公开(公告)号：US20070117286A1

公开(公告)日：2007-05-24

申请号：US11594135

申请日：2006-11-08

Applicant: Jin Jang ,  Jae-Hwan Oh ,  Eun-Hyun Kim ,  Ki-Hyoung Kim

Inventor： Jin Jang ,  Jae-Hwan Oh ,  Eun-Hyun Kim ,  Ki-Hyoung Kim

IPC: H01L21/84 ,  H01L31/062 ,  H01L21/00

CPC classification number: B23K26/0738 ,  B23K26/082 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02683 ,  H01L27/1281

Abstract: Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.

Abstract translation: 公开了根据本发明的示例性实施方案的多晶硅及其结晶方法。 多晶硅包括：绝缘基板; 以及形成在绝缘基板上的光学部分，用于接收CW激光束，并且在一个维度上按强度弱点，强度 - 弱度和强度 - 弱度的顺序改变光束的强度，使得非晶硅薄膜结晶 。 因此，当设置在诸如玻璃基板的绝缘膜上的非晶硅薄膜结晶到多晶硅薄膜时，本发明可以通过以恒定的方向和尺寸生长晶粒来形成良好的多晶硅薄膜。

公开(公告)号：US20070115268A1

公开(公告)日：2007-05-24

申请号：US11544198

申请日：2006-10-05

Applicant: Jin Jang ,  Jae Jung ,  Yong Kim ,  Hyo Song ,  Hwan Lim

Inventor： Jin Jang ,  Jae Jung ,  Yong Kim ,  Hyo Song ,  Hwan Lim

IPC: G09G3/22

CPC classification number: G06F1/1616 ,  G02F1/133308 ,  G02F2202/28 ,  G06F1/1637

Abstract: A display with a window assembly includes a case unit with an opening and having a stepped part in at least one side of an edge of the opening; a window member having a first surface coupled with the stepped part; a display unit closely adhered on a first side to a second surface of the window member; a backlight unit provided on a second side of the display unit, so as to project light to the display unit, the backlight unit having a housing unit for enclosing the display unit, and closely adhered to at least one portion of the window member that is not closely adhered to the display unit; and an adhesion unit arranged between the backlight unit and the window member to adhere the backlight unit and the window member to each other.

Abstract translation: 具有窗组件的显示器包括具有开口的壳体单元，并且在开口的边缘的至少一侧具有台阶部分; 窗构件，其具有与所述台阶部联接的第一表面; 密封地粘附在所述窗构件的第一面上的显示单元; 背光单元，其设置在所述显示单元的第二侧上，以将光投射到所述显示单元，所述背光单元具有用于封闭所述显示单元的壳体单元，并且紧密附着在所述窗构件的至少一部分上， 不紧密贴在显示单元上; 以及布置在背光单元和窗构件之间以将背光单元和窗构件彼此粘合的粘合单元。

公开(公告)号：US20060270198A1

公开(公告)日：2006-11-30

申请号：US11491227

申请日：2006-07-24

Applicant: Jin Jang ,  Seong-Jin Park

Inventor： Jin Jang ,  Seong-Jin Park

IPC: H01L21/20

CPC classification number: H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296

Abstract: The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 on average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.

Abstract translation: 本发明涉及通过使包含镍的非晶硅层结晶而形成的含有Ni的多晶硅膜。 本发明包括多晶硅膜，其中多晶膜含有浓度范围为2×10 17至5×10 19原子/ cm 3的Ni原子。 并且包括多个针状硅微晶。 另一方面，本发明包括多晶硅膜，其中多晶膜含有密度为2×10 17至5×10 19原子/ cm 3的Ni原子 包括多个针状硅微晶，并形成在绝缘基板上。 根据本发明的这种多晶硅膜避免了通常以常规的金属诱导结晶方法产生的金属污染。

公开(公告)号：US07074728B2

公开(公告)日：2006-07-11

申请号：US10189454

申请日：2002-07-08

Applicant: Jin Jang ,  Kyung Ho Kim

Inventor： Jin Jang ,  Kyung Ho Kim

IPC: H01L21/26 ,  H01L21/326

CPC classification number: H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/268

Abstract: A method for crystallizing an amorphous film by using an electric field and an ultraviolet (UV) ray, and method for fabricating an LCD by using the same. The method for crystallizing an amorphous film includes forming an amorphous film having a catalytic metal deposited thereon on a substrate, irradiating a UV ray on the amorphous film, and applying an electric field to the amorphous film.

