公开(公告)号：US08557040B2

公开(公告)日：2013-10-15

申请号：US12275727

申请日：2008-11-21

Applicant: James S. Im

Inventor： James S. Im

IPC: C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC classification number: H01L21/3221 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L31/0236 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.

Abstract translation: 所公开的主题涉及使用薄膜的激光结晶来产生外延纹理的结晶厚膜。 在一个或多个实施方案中，制备厚晶体膜的方法包括在基底上提供用于结晶的膜，其中至少一部分基底对激光照射基本上是透明的，所述膜包括具有主要表面结晶学的种子层 方向; 以及设置在种子层上方的顶层; 使用脉冲激光从所述基板的背面照射所述膜，以在所述顶层的第二部分保持固体的同时在与所述种子层的界面处熔化所述顶层的第一部分; 并重新固化顶层的第一部分以形成用籽晶层外延的晶体激光，从而释放热量以熔化顶层的相邻部分。

公开(公告)号：US08476144B2

公开(公告)日：2013-07-02

申请号：US12757726

申请日：2010-04-09

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L27/00

CPC classification number: B23K26/0676 ,  B23K26/066 ,  B23K26/073 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691

Abstract: An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolidified irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts.

Abstract translation: 用于实现在样品上提供的薄膜的单扫描连续运动连续横向固化的布置，处理和掩模，使得在辐射薄膜的子束边缘处形成的伪影显着减少。 根据本发明，先前照射和重新固化的区域中可能具有伪像的边缘区域被随后的子束重叠。 以这种方式，先前重新固化的照射区域的边缘区域和其中的伪像在其整个厚度中完全熔化。 至少后续的子束被成形为使得先前照射和重新固化的区域的与随后的子束熔化的边缘区域相邻的区域的晶粒生长成这些再凝固边缘区域，以便基本上减少或消除伪影。

公开(公告)号：US20130071974A1

公开(公告)日：2013-03-21

申请号：US13592843

申请日：2012-08-23

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/324 ,  H01L21/02

CPC classification number: H01L21/02686 ,  B23K26/066 ,  H01L21/02 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1088

Abstract: High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more pulses. The beam pulses have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beam have dimensions and orientations that are conductive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the workpiece at high speeds. Position sensitive triggering of a laser can be used to generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.

Abstract translation: 提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。 用激光束照射薄膜半导体工件以熔化暴露于激光束的表面的目标区域的再结晶。 激光束成形为一个或多个脉冲。 光束脉冲具有合适的尺寸和取向以对激光束辐射进行图案，使得由光束靶向的区域具有对半导体重结晶导电的尺寸和取向。 工件相对于激光束沿着线性路径机械平移，以高速处理工件的整个表面。 可以使用激光的位置敏感触发来产生激光束脉冲，以在工件表面上的精确位置处熔融和重结晶半导体材料，同时在激光平台上平移。

公开(公告)号：US08221544B2

公开(公告)日：2012-07-17

申请号：US11293655

申请日：2005-12-02

Applicant: James S. Im ,  Paul C. Van Der Wilt

Inventor： James S. Im ,  Paul C. Van Der Wilt

IPC: C30B13/00

CPC classification number: H01L21/02686 ,  B23K26/0738 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmin; and (e) irradiating a second region of the film with a second laser pulse to form a second molten zone having a shape that is substantially the same as the shape of the first molten zone, wherein the second molten zone crystallizes upon cooling to form one or more laterally grown crystals that are elongations of the one or more crystals in the first region.

Abstract translation: 通过（a）提供具有设置在其上的薄膜的基板，所述膜能够进行激光诱导熔化，（b）产生具有足以使膜在整个厚度上熔化的能量密度的激光脉冲序列来制备多晶膜 在照射区域中，每个脉冲形成具有预定长度和宽度的线束，所述宽度足以防止由激光脉冲照射的薄膜部分中的固体成核，（c）照射第一区域 具有第一激光脉冲以形成第一熔融区的第一熔融区，所述第一熔融区表现出沿其长度的宽度变化，从而限定最大宽度（Wmax）和最小宽度（Wmin），其中第一熔融区在冷却时结晶 以形成一个或多个横向生长的晶体，（d）沿横向生长方向横向移动所述膜的距离大于约一半Wmax且小于Wmin; 和（e）用第二激光脉冲照射所述膜的第二区域以形成具有与所述第一熔融区域的形状基本相同的形状的第二熔融区域，其中所述第二熔融区域在冷却时结晶以形成一个 或更多横向生长的晶体，其是第一区域中的一种或多种晶体的伸长率。

公开(公告)号：US08063338B2

公开(公告)日：2011-11-22

申请号：US12644273

申请日：2009-12-22

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/84 ,  H01L29/04

CPC classification number: H01L21/0268 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  Y10S117/904

Abstract: A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.

