公开(公告)号：US4786574A

公开(公告)日：1988-11-22

申请号：US011507

申请日：1987-02-05

申请人： Shigeru Shirai ,  Keishi Saitoh ,  Takayoshi Arai ,  Minoru Kato ,  Yasushi Fujioka

发明人： Shigeru Shirai ,  Keishi Saitoh ,  Takayoshi Arai ,  Minoru Kato ,  Yasushi Fujioka

IPC分类号： G03G5/082

CPC分类号： G03G5/08242 ,  G03G5/08228 ,  Y10S430/146

摘要： A light-receiving member for electrophotography comprises a substrate and a light-receiving layer provided on the substrate comprising a photoconductive layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as the constituent in a matrix of silicon atoms and a surface layer comprising an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms and the constituents, said surface layer being changed in the distribution concentration in the layer thickness direction of the constituent elements such that matching optical gap is obtained at the interface with said photoconductive layer, and the maximum distribution concentration of the hydrogen atoms within said surface layer being 41 to 70 atomic percent.

公开(公告)号：US4642277A

公开(公告)日：1987-02-10

申请号：US663965

申请日：1984-10-23

申请人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

发明人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

IPC分类号： G03G5/082 ,  G03G5/085

CPC分类号： G03G5/08228

摘要： A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN).sub.max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.

摘要翻译： 提供了一种光电导元件，其具有用于光电导元件的基底和具有光导电性的光接收层，该光接收层具有层结构，其中包含含有锗原子的非晶态材料的第一层区域（G）和显示光电导性的第二层区域（S） 含有硅原子的非晶质材料从上述基底侧连续提供，所述光接收层含有碳原子和物质（C），用于在分布状态下控制导电性，使得在所述光接收层中，最大 所述物质（c）在层厚度方向上的分布浓度的值C（PN）max存在于所述第二层区域（S）内，并且在所述第二层区域（S）中，所述物质（C）分布得更大 量在所述衬底的一侧。

公开(公告)号：US4585720A

公开(公告)日：1986-04-29

申请号：US649713

申请日：1984-09-12

申请人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

发明人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

IPC分类号： G03G5/082 ,  G03G5/085

CPC分类号： G03G5/08242 ,  G03G5/08228

摘要： A photoconductive member comprises a substrate, a layer composed of an amorphous material comprising Si and Ge, said layer having a layer region (C) containing carbon atoms. The layer region (C) has a region (X) where the concentration of carbon atoms increases in the direction of layer thickness toward the upper surface of said layer.An amorphous layer of silicon containing at least one of nitrogen and oxygen may overlie said layer.

摘要翻译： 感光构件包括基底，由包含Si和Ge的无定形材料构成的层，所述层具有含有碳原子的层区域（C）。 层区域（C）具有其中碳原子浓度朝向所述层的上表面的层厚度方向增加的区域（X）。 含有氮和氧中的至少一种的硅的非晶层可以覆盖在所述层上。

公开(公告)号：US4572882A

公开(公告)日：1986-02-25

申请号：US647693

申请日：1984-09-06

申请人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

发明人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

IPC分类号： G03G5/082 ,  H01L31/0376 ,  H01L31/09

CPC分类号： H01L31/095 ,  G03G5/08228 ,  G03G5/08242 ,  H01L31/03765 ,  Y02E10/548

摘要： A photoconductive member is provided which comprises a substrate and a photoconductive light receiving layer made up of an amorphous material containing silicon atoms and germanium atoms, the light receiving layer containing nitrogen atoms and having a first layer region (1), a third layer region (3), and a second layer region (2) of nitrogen atom distribution concentrations C(1), C(3), and C(2), respectively, in the thickness direction, in that order from the substrate side to the opposite side, wherein C(3) is higher than any of C(2) and C(1) and one of C(1) and C(2) is not zero.

摘要翻译： 提供了一种感光构件，其包括由包含硅原子和锗原子的非晶材料构成的基底和光电导光接收层，所述光接收层含有氮原子并具有第一层区域（1），第三层区域 3）以及厚度方向上的氮原子分布浓度C（1），C（3）和C（2）的第二层区域（2），从基板侧到相对侧 其中C（3）高于C（2）和C（1）中的任何一个，C（1）和C（2）中的一个不为零。

公开(公告)号：US4567127A

公开(公告)日：1986-01-28

申请号：US647539

申请日：1984-09-05

申请人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

发明人： Keishi Saitoh ,  Yukihiko Ohnuki ,  Shigeru Ohno

IPC分类号： G03G5/082 ,  H01L31/20 ,  G03G5/08

CPC分类号： G03G5/08228 ,  H01L31/204 ,  Y02E10/50

摘要： A photoconductive member is provided which comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the distribution of germanium atoms therein being nonuniform in the layer thickness direction, and carbon atoms being contained in the light receiving layer.Said photoconductive member can further comprise thereon another layer which comprises amorphous material containing silicon atoms as a matrix and at least one kind of atoms selected from the group of nitrogen atoms and oxygen atoms.

