公开(公告)号：US20050260773A1

公开(公告)日：2005-11-24

申请号：US10849311

申请日：2004-05-19

申请人： Liubo Hong ,  Tom Zhong ,  Lin Yang

发明人： Liubo Hong ,  Tom Zhong ,  Lin Yang

IPC分类号： G11C11/16 ,  H01L21/00 ,  H01L27/22 ,  H01L43/12

CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/12

摘要： An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching current is reduced and tightly distributed for better device performance. A key feature in the method of forming the MRAM cell structure is a two step planarization of an insulation layer deposited on the MTJ array. A CMP step flattens the insulation layer at a distance about 60 to 200 Angstroms above the cap layer in the MTJ. Then an etch back step thins the insulation layer to a level about 50 to 190 Angstroms below the top of the cap layer. Less than 5 Angstroms of the cap layer is removed. The distance variation from the free layer to an overlying bit line or word line is within +/−5 Angstroms.

摘要翻译： 公开了一种MRAM结构，其中从位线或字线到MTJ中的下游自由层的距离小且受到良好控制。 因此，位线或字线切换电流减少并且分布紧密，从而更好的器件性能。 形成MRAM单元结构的方法中的一个关键特征是沉积在MTJ阵列上的绝缘层的两步平面化。 CMP步骤在MTJ的帽层上方约60至200埃的距离处使绝缘层平坦化。 然后，回蚀步骤将绝缘层沉降到帽层顶部下方约50至190埃的水平。 少于5埃的盖层被去除。 从自由层到上位线或字线的距离变化在+/- 5埃以内。

公开(公告)号：US06960480B1

公开(公告)日：2005-11-01

申请号：US10849310

申请日：2004-05-19

申请人： Cheng T. Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

发明人： Cheng T. Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

IPC分类号： G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01F10/30 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L21/00

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.

摘要翻译： 特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑 ，并具有高的击穿电压。 种子层是形成在Ta的溅射蚀刻层上的NiCr层。 用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。 用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被原位氧化（NOX），以形成阻挡层。 所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

公开(公告)号：US06695954B2

公开(公告)日：2004-02-24

申请号：US09977160

申请日：2001-10-11

申请人： Liubo Hong

发明人： Liubo Hong

IPC分类号： C23C1434

CPC分类号： H01J37/32082 ,  H01J37/3408

摘要： A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source. In order to place a deposition chamber of a physical vapor deposition apparatus in which metal or other material is sputtered from a target and a coil in condition to effect deposition of a layer consisting of the sputtered material on a substrate subsequent to deposition, in the apparatus, of a layer containing a reaction compound of the sputtered material, the chamber is filled with a non-reactive gas and a voltage is applied to sputter from the target and coil any reaction compound which has coated the target and coil during deposition of the layer containing the reaction compound of the sputtered metal.

摘要翻译： 一种用于在包括沉积室的装置中沉积在工件表面上含有金属的材料层的方法和装置; 工件支撑件，其在所述腔室内提供工件支撑表面; 在该腔室内的线圈，该线圈包含将被包含在待沉积层中的金属; 以及RF电源，其被连接以将RF功率提供给线圈以便在腔室内产生等离子体，当只有RF功率被传送到线圈时，在线圈中感应出DC自偏压电位。 从直流电压源向线圈施加与DC自偏压电位不同的直流偏置电位。为了放置物理气相沉积设备的沉积室，其中金属或其他材料从目标溅射 以及在该装置中沉积包含溅射材料的反应化合物的层的条件下，使由溅射材料组成的层沉积在基板上的条件的线圈，所述室填充有非反应性气体，并且 施加电压从目标物溅射并卷绕在包含溅射金属的反应化合物的层的沉积期间涂覆了目标物和线圈的任何反应化合物。

公开(公告)号：US06652717B1

公开(公告)日：2003-11-25

申请号：US08857720

申请日：1997-05-16

申请人： Liubo Hong

发明人： Liubo Hong

IPC分类号： C23C1434

CPC分类号： H01F29/10 ,  H01F29/12 ,  H01J37/321 ,  H01J37/32174

摘要： Variable reactances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.

摘要翻译： 在用于在基板上沉积溅射靶材料的膜的等离子体沉积系统中用于RF线圈的阻抗匹配箱中的可变电抗可以在沉积工艺期间改变，使得RF线圈和衬底加热以及膜沉积 由于RF线圈的RF电压分布的“时间平均”，因而更均匀。

公开(公告)号：US06369983B1

公开(公告)日：2002-04-09

申请号：US09374591

申请日：1999-08-13

申请人： Liubo Hong

发明人： Liubo Hong

IPC分类号： G11B531

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3133

摘要： A method and system for providing a write head is disclosed. The write head includes at least one pole and an insulating layer. The at least one pole is for writing magnetic data. The method and system include providing an intermediate layer and providing at least one conductive coil. The intermediate layer is disposed between the insulating layer and the at least one conductive coil. The intermediate layer is composed of at least one material capable of being dry etched. The at least one conductive coil is in proximity to the at least one pole and is for carrying a current to energize the at least one pole during writing.

