摘要:
A semiconductor device includes: a semiconductor substrate; an element region having a semiconductor element including an impurity layer and a trench, wherein the impurity layer is disposed in the trench, and wherein the trench is disposed on a main surface of the substrate; and a field region disposed around the element region. The trench is an aggregation of a plurality of stripe line trenches so that the element region has a polygonal shape. The field region includes a dummy trench disposed along with one side of the polygonal shape on a periphery of the element region. The dummy trench has a width and a longitudinal direction, which are equal to those of the trench. The field region further includes an impurity layer disposed in the dummy trench.
摘要:
A semiconductor device includes: a semiconductor substrate; an element region having a semiconductor element including an impurity layer and a trench, wherein the impurity layer is disposed in the trench, and wherein the trench is disposed on a main surface of the substrate; and a field region disposed around the element region. The trench is an aggregation of a plurality of stripe line trenches so that the element region has a polygonal shape. The field region includes a dummy trench disposed along with one side of the polygonal shape on a periphery of the element region. The dummy trench has a width and a longitudinal direction, which are equal to those of the trench. The field region further includes an impurity layer disposed in the dummy trench.
摘要:
A first trench is formed in a surface of an n+-type semiconductor substrate that forms a source region. A p-type base region, an n−-type drift region, and an n+-type drain region are deposited in this order in the first trench using epitaxial growth. A second trench extending from the source region to the drift region through the base region is formed in the surface. A gate insulating film and a gate electrode are formed on a surface defining the second trench. The n+-type drain region has a location where growing surfaces come together in epitaxial growth and where a defect is likely to occur, and the gate electrode lacks such a location and thus avoids an increase in normalized ON resistance. Therefore, the breakdown voltage remains high without increasing the ON resistance.
摘要翻译:在形成源极区域的n +型半导体衬底的表面中形成第一沟槽。 使用外延生长,在第一沟槽中依次沉积p型基极区域,n +型漂移区域和n +型漏极区域。 在表面上形成从源极区域延伸穿过基底区域到漂移区域的第二沟槽。 在限定第二沟槽的表面上形成栅极绝缘膜和栅电极。 n +型漏极区域具有生长表面在外延生长中并且可能发生缺陷的位置,并且栅电极缺少这样的位置,因此避免了归一化导通电阻的增加。 因此,在不增加导通电阻的情况下,击穿电压保持高电平。
摘要:
It is an object of this invention to allow detection of multiple paper-conveying of an original sheet in image reading or forming operation and facilitate a recovery operation. An automatic original feeding apparatus of this invention uses pressure sensitive conductive rubber in a feeding roller, and changes in length and thickness of a sheet are changed into electrical signals, so that the conveyed state such as multiple paper-conveying of the sheet can be detected.
摘要:
An X-ray image diagnosis apparatus includes an imaging unit that supports an X-ray generation unit and an X-ray detection unit in such a way that the units face each other and is possible to take an image of a subject placed on a top panel of a bed; a control unit that performs control in such a way that a step movement process of at least one of the imaging unit and top panel is carried out and images of the subject are taken at a plurality of stages; and an image processing unit that processes image data taken at a plurality of the stages. The control unit sets a plurality of regions of interest in an imaging area of the subject when an image is taken after a contrast medium is injected into the subject, measures a change of an image level in the region of interest to detect a flow of the contrast medium, and makes at least one of the imaging unit and top panel move to the next imaging stage based on the detection result.
摘要:
A semiconductor device includes: a first semiconductor layer; a PN column layer having first and second column layers; and a second semiconductor layer. Each of the first and second column layers includes first and second columns alternately arranged along with a horizontal direction. The first and second column layers respectively have first and second impurity amount differences defined at a predetermined depth by subtracting an impurity amount in the second column from an impurity amount in the first column. The first impurity amount difference is constant and positive. The second impurity amount difference is constant and negative.
摘要:
A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers.
摘要:
An image forming apparatus applies a shading correction to an image read from a white reference board 18, and determines presence or absence of stripe-like noise in the image read therefrom after applying the shading correction. The apparatus exposes an area at which there is no noise in the white reference board 18 to create a white reference value for a shading correction for reading a document after that time.
摘要:
The present invention provides a technology by which a fairly good monochromatic image without any picture quality deterioration can be obtained from a color image original. An image forming apparatus according to the present invention comprises: a luminance information acquiring portion adapted for acquiring luminance information of pixels forming an image; a color information acquiring portion adapted for acquiring color information of pixels forming the image; a region discriminating portion adapted for discriminating on the image a specific region and a peripheral region adjacent to said specific region based on the acquired luminance information and color information; a luminance information correcting portion adapted for executing a correction of said luminance information of pixels in said specific region or said peripheral region based on a predetermined correction rule corresponding to said specific region or the peripheral region and further corresponding to said color information of the pixels; and a monochromatic image producing portion adapted for producing a monochromatic image reflecting a correction content of said luminance information based on said image.
摘要:
The present invention provides a technology by which a high quality monochromatic image without any picture quality deterioration can be obtained from a color image original. An image processing apparatus according to the present invention, comprising: a hue information acquiring portion adapted for acquiring hue information regarding pixels forming an image; a concentration information acquiring portion adapted for acquiring hue concentration information regarding pixels forming the image; and a deterioration determining portion, wherein, in the event that a rate of the number of pixels having the same hue and color concentration as those of pixels forming the image is higher than a predetermined threshold value based on the hue information and the hue concentration information thus acquired, the deterioration determining portion is adapted for determining the possibility of occurrence of picture quality deterioration to be high when the image is transformed into a monochromatic image.