Maleimide-photoresist polymers containing fluorine and photoresist compositions comprising the same
    61.
    发明授权
    Maleimide-photoresist polymers containing fluorine and photoresist compositions comprising the same 失效
    含有氟的马来酰亚胺光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号:US06720129B2

    公开(公告)日:2004-04-13

    申请号:US10107659

    申请日:2002-03-27

    IPC分类号: G03P7004

    摘要: Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.

    摘要翻译: 公开了使用聚合物的光致抗蚀剂聚合物和光致抗蚀剂组合物。 更具体地,含有由式1表示的马来酰亚胺的光致抗蚀剂聚合物。包含光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性,耐热性和粘合性以及四甲基氢氧化铵(TMAH)水溶液的显影能力。 由于组合物在193nm和157nm波长处具有低吸光度,它们适用于使用诸如VUV(157nm)的紫外光源的方法,其中1,R1,R2,R3,R,R',R' ',R“',X,a和b在说明书中定义。

    Hard mask composition and method for manufacturing semiconductor device
    63.
    发明授权
    Hard mask composition and method for manufacturing semiconductor device 有权
    半导体器件的硬掩模组成和方法

    公开(公告)号:US07449538B2

    公开(公告)日:2008-11-11

    申请号:US11421897

    申请日:2006-06-02

    申请人: Geun Su Lee

    发明人: Geun Su Lee

    IPC分类号: C08G77/04

    CPC分类号: G03F7/0752 G03F7/11

    摘要: Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

    摘要翻译: 本文公开了包含硅化合物和羟基化合物的交联聚合物。 本文还公开了包含交联聚合物和有机溶剂的组合物。 该组合物可用作在制造半导体器件期间施加在下层上的硬掩模膜的一部分。 硬掩模膜在器件上形成均匀图案是有用的。

    Water-soluble negative photoresist polymer and composition containing the same
    64.
    发明授权
    Water-soluble negative photoresist polymer and composition containing the same 失效
    水溶性负性光致抗蚀剂聚合物及其组合物

    公开(公告)号:US07399570B2

    公开(公告)日:2008-07-15

    申请号:US10999416

    申请日:2005-03-31

    申请人: Geun Su Lee

    发明人: Geun Su Lee

    IPC分类号: G03F7/00 G03F7/004 G08F118/02

    CPC分类号: G03F7/0382 C08F8/44

    摘要: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

    摘要翻译: 使用包含水的光致抗蚀剂组合物,具有盐型重复单元的负性光致抗蚀剂聚合物和光致酸产生剂形成光刻胶图案,使得不能通过使用常规TMAH溶液而是通过使用水进行显影处理。 此外,由于组合物的主要溶剂是水,因此所公开的光致抗蚀剂组合物是环境友好的,并且在193nm和248nm处具有低吸光度,其在使用远紫外区域中的光源的光刻工艺中是有用的 当制造半导体器件的高集成精细电路时。

    Photoresist polymer and photoresist composition containing the same
    65.
    发明授权
    Photoresist polymer and photoresist composition containing the same 失效
    光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物

    公开(公告)号:US07338742B2

    公开(公告)日:2008-03-04

    申请号:US10876029

    申请日:2004-06-24

    申请人: Geun Su Lee

    发明人: Geun Su Lee

    IPC分类号: G03F7/039 G03F7/32

    摘要: The present invention relates to photoresist polymers and photoresist compositions. The disclosed photoresist polymers and photoresist compositions containing the same have excellent transmittance, etching resistance, thermal resistance and adhesive property, low light absorbance and high affinity to a developing solution at a wavelength of 193 nm and 157 nm, thereby improving LER (line edge roughness).

    摘要翻译: 本发明涉及光致抗蚀剂聚合物和光致抗蚀剂组合物。 所公开的光致抗蚀剂聚合物和含有该光致抗蚀剂组合物的光致抗蚀剂组合物在193nm和157nm的波长下对显影液具有优异的透光率,耐蚀刻性,耐热性和粘合性,低吸光度和高亲和性,从而提高了LER(线边缘粗糙度 )。

    Water-soluble negative photoresist polymer, composition containing the same, and method of forming a photoresist pattern
    66.
    发明授权
    Water-soluble negative photoresist polymer, composition containing the same, and method of forming a photoresist pattern 失效
    水溶性负性光致抗蚀剂聚合物,含有它们的组合物和形成光致抗蚀剂图案的方法

    公开(公告)号:US07270934B2

    公开(公告)日:2007-09-18

    申请号:US10999412

    申请日:2004-11-30

    申请人: Geun Su Lee

    发明人: Geun Su Lee

    IPC分类号: G03F7/00 G03F7/004

    CPC分类号: G03F7/0382

    摘要: Photoresist patterns are formed using a photoresist composition, which includes water, a photoacid generator, and a negative photoresist polymer. The polymer includes a basic-type repeating unit represented by Formula (I) (shown below), so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, since the main solvent of the composition is water, the disclosed photoresist composition is eco-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured. wherein R1, R2, R3, R4, R5, R6, R7, b, c, d and m are defined in the specification.

