公开(公告)号：US20060027825A1

公开(公告)日：2006-02-09

申请号：US11196740

申请日：2005-08-04

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L33/00

CPC分类号： H01L27/14685 ,  H01L27/14627

摘要： An object of the present invention is to provide a solid-state imaging device that can be slimmed down and have an improved picture quality without sacrificing its sensitivity and the manufacturing method of the solid-state imaging device. The solid-state imaging device includes an imaging unit where unit cells are arranged in a two-dimensional array. Each of these unit cells has a photodiode and a first microlens and a second microlens which are formed above the photodiode. The maximum curvatures of the convex parts become greater from the center part to the periphery of the imaging unit.

摘要翻译： 本发明的一个目的是提供一种固态成像装置，该固态成像装置可以在不牺牲其灵敏度和固态成像装置的制造方法的情况下变薄并且具有改善的图像质量。 固态成像装置包括其中单位单元以二维阵列排列的成像单元。 这些单元电池中的每一个都具有光电二极管和形成在光电二极管上方的第一微透镜和第二微透镜。 凸部的最大曲率从成像单元的中心部到周边变大。

公开(公告)号：US06991951B2

公开(公告)日：2006-01-31

申请号：US10853129

申请日：2004-05-26

申请人： Rieko Nishio ,  Toshihiro Kuriyama

发明人： Rieko Nishio ,  Toshihiro Kuriyama

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/14632 ,  H01L27/14806

摘要： A solid-state imaging device production method is provided. A light-receiving section 12 is formed on a semiconductor substrate 1. A first insulating film 6 is formed on a light-receiving section 12 and the semiconductor substrate 1. A metal film for wiring is formed on the first insulating film 6. A protection film 8 is formed on the metal film. A resist film is formed on a predetermined region of the protection film. A portion of the protection film 8 and a portion of the metal film is removed by using the resist film to form a wire 7 whose upper face is covered by the protection film 8. A hydrogen-containing second insulating film 10 is formed on the wire 7 and the first insulating film 6. A heating process is performed for the second insulating film 10. An anisotropic etching process is performed for the entire surface of the second insulating film 10 to remove the second insulating film 10.

摘要翻译： 提供了一种固态成像装置制造方法。 在半导体衬底1上形成光接收部分12。 第一绝缘膜6形成在受光部12和半导体基板1上。 在第一绝缘膜6上形成用于布线的金属膜。 在金属膜上形成保护膜8。 在保护膜的预定区域上形成抗蚀剂膜。 通过使用抗蚀剂膜来除去保护膜8的一部分和金属膜的一部分，以形成其上表面被保护膜8覆盖的电线7。 在导线7和第一绝缘膜6上形成含氢的第二绝缘膜10。 对第二绝缘膜10进行加热处理。 对第二绝缘膜10的整个表面进行各向异性蚀刻处理以去除第二绝缘膜10。

公开(公告)号：US20050253044A1

公开(公告)日：2005-11-17

申请号：US11119763

申请日：2005-05-03

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L27/148 ,  H01L21/822 ,  H01L27/00 ,  H01L27/04 ,  H01L27/146 ,  H04N5/225 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N101/00

CPC分类号： H01L27/14812 ,  H04N2005/2255

摘要： The present invention aims to provide a solid-state imaging device that enables miniaturization of camera while maintaining the level of electrostatic damage resistance in the solid-state imaging device, and includes: an imaging unit 100 that transfers signal charge generated by performing photoelectric conversion on incident light, converts the signal charge into an electric signal, and outputs the electric signal as an image signal; and a peripheral circuit portion 110 which includes: a signal electrode pad 111; a power supply electrode pad 112; and a protection circuit 113 that has diodes 320 and 330 placed in opposition, and that discharges static electricity entering from the exterior, to the power supply electrode pad 112.

