Thin-film acoustically-coupled transformer
    61.
    发明授权
    Thin-film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号:US06946928B2

    公开(公告)日:2005-09-20

    申请号:US10699481

    申请日:2003-10-30

    Abstract: The acoustically-coupled transformer includes first and second stacked bulk acoustic resonators (SBARs), each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. In one embodiment, the acoustic decoupler comprises a layer of decoupling material has having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength of an acoustic wave having a frequency equal to the transformer's center frequency. In another embodiment, the acoustic decoupler comprises a Bragg stack. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals, second terminals, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR and the first terminals, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR and the second terminals.

    Abstract translation: 声耦合变压器包括第一和第二堆叠的体声波谐振器(SBAR),每个具有堆叠的一对薄膜体声共振器(FBAR),在它们之间具有声耦合器。 在一个实施例中,声学解耦器包括去耦材料层具有等于频率等于变压器中心频率的声波波长四分之一的奇数整数倍的标称厚度。 在另一个实施例中,声分离器包括布拉格堆叠。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有第一端子,第二端子,将第一SBAR的一个FBAR与第二SBAR的一个FBAR和第一端子连接的第一电路,以及将第一SBAR的另一个FBAR连接到另一个FBAR的第二电路 的第二个SBAR和第二个终端。

    Method of fabricating a semiconductor device and an apparatus embodying the method
    62.
    发明授权
    Method of fabricating a semiconductor device and an apparatus embodying the method 失效
    制造半导体器件的方法和体现该方法的装置

    公开(公告)号:US06794958B2

    公开(公告)日:2004-09-21

    申请号:US10202974

    申请日:2002-07-25

    CPC classification number: H03H9/105 H03H9/587

    Abstract: A method for fabricating an apparatus, and an apparatus embodying the same is disclosed. First a device chip having circuit elements is fabricated. Next, a cap with a cap circuit is fabricated. Finally, the cap is placed on the device chip to connect a first contact point with a second contact point using the connector on the cap. The apparatus includes a device chip and a cap. The device chip has the first contact point and a second contact point. The cap has the cap circuit that, when the cap is placed on the device chip, connects the first contact point with the second contact point.

    Abstract translation: 公开了一种制造装置的方法及其体现方法。 首先,制造具有电路元件的器件芯片。 接下来,制造具有盖电路的盖。 最后,使用盖上的连接器将盖放置在设备芯片上以将第一接触点与第二接触点连接。 该装置包括装置芯片和盖。 器件芯片具有第一接触点和第二接触点。 盖具有帽盖电路,当帽被放置在器件芯片上时,将第一接触点与第二接触点连接。

    Passband filter having an asymmetrical filter response
    63.
    发明授权
    Passband filter having an asymmetrical filter response 失效
    带通滤波器具有不对称滤波器响应

    公开(公告)号:US06462631B2

    公开(公告)日:2002-10-08

    申请号:US09783773

    申请日:2001-02-14

    CPC classification number: H03H9/605

    Abstract: A filter, such as a transmit filter of a duplexer, includes an array of acoustic resonators that cooperate to establish an asymmetrically shaped filter response over a target frequency passband. The acoustic resonators are preferably film bulk acoustic resonators (FBARs). The filter response defines an insertion loss profile in which a minimum insertion loss within the target passband is located at or near a first end of the frequency passband, while the maximum insertion loss is located at or near the opposite end of the frequency passband. In the transmit filter embodiment, the minimum insertion loss is at or near the high frequency end of the filter response, which is tailored by selectively locating poles and zeros of the array of FBARs.

    Abstract translation: 诸如双工器的发射滤波器的滤波器包括声谐振器阵列,其协作以在目标频率通带上建立不对称形状的滤波器响应。 声谐振器优选为薄膜体声波谐振器(FBAR)。 滤波器响应定义了插入损耗曲线,其中目标通带内的最小插入损耗位于频率通带的第一端处或接近频率通带的第一端,而最大插入损耗位于或接近频率通带的相对端。 在发射滤波器实施例中,最小插入损耗处于或接近滤波器响应的高频端,其通过选择性地定位FBAR阵列的极点和零点来定制。

    Bulk acoustic resonator perimeter reflection system
    64.
    发明授权
    Bulk acoustic resonator perimeter reflection system 有权
    体声共振器周边反射系统

    公开(公告)号:US06424237B1

    公开(公告)日:2002-07-23

    申请号:US09746525

    申请日:2000-12-21

    CPC classification number: H03H9/173 H03H9/0211 H03H9/02118 H03H9/132 Y10T29/42

    Abstract: A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.

