal and a second terminal of the capacitance circuit, and a semiconductor switching circuit including a first terminal coupled to the first terminal of the capacitance circuit, a plurality of series connected radio-frequency (RF) switch cells having a load path and a common node. Each of the plurality of series connected RF switch cells has a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the common node. The switchable capacitance circuit also includes a resistance circuit having a first end coupled to the common node and a second end coupled to a control node.

Abstract translation: 根据实施例，可切换电容电路包括多个电容开关单元，每个电容开关单元具有在电容电路的第一端子和第二端子之间具有电容的电容电路，以及半导体开关电路，包括：第一端子耦合 连接到电容电路的第一端子，具有负载路径和公共节点的多个串联连接的射频（RF）开关单元。 多个串联连接的RF开关单元中的每一个具有开关晶体管和栅极电阻器，其具有耦合到开关晶体管的栅极的第一端和耦合到公共节点的第二端。 可切换电容电路还包括具有耦合到公共节点的第一端和耦合到控制节点的第二端的电阻电路。

公开(公告)号：US20150008972A1

公开(公告)日：2015-01-08

申请号：US13937075

申请日：2013-07-08

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Nikolay Ilkov ,  Werner Simbuerger

IPC: H03K17/042

CPC classification number: H03K17/04206

Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.

Abstract translation: 电路包括具有第一端子，第二端子和控制端子的开关元件。 电路还包括耦合在控制终端和交换节点之间的阻抗网络。 电路还包括耦合在控制终端和第一节点之间的第一加速元件。 第一个节点与交换节点不同。 该电路被配置为当切换元件的切换状态被改变时临时激活第一加速元件。

公开(公告)号：US20140375514A1

公开(公告)日：2014-12-25

申请号：US13922080

申请日：2013-06-19

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski

IPC: H01Q3/22

CPC classification number: H01Q5/314 ,  H01Q9/0421

Abstract: An antenna tuning circuit is provided. The antenna tuning circuit includes an antenna, an inductor and a variable capacitance. The antenna includes a first terminal, which serves as a feed terminal, and a second terminal, which is separate from the first terminal. The inductor and the variable capacitance are coupled to the second terminal, to tune the antenna.

Abstract translation: 提供天线调谐电路。 天线调谐电路包括天线，电感器和可变电容。 天线包括用作馈电端子的第一端子和与第一端子分开的第二端子。 电感器和可变电容耦合到第二端子，以调谐天线。

公开(公告)号：US10931275B2

公开(公告)日：2021-02-23

申请号：US16872829

申请日：2020-05-12

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/00 ,  H03K17/16 ,  H03K17/56 ,  G05F1/10

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US10680599B1

公开(公告)日：2020-06-09

申请号：US16374139

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/56 ,  G05F1/10 ,  H03K17/16

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US20200028504A1

公开(公告)日：2020-01-23

申请号：US16506343

申请日：2019-07-09

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Carsten Ahrens ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher

IPC: H03K17/06

Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.

公开(公告)号：US20190245533A1

公开(公告)日：2019-08-08

申请号：US16264186

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Bernd Schleicher ,  Winfried Bakalski ,  Ruediger Bauder ,  Valentyn Solomko

IPC: H03K17/16 ,  H03K17/687

CPC classification number: H03K17/161 ,  H03K17/6871 ,  H03K17/693

Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, a transistor including a first current node coupled to a first load resistor, a second current node coupled to ground, and a control node coupled to an internal switch node, and a filter having an input coupled to the first current node of the first transistor and an output for providing a DC voltage corresponding to the RF power present at the internal switch node.

公开(公告)号：US10333510B2

公开(公告)日：2019-06-25

申请号：US15644435

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher ,  Anton Steltenpohl ,  Hans Taddiken ,  Danial Tayari

IPC: H03K17/16

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

公开(公告)号：US10288669B2

公开(公告)日：2019-05-14

申请号：US15427939

申请日：2017-02-08

Applicant: Infineon Technologies AG

Inventor： Nikolay Ilkov ,  Winfried Bakalski

IPC: G01R31/26 ,  G01R31/28

Abstract: In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.

公开(公告)号：US10156864B2

公开(公告)日：2018-12-18

申请号：US15679263

申请日：2017-08-17

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Werner Simbuerger ,  Anton Steltenpohl ,  Hans Taddiken

IPC: H01L27/00 ,  G05F3/20 ,  H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H03G1/00

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.