摘要翻译： 本发明的目的是提供一种固态成像装置，其能够在保持固态成像装置中的静电损伤电阻的水平的同时实现照相机的小型化，并且包括：成像单元100，其将通过进行光电转换产生的信号电荷传递到 入射光，将信号电荷转换为电信号，并输出电信号作为图像信号; 和外围电路部分110，其包括：信号电极焊盘111; 电源电极焊盘112; 以及保护电路113，其具有相对放置的二极管320和330，并且将从外部进入的静电放电到电源电极焊盘112。

公开(公告)号：US20050056901A1

公开(公告)日：2005-03-17

申请号：US10893931

申请日：2004-07-20

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L27/148 ,  H01L27/14 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372

CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14818 ,  H01L31/0232

摘要： In a solid-state imaging device of the present invention, light-sensitive elements 54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate 51. A plurality of detecting electrodes 53 are provided on the semiconductor substrate 51 corresponding to the light-sensitive elements 54 for detecting an electrical charge generated by each light-sensitive element 54. A plurality of interconnections 57 coat the detecting electrodes 53, and apply a voltage thereto. A plurality of reflecting walls 62 are formed in a grid pattern over the interconnection 57 so as to partition the light-sensitive elements 54 individually for reflecting a portion of light entering the semiconductor substrate 51 from above onto the light receiving section of each light-sensitive element 54. The plurality of reflecting walls 62 are electrically insulated from the interconnections 57.

摘要翻译： 在本发明的固体摄像装置中，将具有能够接收光的受光部的光敏元件54以规定的间隔配置在设置在半导体基板51上的光接收区域中的矩阵状 多个检测电极53设置在对应于感光元件54的半导体衬底51上，用于检测由每个光敏元件54产生的电荷。多个互连57涂覆检测电极53， 电压。 多个反射壁62形成在互连线57上的网格图案中，以便分别对感光元件54进行分隔，以将来自半导体衬底51的光的一部分从上面反射到每个感光元件的光接收部分上 多个反射壁62与互连57电绝缘。

公开(公告)号：US06362019B1

公开(公告)日：2002-03-26

申请号：US09534865

申请日：2000-03-24

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： H01L21339

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate of a first conductivity type; a photo-receiving portion of a second conductivity type formed in the semiconductor substrate; a detecting portion of the second conductivity type formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate; a transfer gate electrode formed on the insulating film at lest between the photo-receiving portion and the detecting portion; and a read-out circuit, which is electrically connected to the detecting portion. A diffusion region of the same conductivity type as the detecting portion is formed in a region of the semiconductor substrate that is adjacent to an end of the detecting portion near the gate electrode and separate from the photo-receiving portion. An impurity concentration in the photo-receiving portion and an impurity concentration in the diffusion region are lower than an impurity concentration in the detecting portion. With this solid-state imaging device and with the method for producing the same, a solid-state imaging device is provided that reduces crystal defects in the photo-receiving portion and improves the output image quality.

摘要翻译： 固态成像装置包括多个像素，每个像素包括第一导电类型的半导体衬底; 形成在半导体衬底中的第二导电类型的光接收部分; 形成在半导体衬底中的第二导电类型的检测部分; 形成在半导体衬底上的绝缘膜; 在所述光接收部分和所述检测部分之间至少形成在所述绝缘膜上的传输栅电极; 以及电连接到检测部的读出电路。 在半导体衬底的与栅电极附近的检测部分的一端相邻并与光接收部分开的区域中形成与检测部分相同的导电类型的扩散区域。 光接收部分中的杂质浓度和扩散区域中的杂质浓度低于检测部分中的杂质浓度。 利用该固态成像装置及其制造方法，提供了减少光接收部分中的晶体缺陷并提高输出图像质量的固态成像装置。

公开(公告)号：US6166405A

公开(公告)日：2000-12-26

申请号：US295061

申请日：1999-04-20

申请人： Toshihiro Kuriyama ,  Syouji Tanaka

发明人： Toshihiro Kuriyama ,  Syouji Tanaka

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374 ,  H01L31/062 ,  H01L29/04 ,  H01L31/036 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643

摘要： A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.