    Abstract translation: 具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。 谐振器包括第一电极,压电材料和第二电极。 第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。 压电材料设置在基板的顶表面上并在第一电极上方,第二电极设置在压电材料上。 第二电极包括位于凹部上方的部分。 位于凹部上方的第二电极的部分具有至少一个边缘,该边缘与凹陷的对应边缘偏移第二距离,以限定它们之间的第二区域。 由于位于两个区域的不同材料,第一和第二区域具有不同的阻抗。 此外,第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长,使得区域边缘的反射构造地干扰以最大化谐振器的反射率。

    Microcap wafer-level package
    65.
    发明授权
    Microcap wafer-level package 有权
    微型晶圆级封装

    公开(公告)号:US06265246B1

    公开(公告)日:2001-07-24

    申请号:US09359844

    申请日:1999-07-23

    Abstract: A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist, semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

    Abstract translation: 提供了一种微型晶片级封装,其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂,半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配,外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内,并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上,以将焊垫冷却焊接到焊盘,并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下,直到阱变成通孔,其提供对封装内的接合焊盘的访问,但是在气密密封的体积外部,用于从微器件利用系统连接引线。

    RF-tags utilizing thin film bulk wave acoustic resonators
    66.
    发明授权
    RF-tags utilizing thin film bulk wave acoustic resonators 失效
    使用薄膜体声波谐振器的RF标签

    公开(公告)号:US5883575A

    公开(公告)日:1999-03-16

    申请号:US909677

    申请日:1997-08-12

    Abstract: An RF tag having an antenna for receiving a RF signal having a frequency band between first and second frequencies and an acoustical resonator having a resonant frequency related to the first and second frequencies. The acoustical resonator has first and second electrodes that sandwich a layer of piezoelectric material. The antenna is connected to one of these electrodes. The resonator filters the signal received on the antenna. The filter can function either as a notch filter or as a bandpass filter. A resonator that acts as a bandpass filter includes a third electrode and a second layer piezoelectric material sandwiched between the second electrode and the third electrode. A frequency multiplier circuit may be incorporated in the RF tag to provide a response signal that occupies a frequency band at a frequency above the second frequency. In one embodiment of the present invention, multiple resonators having different resonant frequencies are utilized to generate a response code. In one embodiment of the present invention, the resonators are suspended on a support member over a substrate at locations on the support member which differ in thickness.

    Abstract translation: 一种具有用于接收具有第一和第二频率之间的频带的RF信号的天线的RF标签和具有与第一和第二频率相关的共振频率的声学谐振器。 声谐振器具有夹着压电材料层的第一和第二电极。 天线连接到这些电极之一。 谐振器对天线上接收到的信号进行滤波。 滤波器可以用作陷波滤波器或带通滤波器。 用作带通滤波器的谐振器包括夹在第二电极和第三电极之间的第三电极和第二层压电材料。 频率乘法器电路可并入RF标签中以提供以高于第二频率的频率占据频带的响应信号。 在本发明的一个实施例中,利用具有不同谐振频率的多个谐振器来产生响应码。 在本发明的一个实施例中,谐振器在不同厚度的支撑构件上的位置处悬挂在基板上的支撑构件上。

    Tunable thin film acoustic resonators and method for making the same
    67.
    发明授权
    Tunable thin film acoustic resonators and method for making the same 失效
    可调谐薄膜声谐振器及其制造方法

    公开(公告)号:US5587620A

    公开(公告)日:1996-12-24

    申请号:US171227

    申请日:1993-12-21

    Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si.sub.3 N.sub.4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.

