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公开(公告)号:US10355070B2
公开(公告)日:2019-07-16
申请号:US15966202
申请日:2018-04-30
摘要: Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a first laminated stack. The first laminated stack includes layers of an insulating material alternating with layers of a first magnetic material. The inductor structure includes a laminated second stack formed on the first laminated stack. The second laminated stack includes layers of the insulating material alternating with layers of a second magnetic material. The second magnetic material has a greater permeability than does the first magnetic material.
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62.
公开(公告)号:US20190198243A1
公开(公告)日:2019-06-27
申请号:US16291795
申请日:2019-03-04
CPC分类号: H01F17/04 , H01F17/0033 , H01F41/14 , H01F41/34 , H01F2017/0066
摘要: A magnetic material stack comprises a first dielectric layer, a first magnetic material layer on the first dielectric layer, at least a second dielectric layer on the first magnetic material layer and at least a second magnetic material layer on the second dielectric layer. One or more surfaces of the layers are smoothed to remove at least a portion of surface roughness on the respective layers
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公开(公告)号:US10283249B2
公开(公告)日:2019-05-07
申请号:US15281466
申请日:2016-09-30
摘要: A method for fabricating a magnetic material stack on a substrate includes the following steps. A first dielectric layer is formed. A first magnetic material layer is formed on the first dielectric layer. At least a second dielectric layer is formed on the first magnetic material layer. At least a second magnetic material layer is formed on the second dielectric layer. During one or more of the forming steps, a surface smoothing operation is performed to remove at least a portion of surface roughness on the layer being formed. The magnetic material stack can be used to form a low magnetic loss yoke inductor.
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公开(公告)号:US10256397B2
公开(公告)日:2019-04-09
申请号:US15906480
申请日:2018-02-27
摘要: A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.
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公开(公告)号:US20180286582A1
公开(公告)日:2018-10-04
申请号:US15476147
申请日:2017-03-31
摘要: Embodiments are directed to a method of forming a laminated magnetic inductor and resulting structures having anisotropic magnetic layers. A first magnetic stack is formed having one or more magnetic layers alternating with one or more insulating layers. A trench is formed in the first magnetic stack oriented such that an axis of the trench is perpendicular to a hard axis of the magnetic inductor. The trench is filled with a dielectric material.
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公开(公告)号:US20180275093A1
公开(公告)日:2018-09-27
申请号:US15464418
申请日:2017-03-21
发明人: Bruce B. Doris , Eugene J. O'Sullivan , Sufi Zafar
IPC分类号: G01N27/414 , C12Q1/68
CPC分类号: G01N27/4145 , C12Q1/6837 , G01N27/4146 , G01N27/4148
摘要: Embodiments of the invention are directed to a sensor that includes a sensing circuit and a probe communicatively coupled to the sensing circuit. The probe includes a three-dimensional (3D) sensing surface coated with a recognition element and configured to, based at least in part on the 3D sensing surface interacting with a predetermined material, generate a first measurement. In some embodiments, the 3D sensing surface is shaped as a pyramid, a cone, or a cylinder to increase the sensing surface area over a two-dimensional (2D) sensing surface. In some embodiments, the 3D sensing surface facilitates penetration of the 3D sensing surface through the wall of the biological cell.
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公开(公告)号:US20180218824A1
公开(公告)日:2018-08-02
申请号:US15801926
申请日:2017-11-02
CPC分类号: H01F41/041 , H01F41/0206 , H01F2027/348
摘要: An inductor device includes a conductive coil formed within a dielectric material and having a central core area within the coil. Particles are dispersed within the central core region to reduce eddy current loss and increase energy storage. The particles include magnetic properties.
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公开(公告)号:US20180190901A1
公开(公告)日:2018-07-05
申请号:US15906480
申请日:2018-02-27
摘要: A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.
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公开(公告)号:US10014464B1
公开(公告)日:2018-07-03
申请号:US15446592
申请日:2017-03-01
CPC分类号: H01L43/12 , H01L27/222 , H01L43/02 , H01L43/08
摘要: A method is presented for establishing a top contact to a magnetic tunnel junction (MTJ) device, the method including selectively etching, via a first etching process, an oxide layer to expose a top surface of a nitride layer of a dummy fill shape and selectively etching, via a second etching process, a top portion of the nitride layer of the dummy fill shape to expose a top surface thereof. The method further includes selectively etching, via the second etching process, the oxide layer to expose a top surface of a nitride layer of the MTJ device, and selectively etching, via the first etching process, a top portion of the nitride layer of the MTJ device to expose a top surface thereof such that a height of the MTJ device is approximately equal to a height of the dummy fill shape.
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70.
公开(公告)号:US10002919B2
公开(公告)日:2018-06-19
申请号:US15698186
申请日:2017-09-07
发明人: Hariklia Deligianni , William J. Gallagher , Maurice Mason , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang
IPC分类号: H01L49/02 , H01F41/02 , H01F1/047 , H01L23/522 , H01L21/288 , H01L23/532
CPC分类号: H01L28/10 , H01F1/04 , H01F1/047 , H01F41/02 , H01F41/04 , H01F41/046 , H01F41/26 , H01L21/288 , H01L23/5227 , H01L23/53209 , H01L23/53242
摘要: An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
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