公开(公告)号：US07022191B2

公开(公告)日：2006-04-04

申请号：US10899014

申请日：2004-07-27

Applicant: Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

Inventor： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh ,  Woo-Sung Shon ,  Seong-Jin Park

IPC: C30B25/14

CPC classification number: H01L21/02672 ,  C30B1/023 ,  C30B29/06 ,  H01J37/32009 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Abstract translation: 本发明涉及一种使非晶硅层结晶的方法及其使用等离子体结晶非晶硅层的结晶装置。 本发明包括以下步骤：通过等离子体曝光在非晶硅层上沉积用于硅结晶的诱导物质，并在非晶硅层上对非晶硅层进行退火。 本发明包括具有内部空间的腔室，腔室中的衬底支撑件，其中衬底支撑件支撑衬底;腔室中的等离子体产生装置，其中等离子体产生装置在室内产生等离子体，以及衬底支撑件处的加热器 其中所述加热器对所述基板供热。

公开(公告)号：US20050208985A1

公开(公告)日：2005-09-22

申请号：US11063580

申请日：2005-02-24

Applicant: Book Park ,  Jin Jang ,  Seon Lee

Inventor： Book Park ,  Jin Jang ,  Seon Lee

IPC: H04B1/38 ,  H04M1/02

CPC classification number: H04B1/3816 ,  H04M1/0235 ,  H04M2250/14

Abstract: Disclosed is a slide-type mobile communication terminal capable of mounting a memory card, wherein the memory card can be easily mounted/detached and a mounted state of the memory card can be stably maintained while minimizing a thickness increase of the terminal due to the mount of the memory card, by forming a receiving recess for mounting the memory card on a rear surface of a slide cover. A slide-type mobile communication terminal according to the invention has advantages such that it is possible to mount/detach a memory card easily and to form a receiving recess that mounts the memory card without increasing the thickness of the sliding cover.

Abstract translation: 公开了一种能够安装存储卡的滑盖式移动通信终端，其中可以容易地安装/拆卸存储卡，并且可以稳定地保持存储卡的安装状态，同时最小化由于安装而导致的终端的厚度增加 通过形成用于将存储卡安装在滑盖的后表面上的容纳凹槽。 根据本发明的滑盖型移动通信终端具有能够容易地安装/拆卸存储卡并且形成安装存储卡的接收凹部而不增加滑盖的厚度的优点。

公开(公告)号：US20050176185A1

公开(公告)日：2005-08-11

申请号：US10882933

申请日：2004-07-01

Applicant: Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

Inventor： Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

IPC: H01L29/786 ,  H01L21/00 ,  H01L21/336 ,  H01L27/28 ,  H01L51/30 ,  H01L51/40 ,  H01L51/56 ,  H01L21/84

CPC classification number: H01L27/283 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545 ,  H01L51/56

Abstract: The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.

Abstract translation: 本发明涉及有选择地沉积有机半导体材料的方法和制造有机半导体薄膜晶体管阵列的方法。 由于薄膜晶体管阵列是通过在衬底上淀积有机半导体有源层之前在衬底上局部地执行等离子体处理而形成的，所以有机半导体材料只沉积在具有岛状的有机半导体有源层上。 因此，不需要使用荫罩法或光刻法来制造有源矩阵阵列。 因此，本发明的优点在于可以获得高分辨率薄膜晶体管阵列，并且防止阵列中的薄膜晶体管的特性劣化。