    Abstract translation: 包括夹着PZ层的顶部和底部电极的声学谐振器。 可以通过利用声谐振器中包含的加热元件和/或通过调节调谐层的厚度来调整声学谐振器的共振频率。 在本发明的优选实施例中,电极包括Mo层。 本发明的一个实施方案构造在Si 3 N 4膜上。 本发明的第二实施例构造成使得其悬挂在金属柱上的基板上。 在本发明的优选实施例中,通过使电极中的应力最小化的方法来沉积电极。

    System and circuits using Josephson junctions
    68.
    发明授权
    System and circuits using Josephson junctions 失效
    使用JOSEPHSON JUNCTIONS的系统和电路

    公开(公告)号:US5191236A

    公开(公告)日:1993-03-02

    申请号:US554228

    申请日:1990-07-16

    Inventor: Richard C. Ruby

    CPC classification number: H03B15/00 Y10S505/854 Y10S505/861

    Abstract: An electronic clock has a single Josephson junction connected in parallel to a resonant circuit, which is a delay line with a matching resistance at the input end to provide series termination. The opposite end of the delay line is an open end to reflect pulses, and the pulse transit time on the line determines the clock rate. A zero crossing detector is provided to initiate the clock operation when an input signal rises above a given threshold, and a reset circuit is included to turn off the clock when the input signal falls below this threshold. A flip-flop circuit allows the clock to be turned on by alternate initiating signal pulses. A modification includes a pulse rejuvenating circuit at the end of the delay line to offset pulse degradation. All of the circuits are fabricated with Josephson junction elements, and the zero crossing detector, reset circuit, flip-flop circuit and pulse rejuvenator circuits include dc-SQUID's. The clock is capable of operation at frequencies up to 100 GHz and can sample input single frequencies as high as 15 GHz.

    Chip carrier
    69.
    发明授权
    Chip carrier 失效
    芯片载体

    公开(公告)号:US4782381A

    公开(公告)日:1988-11-01

    申请号:US062005

    申请日:1987-06-12

    Abstract: A chip carrier for carrying integrated circuit chips is provided. Instead of placing individual circuit components either in the chips or next to them, the components are placed in or near the substrate of the chip carrier. This frees up expensive real-estate for logic chips at the chip level presently occupied by the components. The substrate of the carrier acts as a large heat sink to dissipate power generated by the components.

    Abstract translation: 提供了用于承载集成电路芯片的芯片载体。 代替将单独的电路组件放置在芯片中或其旁边,将组件放置在芯片载体的衬底中或附近。 这可以在目前由组件占用的芯片级别上释放昂贵的逻辑芯片。 载体的基板用作大的散热器,以消散由部件产生的电力。

    Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector
    70.
    发明授权
    Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector 有权
    用于加速度计和陀螺仪的电容检测器,带电容检测器的加速度计和陀螺仪

    公开(公告)号:US09069005B2

    公开(公告)日:2015-06-30

    申请号:US13162883

    申请日:2011-06-17

    Inventor: Richard C. Ruby

    CPC classification number: G01P15/125 G01C19/5776 G01P15/0802 G01P2015/0831

    Abstract: A capacitance-to-frequency converter is configured to convert a difference between first and second capacitances produced of a teeter-totter capacitive transducer as a result of a rotational force being applied to the teeter-totter capacitive transducer to a first signal having a first frequency that is a function of the rotational force, and to convert a sum of the first and second capacitances produced as a result of an acceleration force to a second signal having a second frequency that is a function of the acceleration force. The capacitance-to-frequency converter includes a first oscillator having a first oscillator frequency that changes in response to a change in the first capacitance; a second oscillator having a second oscillator frequency that changes in response to a change in the second capacitance; and a mixer having first and second mixer inputs connected outputs of the first and second oscillators.

    Abstract translation: 电容 - 频率转换器被配置为转换由跷跷板电容式换能器产生的第一和第二电容之间的差异,这是由于旋转力被施加到跷跷板电容换能器而具有第一频率的第一信号 这是旋转力的函数,并且将作为加速力的结果产生的第一和第二电容的和转换成具有作为加速力的函数的第二频率的第二信号。 电容 - 频率转换器包括具有响应于第一电容的变化而改变的第一振荡器频率的第一振荡器; 具有响应于所述第二电容的变化而改变的第二振荡器频率的第二振荡器; 以及具有连接第一和第二振荡器的输出的第一和第二混频器输入的混频器。

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