摘要翻译： 提供了一种感光构件，其包括基底和具有光电导率的光接收层，其包含含有硅原子和锗原子的非晶态材料，其中锗原子在层厚度方向上的分布不均匀，并且包含在光中的碳原子 接收层。 所述光导体可进一步包括另一层，该层包含含有硅原子作为基体的非晶材料和至少一种选自氮原子和氧原子的原子。

公开(公告)号：US4546008A

公开(公告)日：1985-10-08

申请号：US667816

申请日：1984-11-02

申请人： Keishi Saitoh ,  Wataru Ando

发明人： Keishi Saitoh ,  Wataru Ando

IPC分类号： B05D3/02 ,  B05D3/06 ,  B05D7/24 ,  C09D4/00 ,  C23C16/24 ,  G03G5/082

CPC分类号： B05D1/60 ,  B05D1/62 ,  C09D4/00 ,  C23C16/24 ,  G03G5/08278 ,  B05D3/02 ,  B05D3/06

摘要： A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero and X is halogen atom to form a deposition film containing silicon atom on a substrate.A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only one species selected from hydrogen atom and halogen atom except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.

摘要翻译： 一种用于形成沉积膜的方法包括向具有至少一个下式的-OCaHbXc的取代基（OA）的气态的硅烷化合物（SiOA）施加激发能，其中b + c = 2a + 1，a为正 如果b和c不是同时为零，而X是卤素原子以形成在衬底上含有硅原子的沉积膜，则整数，b和c为零或正整数。 形成沉积膜的方法包括向具有2-6个硅原子的气态的硅烷化合物（SiA）施加激发能，其具有至少一个下式的-CaHbXc的取代基（A），其中b + c = 2a +1，a为正整数，b和c为0或正整数，X为含有至少一个选自氢原子和卤素原子的卤原子，另外至少一个硅原子存在于 两端仅与一个选自氢原子和卤原子的物质结合，除了与另一个硅原子结合，以在基片上形成含有硅原子的沉积膜。

公开(公告)号：US5573601A

公开(公告)日：1996-11-12

申请号：US323063

申请日：1994-10-14

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Masafumi Sano ,  Mitsuyuki Niwa

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Masafumi Sano ,  Mitsuyuki Niwa

IPC分类号： H01L31/0288 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/1804 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A pin type photovoltaic element having an electroconductive substrate and a cell stacked with an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor, all composed of a non-single crystal material containing silicon, and featuring an intermediate layer. The intermediate layer composed of non-single material containing silicon atoms as the matrix and atoms of elements belonging to Group IIIA and VA of the periodic table is between the i-type conductor layer and the p-type conductor layer or the n-type semiconductor layer. The intermediate layer may contain carbon atoms and/or germanium atoms.

摘要翻译： 具有导电性基板的pin型光电元件和层叠有n型半导体层，i型半导体层和p型半导体的单元，全部由含有硅的非单晶材料构成，具有中间体 层。 由含有硅原子的非单一材料构成的中间层和属于周期表的IIIA族和VA族的元素的原子在i型导体层和p型导体层或n型半导体之间 层。 中间层可以含有碳原子和/或锗原子。

公开(公告)号：US5527396A

公开(公告)日：1996-06-18

申请号：US398071

申请日：1995-03-03

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23C16/517 ,  C30B25/02 ,  C30B25/16 ,  G03G5/082 ,  H01L21/205 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/517 ,  G03G5/08264 ,  G03G5/08278 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78603 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。

公开(公告)号：US5236798A

公开(公告)日：1993-08-17

申请号：US587990

申请日：1990-09-25

申请人： Tatsuyuki Aoike ,  Koichi Matsuda ,  Keishi Saitoh ,  Mitsuyuki Niwa ,  Masafumi Sano ,  Hisami Tanaka

发明人： Tatsuyuki Aoike ,  Koichi Matsuda ,  Keishi Saitoh ,  Mitsuyuki Niwa ,  Masafumi Sano ,  Hisami Tanaka

IPC分类号： G03G5/08 ,  C08G77/60 ,  C08K3/16 ,  C08K5/17 ,  G03F7/075 ,  G03G5/147 ,  H01L51/30

CPC分类号： G03F7/0754 ,  C08G77/60 ,  C08K3/16 ,  C08K5/17 ,  H01L51/0094

摘要： An electrophotographic light receiving member comprising a substrate and a light receiving layer having a multi-layered structure disposed on said substrate, said light receiving layer comprising at least a photoconductive layer and a surface layer being stacked in this order from the side of said substrate, said photoconductive layer being formed of a non-single crystal material containing silicon atoms as the matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms, and said surface layer being formed of a polysilane compound having a weight average molecular weight of 6000 to 200000 and having at least an oxygen-free organic group selected from the group consisting of alkyl group, cycloalkyl group, aryl group and aralkyl group at the terminals.

摘要翻译： 一种电子照相光接收构件，包括基板和设置在所述基板上的具有多层结构的光接收层，所述光接收层至少包含光电导层和从所述基板侧依次堆叠的表面层， 所述光电导层由含有硅原子作为基体的非单晶材料和选自氢原子和卤素原子的至少一种原子形成，所述表面层由具有重量的聚硅烷化合物形成 平均分子量为6000〜200000，并且在末端具有至少一个选自烷基，环烷基，芳基和芳烷基的无氧有机基团。

公开(公告)号：US4865883A

公开(公告)日：1989-09-12

申请号：US298202

申请日：1989-01-17

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205

CPC分类号： C23C16/407

摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到 反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜 源的沉积膜的构成元素。