公开(公告)号：US20050025616A1

公开(公告)日：2005-02-03

申请号：US10896499

申请日：2004-07-22

Applicant: Jin Jang ,  Sang Park ,  Sang Noh ,  Yong Hwang

Inventor： Jin Jang ,  Sang Park ,  Sang Noh ,  Yong Hwang

IPC: F02M59/12 ,  F04D29/18 ,  F04D5/00

CPC classification number: F04D29/188

Abstract: Provided is a turbine type electric fuel pump for an automobile having a casing in which a pump portion and a motor portion are installed. The pump portion includes a fuel intake case having a fuel intake hole, a fuel discharge case having a fuel discharge hole, and an impeller installed on a pumping chamber. An inlet side ring type duct is connected to the fuel intake hole. An outlet side ring type duct is connected to the fuel discharge hole. The impeller includes a disc portion in which a shaft assembly portion is formed at the center thereof, a plurality of blades extending from an outer circumferential surface of the disc portion outwardly in a radial direction, and a ring portion connecting the blades along the outer circumferential surface of the disc portion. The outer circumferential surface of the disc portion gradually protrudes outwardly in a radial direction of the impeller from both upper and lower sides thereof to a center thereof. The inner circumferential surface of the ring portion gradually protrudes inwardly in a radial direction of the impeller from both upper and lower sides thereof to a center thereof.

Abstract translation: 提供一种用于汽车的涡轮式电动燃料泵，其具有其中安装有泵部分和马达部分的壳体。 泵部分包括具有燃料进入孔的燃料进入壳体，具有燃料排出孔的燃料排出壳体和安装在泵送室上的叶轮。 入口侧环型管道连接到燃料进入孔。 出口侧环形管道连接到燃料排放孔。 叶轮包括在其中心处形成有轴组件部分的盘部分，从盘部分的外圆周表面沿径向向外延伸的多个叶片，以及沿着外周部连接叶片的环部分 盘部分的表面。 盘部的外周面从叶轮的上下方向向中心渐渐地从叶轮的径向向外侧突出。 环状部的内周面从叶轮的上下方向向中心渐渐地从叶轮的径向向内侧突出。

公开(公告)号：US06835608B2

公开(公告)日：2004-12-28

申请号：US10189511

申请日：2002-07-08

Applicant: Jin Jang ,  Kyung Ho Kim

Inventor： Jin Jang ,  Kyung Ho Kim

IPC: H01L2100

CPC classification number: H01L21/02488 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method for crystallizing an amorphous film by doping phosphorus and using FE-MIC, and method for fabrication an LCD by using the same. The method for crystallizing an amorphous film includes forming an amorphous film containing an impurity on a substrate, forming a metal layer on the amorphous film, heat treating the amorphous film, and applying an electric field to the amorphous film.

Abstract translation: 通过掺杂磷和使用FE-MICC来结晶非晶膜的方法以及使用它们制造LCD的方法。 用于结晶非晶膜的方法包括在衬底上形成含有杂质的非晶膜，在非晶膜上形成金属层，对非晶膜进行热处理，并向非晶膜施加电场。

公开(公告)号：US06316295B1

公开(公告)日：2001-11-13

申请号：US09407114

申请日：1999-09-27

Applicant: Jin Jang ,  Kyung-Ha Lee

Inventor： Jin Jang ,  Kyung-Ha Lee

IPC: H01L2100

CPC classification number: H01L29/66757 ,  H01L29/78621

Abstract: A method of fabricating a thin film transistor includes the steps of forming an active layer on an insulating substrate; forming an insulating layer and a first metal layer on the active layer; forming a photoresist pattern for forming a gate electrode on the metal layer; etching the metal layer and the insulating layer by using the photoresist pattern as a mask, and respectively forming a gate electrode and a gate insulating layer to expose a part of the active layer; forming an amorphous silicon layer on the resultant whole surface substrate; forming a second metal layer on the amorphous silicon layer; patterning the second metal layer and the amorphous silicon layer by a photolithographic process to form an offset layer and a source/drain electrode; and carrying out a lift-off process to remove the photoresist pattern, and exposing the surface on the gate electrode.

Abstract translation: 制造薄膜晶体管的方法包括在绝缘基板上形成有源层的步骤; 在所述有源层上形成绝缘层和第一金属层; 形成用于在所述金属层上形成栅电极的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为掩模蚀刻金属层和绝缘层，并分别形成栅极电极和栅极绝缘层以暴露活性层的一部分; 在所得整个表面基板上形成非晶硅层; 在所述非晶硅层上形成第二金属层; 通过光刻工艺图案化第二金属层和非晶硅层以形成偏移层和源极/漏极; 并进行剥离处理以除去光致抗蚀剂图案，并使栅电极上的表面露出。