摘要翻译： 公开了一种用于提供写入头的方法和系统。 写头包括至少一个极和绝缘层。 至少一个磁极用于写磁数据。 该方法和系统包括提供中间层并提供至少一个导电线圈。 中间层设置在绝缘层和至少一个导电线圈之间。 中间层由能够被干蚀刻的至少一种材料构成。 所述至少一个导电线圈靠近所述至少一个极，并且用于承载电流以在写入期间激励所述至少一个极。

公开(公告)号：US6103070A

公开(公告)日：2000-08-15

申请号：US856423

申请日：1997-05-14

申请人： Liubo Hong

发明人： Liubo Hong

IPC分类号： H05H1/46 ,  C23C14/32 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/321 ,  C23C14/32 ,  C23C14/35 ,  H01J37/3405

摘要： An insulative inter-turn shield positioned at the channel in coil windings to confine the plasma generated by energy radiated by the coil windings in an apparatus for sputtering material onto a workpiece. The insulative shield can prevent the escape of the plasma through the channel between the windings to thereby improve the effectiveness of the sputtering process. In addition, the shield can also block the passage of sputtered material through the channel, preventing the contamination of the vacuum chamber.

摘要翻译： 位于线圈绕组中的通道处的绝缘的匝间屏蔽件将由线圈绕组辐射的能量产生的等离子体限制在用于将材料溅射到工件上的装置中。 绝缘屏蔽可以防止等离子体通过绕组之间的通道逸出，从而提高溅射工艺的有效性。 此外，屏蔽还可以阻止溅射材料通过通道，防止真空室的污染。

公开(公告)号：US6077402A

公开(公告)日：2000-06-20

申请号：US857719

申请日：1997-05-16

申请人： Liubo Hong ,  Hougong Wang ,  Gongda Yao ,  Zheng Xu

发明人： Liubo Hong ,  Hougong Wang ,  Gongda Yao ,  Zheng Xu

IPC分类号： H05H1/46 ,  C23C14/34 ,  C23C14/40 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/321 ,  H01J37/34 ,  H01J2237/3323

摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.

摘要翻译： 在等离子体发生装置中，线圈位于靶和工件之间，以将RF能量感应耦合到等离子体中，使得电离沉积材料的一部分的路径从工件的中心偏转并且朝向工件的边缘 工件。 因此，已经发现可以提高沉积的均匀性。 在所示实施例中，线圈是形成在沉积材料流中心的大致平面螺旋形的多匝线圈。

公开(公告)号：US08614864B1

公开(公告)日：2013-12-24

申请号：US13467354

申请日：2012-05-09

申请人： Liubo Hong ,  Honglin Zhu

发明人： Liubo Hong ,  Honglin Zhu

IPC分类号： G11B5/39

CPC分类号： H01L43/12 ,  H01L43/08

摘要： A magnetoresistive device is provided. The device includes at least one magnetoresistive element having at least one side, at least one hard bias layer in proximity to the at least one side of the at least one magnetic element, and a hard bias capping structure on the at least one hard bias layer. The hard bias capping structure includes a protective layer covering at least a first portion of the at least one hard bias layer and a planarization stop layer covering a second portion of the at least one hard bias layer. A portion of the protective layer resides between the planarization stop layer and the at least one hard bias layer.

摘要翻译： 提供了一种磁阻器件。 该器件包括至少一个具有至少一个侧面的磁阻元件，在至少一个磁性元件的至少一个侧面附近的至少一个硬偏置层，以及在该至少一个硬偏置层上的硬偏压封盖结构 。 所述硬偏压封盖结构包括覆盖所述至少一个硬偏置层的至少第一部分的保护层和覆盖所述至少一个硬偏置层的第二部分的平坦化停止层。 保护层的一部分位于平坦化停止层和至少一个硬偏压层之间。

公开(公告)号：US08422276B2

公开(公告)日：2013-04-16

申请号：US12930955

申请日：2011-01-20

申请人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

发明人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

IPC分类号： G11C11/00

CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

摘要： Methods are presented for fabricating an MTJ element having a uniform vertical distance between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not reduced in thickness and serves to maintain uniform vertical distance between the bit line and the MTJ free layer.

摘要翻译： 提出了用于制造在其自由层和位线之间具有均匀垂直距离的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护间隔层，以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层的厚度不减小并用于保持位线和MTJ自由层之间的均匀垂直距离。

公开(公告)号：US08347489B2

公开(公告)日：2013-01-08

申请号：US12874116

申请日：2010-09-01

申请人： Liubo Hong ,  Aron Pentek ,  Yi Zheng ,  Honglin Zhu

发明人： Liubo Hong ,  Aron Pentek ,  Yi Zheng ,  Honglin Zhu

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magnetic write head having a tapered write pole as well as a leading edge taper, and independent trailing and side magnetic shields. The method allows the write pole to be constructed by a dry process wherein the write pole material is either deposited by a process such as sputter deposition or electrically plated and the write pole shape is defined by masking and ion milling. The write pole has a stepped feature that can either be used to provide increased magnetic spacing between the trailing shield and the write pole at a location slightly recessed from the ABS or can be magnetic material that increases the effective thickness of the write pole at a location slightly recessed from the ABS. A bump structure can be further built over that stepped feature to enhance field gradient as well as reduce trailing shield saturation.

摘要翻译： 一种用于制造具有锥形写柱以及前缘锥形的磁写头的方法，以及独立的后侧和侧面磁屏蔽。 该方法允许写极通过干法进行构建，其中写极材料通过诸如溅射沉积或电镀的工艺沉积，并且写极形状通过掩模和离子铣削定义。 写极具有阶梯特征，其可以用于在稍微从ABS处凹陷的位置处在后屏蔽和写极之间提供增加的磁间隔，或者可以是磁性材料，其增加写极的位置处的有效厚度 从ABS略微凹进。 可以在该阶梯特征上进一步构建凸块结构，以增强磁场梯度以及减少后屏蔽饱和度。