摘要翻译： 固态成像装置包括多个像素，每个像素包括半导体衬底; 形成在所述半导体衬底中的光接收部分; 形成在所述半导体衬底中的检测区域; 形成在所述半导体衬底上的绝缘膜，在所述光接收部分和所述检测区域之间的区域上方的所述绝缘膜上形成的栅电极; 以及电连接到检测部的读出电路。 在包括光接收部分的至少一部分并且不包括半导体衬底中的检测部分的至少一部分的区域之上的绝缘膜上形成反射降低膜。 利用该固态成像装置及其制造方法，提供了高灵敏度的MOS固态成像装置及其制造方法。

公开(公告)号：US5592082A

公开(公告)日：1997-01-07

申请号：US525874

申请日：1995-09-08

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F41/32 ,  H01L43/08

CPC分类号： G11B5/3925 ,  G01R33/09 ,  G01R33/096 ,  G11B5/399

摘要： A magnetic sensor includes a magnetoresistive effect layer (MR layer), on which permanent magnet layers are superimposed, the permanent magnet layers having slanted edges forming an angle .phi. with respect to the direction of an electric current I. The electrical resistance of the permanent magnet layers is higher than that of the MR layer. Due to the N and S polarities of the opposing slanted edges, sections of the MR layer located between the opposing slanted edges are magnetized with the angle .phi. such that a single magnetic domain is formed. The direction of magnetization M is at an angle .phi. of approximately 45.degree. with respect to the electric current I, so that it is possible to detect a change in the electrical resistance of the MR layer whenever there is a change in the external magnetic field H. Since the sections of the MR layer located between the opposing slanted edges are effected by the single magnetic domain in a direction having the angle .phi. relative to the direction of the applied current, a reduction in Barkhausen noise can be achieved.

摘要翻译： 磁传感器包括磁阻效应层（MR层），永磁体层叠置在永磁体层上，永磁体层具有相对于电流方向I形成角度φ的倾斜边。永磁体的电阻 层高于MR层。 由于相对的倾斜边缘的N和S极性，位于相对的倾斜边缘之间的MR层的部分被角度phi磁化，使得形成单个磁畴。 磁化方向M相对于电流I为大约45°的角度φ，因此，只要外部磁场H发生变化，就可以检测到MR层的电阻的变化 由于位于相对的倾斜边缘之间的MR层的相对于所施加电流的方向具有角度phi的方向由单个磁畴实现，所以可以实现巴克豪森噪声的降低。

公开(公告)号：US5027238A

公开(公告)日：1991-06-25

申请号：US564934

申请日：1990-08-09

申请人： Takahiro Konishi ,  Toshihiro Kuriyama

发明人： Takahiro Konishi ,  Toshihiro Kuriyama

IPC分类号： G11B21/21 ,  G11B5/48

CPC分类号： G11B5/4826

摘要： A floating type magnetic head for a magnetic disk drive. A slider, in which a magnetic core is incorporated, is fixed by adhesive to a gimbal with a hole formed on the side of the gimbal in contact with the magnetic core. Deformation of the magnetic core by the adhesive is prevented and the position of the magnetic core with respect to the magnetic disk is stabilized without deforming the magnetic core.

摘要翻译： 用于磁盘驱动器的浮动式磁头。 通过粘合剂将磁芯结合在一起的滑动件通过形成在与磁芯接触的万向架侧面上的孔的万向节固定。 防止了磁芯的变形，使磁芯相对于磁盘的位置稳定而不使磁芯变形。

公开(公告)号：US4768118A

公开(公告)日：1988-08-30

申请号：US90611

申请日：1987-08-28

申请人： Toshihiro Kuriyama

发明人： Toshihiro Kuriyama

IPC分类号： G11B5/127 ,  G11B5/187 ,  G11B5/23 ,  G11B5/133 ,  G11B5/147 ,  G11B5/265

CPC分类号： G11B5/1878 ,  G11B5/23

摘要： A floating-type magnetic head comprises a leading magnetic core, a trailing magnetic core, and a thin layer of a magnetic metal formed between the cores. A first magnetic gap is formed between the leading core and the thin film. A second magnetic gap is formed between the thin layer and the trailing core. The depth Gd of the end surface of the leading core is set to a value less than 10 microns. The depth h of the end surface of the trailing core is set to a value exceeding 100 microns.

摘要翻译： 浮动式磁头包括在芯之间形成的引导磁芯，后磁芯和形成有磁性金属的薄层。 在引导芯和薄膜之间形成第一磁隙。 在薄层和拖尾芯之间形成第二磁隙。 引导芯的端面的深度Gd设定为小于10微米的值。 尾芯的端面的深度h设定为超过100微米的值。