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    Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM
    1.
    发明授权
    Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM 有权
    缓冲（种子）层在高性能磁隧道结MRAM中

    公开(公告)号：US07238979B2

    公开(公告)日：2007-07-03

    申请号：US11236049

    申请日：2005-09-26

    申请人： Cheng T. Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

    发明人： Cheng T. Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

    摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.

    摘要翻译： 特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑 ，并具有高的击穿电压。 种子层是形成在Ta的溅射蚀刻层上的NiCr层。 用于MRAM的隧道势垒层由Al的薄层形成，其被自由基氧化（ROX），原位形成具有上述特征的层。 用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被天然氧化（NOX）原位形成以形成阻挡层。 所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

    Novel buffer (seed) layer in a high performance magnetic tunneling junction MRAM
    7.
    发明申请
    Novel buffer (seed) layer in a high performance magnetic tunneling junction MRAM 有权
    在高性能磁隧道结MRAM中的新型缓冲（种子）层

    公开(公告)号：US20060022227A1

    公开(公告)日：2006-02-02

    申请号：US11236049

    申请日：2005-09-26

    申请人： Cheng Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

    发明人： Cheng Horng ,  Liubo Hong ,  Ru-Ying Tong ,  Yu-Hsia Chen

    IPC分类号： H01L29/80

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

    摘要： An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the LAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.

    摘要翻译： 特别适合用作MRAM（磁性随机存取存储器）或隧道磁阻（TMR）读取传感器的MTJ（磁性隧道结）装置形成在种子层上，允许隧穿势垒层超薄，平滑 ，并具有高的击穿电压。 种子层是形成在Ta的溅射蚀刻层上的NiCr层。 用于LAM的隧道势垒层由Al原位氧化的薄层（ROX）形成，以形成具有上述特征的层。 用于读取传感器的隧道势垒层由Al或HfAl双层的薄层形成，其被天然氧化（NOX）原位形成以形成阻挡层。 所得到的器件在GMR比和结电阻方面基本上具有改进的性能特征。

    Structure/method to fabricate a high-performance magnetic tunneling junction MRAM
    10.
    发明授权
    Structure/method to fabricate a high-performance magnetic tunneling junction MRAM 失效
    制造高性能磁隧道结MRAM的结构/方法

    公开(公告)号：US07217577B2

    公开(公告)日：2007-05-15

    申请号：US11522663

    申请日：2006-09-18

    申请人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

    发明人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

    摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

    摘要翻译： 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层） 其超薄，光滑，并具有高击穿电压。 在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。