摘要:
A printed item contact member 54 according to the present invention includes: a base material 50; a fixing layer 52 that is formed on the surface of the base material 50 and substantially spherical particles 51 are fixed thereto; and a remarkably thin low-surface-tension coating layer 53 that covers the surface of the fixing layer 52 having the substantially spherical particles 51 fixed thereto and that exhibits release properties with respect to a printed item. The printed item contact member exhibits high ink repellency while maintaining the micro-uneven surface structure and is free from adhesion of yarn waste or dust to the member during cleaning, and therefore can be suitably used as, for example, a member for printing device in contact with the surface of printing paper.
摘要:
A flexible substrate 1 of the present invention is formed of a thin glass sheet 10 having a thickness of 50 μm or less and a composite material sheet 20 having a thickness of 100 μm or less which are laminated together, the composite material sheet 20 being formed of a composite material of an aggregation of cellulose nanofiber and amorphous synthetic resin.
摘要:
A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要:
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要:
A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要:
A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.
摘要:
Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9. (D)
摘要:
[Problem to be Solved] A shuffling hand feeling and unwanted non-uniform absorption characteristics in the case of using a tow (fiber bundle) are prevented. [Solution] An absorbent body includes a fiber aggregate 21 formed by opening the tow, a super absorbent polymer 54, and a sheet covering these components; and includes the super absorbent polymer 54 bonded to the sheet 58 with an adhesive that is applied in a continuous plane to the entire surface or the substantially entire surface of at least the portion to be provided with the super absorbent polymer 54 in this sheet 58.
摘要:
A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.
摘要:
Provided is curable resin composition which gives a cured article excellent in chemical resistance, dielectric properties, low water-absorption, heat resistance, flame retardance, and mechanical properties and which is usable in applications such as dielectric materials, insulating materials, heat-resistant materials, and structural materials. The curable resin composition includes a component (A) which is a polyphenylene ether oligomer having a number-average molecular weight of 700 to 4,000 and having a vinyl group at both end and a component (B) which is a solvent-soluble polyfunctional vinylaromatic copolymer which has structural units derived from monomers including a divinylaromatic compound (a) and an ethylvinylaromatic compound (b) and in which the content of repeating units derived from the divinylaromatic compound (a) is 20 mol % or higher, the ratio of the amount (wt. %) of the component (A) to that (wt. %) of the component (B) being (20 to 98):(2 to 80). The composition can further contain a layered silicate, a halogenated flame retardant, etc.