    摘要翻译: 使用光致抗蚀剂组合物形成光致抗蚀剂图案,该组合物包括水,光致酸产生剂和负性光致抗蚀剂聚合物。 聚合物包括由式(I)表示的碱式重复单元(如下所示),从而可以不使用常规TMAH溶液而是通过使用水进行显影处理。 此外,由于组合物的主要溶剂是水,因此所公开的光致抗蚀剂组合物是环保的,并且在193nm和248nm具有低吸光度,其可用于在远紫外区域中使用光源的光刻工艺 制造半导体器件的高集成精密电路。 其中R 1,R 2,R 3,R 4,R 5, R 6,R 7,b,c,d和m在说明书中定义。

    Water-soluble negative photoresist polymer and composition containing the same
    67.
    发明申请
    Water-soluble negative photoresist polymer and composition containing the same 失效
    水溶性负性光致抗蚀剂聚合物及其组合物

    公开(公告)号:US20050282080A1

    公开(公告)日:2005-12-22

    申请号:US10999416

    申请日:2005-03-31

    申请人: Geun Su Lee

    发明人: Geun Su Lee

    IPC分类号: C08F8/44 G03C1/492 G03F7/038

    CPC分类号: G03F7/0382 C08F8/44

    摘要: Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

    摘要翻译: 使用包含水的光致抗蚀剂组合物,具有盐型重复单元的负性光致抗蚀剂聚合物和光致酸产生剂形成光刻胶图案,使得不能通过使用常规TMAH溶液而是通过使用水进行显影处理。 此外,由于组合物的主要溶剂是水,因此所公开的光致抗蚀剂组合物是环境友好的,并且在193nm和248nm处具有低吸光度,其在使用远紫外区域中的光源的光刻工艺中是有用的 当制造半导体器件的高集成精细电路时。

    Top anti-reflective coating polymer, its preparation method and anti-reflective coating composition comprising the same
    68.
    发明申请
    Top anti-reflective coating polymer, its preparation method and anti-reflective coating composition comprising the same 失效
    顶级抗反射涂料聚合物,其制备方法和包含其的抗反射涂料组合物

    公开(公告)号:US20050026076A1

    公开(公告)日:2005-02-03

    申请号:US10903076

    申请日:2004-07-30

    申请人: Geun Su Lee

    发明人: Geun Su Lee

    摘要: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I which is introduced to the top portion of photoresist, its preparation method and an anti-reflective coating composition, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source. More particularly, the present invention provides an organic anti-reflective coating polymer capable of protecting a photoresist from amine to improve the stability of a post exposure delay and to minimize pattern distortion caused by a swing phenomenon during a patterning process, its preparation method and an anti-reflective coating composition comprising the same. [formula I] wherein each of m and n is an integer ranging from 5 to 5,000.

    摘要翻译: 公开了一种有机抗反射涂层聚合物,其具有由下式I表示的结构,其被引入到光致抗蚀剂的顶部,其制备方法和抗反射涂层组合物,用于形成光致抗蚀剂超细图案的工艺 用于通过使用193nm ArF或157nm VUV光源进行光刻。 更具体地说,本发明提供了一种能够保护光致抗蚀剂不受胺的有机抗反射涂层聚合物,以提高后曝光延迟的稳定性,并且使图案化过程中由摆动现象引起的图案变形最小化,其制备方法和 抗反射涂料组合物。 [式I]其中m和n各自为5至5,000的整数。

    Cleaning solution for photoresist and method for forming pattern using the same
    69.
    发明授权
    Cleaning solution for photoresist and method for forming pattern using the same 失效
    用于光致抗蚀剂的清洁溶液和使用其形成图案的方法

    公开(公告)号:US07314853B2

    公开(公告)日:2008-01-01

    申请号:US10875924

    申请日:2004-06-24

    IPC分类号: C11D1/72

    摘要: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

    摘要翻译: 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要组分的H 2 O 2,作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力,从而提高了图案的崩溃性和稳定光刻胶图形的形成。

    Organic anti-reflective coating composition and pattern forming method using the same
    70.
    发明授权
    Organic anti-reflective coating composition and pattern forming method using the same 失效
    有机防反射涂料组合物及使用其的图案形成方法

    公开(公告)号:US07132217B2

    公开(公告)日:2006-11-07

    申请号:US10891568

    申请日:2004-07-15

    IPC分类号: G03C1/825 G03F7/20 G03F7/30

    摘要: Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.

    摘要翻译: 公开了一种有机抗反射涂层组合物,其被引入到光致抗蚀剂的顶部和使用其的图案形成方法中,在用于通过使用193nm ArF或157nm VUV光形成用于光刻的光刻胶的超精细图案的工艺中 来源,更具体地涉及一种有机抗反射涂料组合物,其可以保护光致抗蚀剂免受大气胺以最小化后曝光延迟效应,并且使扩散反射(即摆动现象)引起的图案失真最小化,同时改善切口 现象和反射率的降低,以及使用其的图案形成方法。