Semiconductor device for reducing and/or preventing current collapse
    64.
    发明授权
    Semiconductor device for reducing and/or preventing current collapse 有权
    用于减少和/或防止电流崩溃的半导体装置

    公开(公告)号:US08390029B2

    公开(公告)日:2013-03-05

    申请号:US12867427

    申请日:2009-01-23

    IPC分类号: H01L29/00

    摘要: A semiconductor device includes an undoped GaN layer (103) formed on a substrate (101), an undoped AlGaN layer (104) formed on the undoped GaN layer (103) and having a band gap energy larger than that of the undoped GaN layer (103), a p-type AlGaN layer (105) and a high-concentration p-type GaN layer (106) formed on the undoped AlGaN layer (104), and an n-type AlGaN layer (107) formed on the high-concentration p-type GaN layer (106). A gate electrode (112) which makes ohmic contact with the high-concentration p-type GaN layer (106) is formed on the high-concentration p-type GaN layer (106) in a region thereof exposed through an opening (107a) formed in the n-type AlGaN layer (107).

    摘要翻译: 半导体器件包括形成在衬底(101)上的未掺杂的GaN层(103),形成在未掺杂的GaN层(103)上并且具有比未掺杂的GaN层的带隙能量大的带隙能量的未掺杂的AlGaN层(104) 103),形成在未掺杂的AlGaN层(104)上的p型AlGaN层(105)和高浓度p型GaN层(106)以及形成在高掺杂AlGaN层上的n型AlGaN层(107) 浓度p型GaN层(106)。 在高浓度p型GaN层(106)上形成与高浓度p型GaN层(106)欧姆接触的栅电极(112),其形成在通过形成的开口(107a)的部分露出的区域 在n型AlGaN层(107)中。

    Input system for vehicle
    65.
    发明授权
    Input system for vehicle 有权
    车辆输入系统

    公开(公告)号:US08306693B2

    公开(公告)日:2012-11-06

    申请号:US12699306

    申请日:2010-02-03

    申请人: Tsuyoshi Tanaka

    发明人: Tsuyoshi Tanaka

    IPC分类号: G06F7/00

    摘要: An input system for vehicle includes an actuator operable by an operator, a controller outputting a display signal in response to an operation on the actuator, and a display to display an image based on the display signals. The controller outputs a control signal to a target device that performs one or more functions. The image includes a graphic object indicating the actuator, one or more arrows located around the graphic object, and one or more function indicators located in one or more directions indicated by the one or more arrows, respectively. The one or more function indicators indicate the one or more functions, respectively. The controller is operable to, upon the operator operating the actuator in the direction corresponding to an arrow out of the one or more arrows, select a function indicator out of the one or more function indicators located in a direction indicated by the arrow, and to control the target device to perform a function out of the one or more functions indicated by the selected function indicator. The operator can operate the input system reliably.

    摘要翻译: 一种用于车辆的输入系统包括由操作者操作的致动器,响应于致动器上的操作而输出显示信号的控制器,以及基于显示信号显示图像的显示器。 控制器向执行一个或多个功能的目标设备输出控制信号。 图像包括指示致动器的图形对象,位于图形对象周围的一个或多个箭头以及位于一个或多个箭头所指示的一个或多个方向上的一个或多个功能指示器。 一个或多个功能指示器分别指示一个或多个功能。 控制器可操作以在操作者对与一个或多个箭头中的箭头相对应的方向操作致动器时,从位于箭头所指示的方向上的一个或多个功能指示器中选择功能指示器,并且 控制目标设备执行由所选功能指示器指示的一个或多个功能。 操作员可以可靠地操作输入系统。

    CONTROL METHOD FOR VIRTUAL MACHINE AND MANAGEMENT COMPUTER
    66.
    发明申请
    CONTROL METHOD FOR VIRTUAL MACHINE AND MANAGEMENT COMPUTER 有权
    虚拟机和管理计算机的控制方法

    公开(公告)号:US20120254445A1

    公开(公告)日:2012-10-04

    申请号:US13437963

    申请日:2012-04-03

    IPC分类号: G06F15/173

    CPC分类号: G06F9/5077 G06F9/5088

    摘要: A method of controlling a virtual computer system, the method comprising: obtaining, by a management computer, a load value for each of the plurality of groups, and comparing the load value against a preset threshold; identifying, a group whose load value exceeds the preset threshold as a first group; selecting, a second group from the plurality of groups minus the first group; identifying, as a migration target computer, a given physical computer out of physical computers that run virtual computers allocated to the second group; migrating, virtual computers that are provided by the migration target computer to other physical computers within the second group; changing, settings of the network switch in a manner that enables the migration target computer to operate in the first group; adding, the migration target computer to the first group; and controlling, the migration target computer to run virtual computers of the first group.

    摘要翻译: 一种控制虚拟计算机系统的方法,所述方法包括:由管理计算机获取所述多个组中的每个组的负载值,并将所述负载值与预设阈值进行比较; 识别作为第一组的负载值超过预设阈值的组; 从多个组中减去第一组的第二组; 从运行分配给第二组的虚拟计算机的物理计算机中识别作为迁移目标计算机的给定物理计算机; 将由迁移目标计算机提供的虚拟计算机迁移到第二组内的其他物理计算机; 以使移动目标计算机能够在第一组中运行的方式来改变网络交换机的设置; 将迁移目标计算机添加到第一组; 并控制迁移目标计算机运行第一组的虚拟计算机。

    Nitride semiconductor device and method for fabricating the same
    68.
    发明授权
    Nitride semiconductor device and method for fabricating the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US08129748B2

    公开(公告)日:2012-03-06

    申请号:US11878352

    申请日:2007-07-24

    IPC分类号: H01L29/66

    摘要: A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

    摘要翻译: 氮化物半导体器件包括:第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域,以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

    Reading method of nonvolatile semiconductor memory device
    69.
    发明授权
    Reading method of nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件的读取方法

    公开(公告)号:US08120953B2

    公开(公告)日:2012-02-21

    申请号:US12654062

    申请日:2009-12-09

    申请人: Tsuyoshi Tanaka

    发明人: Tsuyoshi Tanaka

    IPC分类号: G11C16/04

    CPC分类号: G11C11/5642 G11C16/26

    摘要: Reading methods of a nonvolatile semiconductor memory device are described herein. Methods may include supplying, to a word line, one of a voltage corresponding to a highest reading level or a voltage having a level higher than a first reading level of a read operation to be performed on the word line, and subsequently supplying a voltage of the first reading level to the word line and performing the read operation.

    摘要翻译: 本文描述了非易失性半导体存储器件的读取方法。 方法可以包括向字线提供对应于最高读取电平的电压或具有高于要在字线上执行的读取操作的第一读取电平的电平的电压之一,并且随后提供 到字线的第一读取电平并执行读取操作。