Abstract translation: 提供了一种系统，方法和掩蔽装置，其提供使用修改的掩模图案使用顺序横向固化提高的多晶晶粒的宽度。 一个示例性的掩模图案采用行金刚石或圆形区域，以便控制垂直于一次结晶方向的晶粒的宽度。

公开(公告)号：US20110186854A1

公开(公告)日：2011-08-04

申请号：US13019042

申请日：2011-02-01

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L29/786 ,  H01L21/26

CPC classification number: H01L21/02686 ,  B23K26/066 ,  H01L21/02 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1088

Abstract: High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece (170) is irradiated with a laser beam (164) to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more beamlets using patterning masks (150). The mask patterns have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beamlets have dimensions and orientations that are conducive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the work piece at high speeds. Position sensitive triggering of a laser can be used generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage (180).

Abstract translation: 提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。 用激光束（164）照射薄膜半导体工件（170），使暴露于激光束的表面的目标区域熔化并再结晶。 使用图案掩模（150）将激光束成形为一个或多个子束。 掩模图案具有适当的尺寸和取向以对激光束辐射进行图案，使得由子束靶向的区域具有有利于半导体重结晶的尺寸和取向。 工件沿着相对于激光束的线性路径被机械平移，以高速处理工件的整个表面。 激光器的位置敏感触发可用于产生激光束脉冲，以在半导体材料在电动平台（180）上平移时在工件表面上的精确位置处熔融和再结晶半导体材料。

公开(公告)号：US20110121306A1

公开(公告)日：2011-05-26

申请号：US12776756

申请日：2010-05-10

Applicant: James S. Im ,  Ui-Jin Chung ,  Alexander B. Limanov ,  Paul C. Van Der Wilt

Inventor： James S. Im ,  Ui-Jin Chung ,  Alexander B. Limanov ,  Paul C. Van Der Wilt

IPC: H01L29/786 ,  H01L21/268 ,  H01L29/04 ,  B23K26/00

CPC classification number: H01L21/268 ,  B23K26/354 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296

Abstract: The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Abstract translation: 所公开的用于非周期脉冲顺序侧向凝固的系统和方法涉及加工薄膜。 用于在选择的方向上推进薄膜的同时进行薄膜的处理的方法包括用第一激光脉冲和第二激光脉冲照射薄膜的第一区域，并用第三激光器照射薄膜的第二区域 脉冲和第四激光脉冲，其中第一激光脉冲和第二激光脉冲之间的时间间隔小于第一激光脉冲和第三激光脉冲之间的时间间隔的一半。 在一些实施例中，每个脉冲提供成形梁并且具有足够的能量密度，以在其厚度上熔化薄膜以形成冷却时横向结晶的熔融区域。 在一些实施例中，第一和第二区域彼此相邻。 在一些实施例中，第一和第二区域间隔一段距离。

公开(公告)号：US07906414B2

公开(公告)日：2011-03-15

申请号：US12708307

申请日：2010-02-18

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  B23K26/066 ,  H01L21/02 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1088

Abstract: High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more beamlets using patterning masks. The mask patterns have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beamlets have dimensions and orientations that are conducive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the work piece at high speeds. Position sensitive triggering of a laser can be used generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.

Abstract translation: 提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。 用激光束照射薄膜半导体工件以熔化暴露于激光束的表面的目标区域的再结晶。 使用图案掩模将激光束成形为一个或多个子束。 掩模图案具有适当的尺寸和取向以对激光束辐射进行图案，使得由子束靶向的区域具有有利于半导体重结晶的尺寸和取向。 工件沿着相对于激光束的线性路径被机械平移，以高速处理工件的整个表面。 可以使用位置敏感的激光触发来产生激光束脉冲，以在半导体材料在电动平台上平移时在工件表面上的精确位置处熔融和重结晶半导体材料。

公开(公告)号：US07709378B2

公开(公告)日：2010-05-04

申请号：US11502056

申请日：2006-08-10

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/44

CPC classification number: H01L28/60 ,  H01L21/76838 ,  H01L21/76894 ,  Y10S438/94 ,  Y10S438/955

Abstract: A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains.

Abstract translation: 一种用于通过用第一受激准分子激光脉冲照射金属层来处理衬底上的薄金属层以控制金属层中的晶粒尺寸，晶粒形状和晶界位置和取向的方法和装置，所述第一准分子激光脉冲具有由 面具有阴影区域和子束。 由子束重叠的金属层的每个区域在其整个厚度上熔化，并且金属层与阴影区域重叠的每个区域保持至少部分未熔化。 在通过第一准分子激光脉冲照射完成熔融区域的再凝固后，通过具有偏移强度图案的第二准分子激光脉冲照射金属层，使得阴影区域与具有越来越小的晶粒的金属层的区域重叠。

公开(公告)号：US07679028B2

公开(公告)日：2010-03-16

申请号：US11744493

申请日：2007-05-04

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: B23K26/00 ,  B23K26/06

CPC classification number: B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Abstract translation: 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化， 均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。