Method of fabricating a semiconductor device and an apparatus embodying the method
    1.
    发明授权
    Method of fabricating a semiconductor device and an apparatus embodying the method 失效
    制造半导体器件的方法和体现该方法的装置

    公开(公告)号:US06794958B2

    公开(公告)日:2004-09-21

    申请号:US10202974

    申请日:2002-07-25

    CPC classification number: H03H9/105 H03H9/587

    Abstract: A method for fabricating an apparatus, and an apparatus embodying the same is disclosed. First a device chip having circuit elements is fabricated. Next, a cap with a cap circuit is fabricated. Finally, the cap is placed on the device chip to connect a first contact point with a second contact point using the connector on the cap. The apparatus includes a device chip and a cap. The device chip has the first contact point and a second contact point. The cap has the cap circuit that, when the cap is placed on the device chip, connects the first contact point with the second contact point.

    Abstract translation: 公开了一种制造装置的方法及其体现方法。 首先,制造具有电路元件的器件芯片。 接下来,制造具有盖电路的盖。 最后,使用盖上的连接器将盖放置在设备芯片上以将第一接触点与第二接触点连接。 该装置包括装置芯片和盖。 器件芯片具有第一接触点和第二接触点。 盖具有帽盖电路,当帽被放置在器件芯片上时,将第一接触点与第二接触点连接。

    Temperature controlled acoustic resonator
    3.
    发明授权
    Temperature controlled acoustic resonator 有权
    温度控制声谐振器

    公开(公告)号:US09154103B2

    公开(公告)日:2015-10-06

    申请号:US13361724

    申请日:2012-01-30

    Inventor: Richard C. Ruby

    CPC classification number: H03H9/172 H03H3/02 H03H9/02102 H03H9/08 H03H9/54

    Abstract: An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil.

    Abstract translation: 声谐振器装置包括环形声谐振器,加热器线圈和热传感器。 环形声谐振器位于形成在声谐振器装置的衬底中的沟槽之上。 加热器线圈围绕环形声谐振器的周边设置,加热器线圈包括被配置为接收加热器电流的电阻器。 热传感器被配置为响应于加热器线圈的温度来调节加热器电流。

    Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator
    9.
    发明授权
    Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator 有权
    衬底安装的体声波谐振器的腔体跨越底部电极

    公开(公告)号:US06384697B1

    公开(公告)日:2002-05-07

    申请号:US09566868

    申请日:2000-05-08

    Inventor: Richard C. Ruby

    CPC classification number: H03H9/587 H03H3/02 H03H3/04 H03H9/173 H03H9/585

    Abstract: A filter formed of acoustic resonators, where each resonator has its own cavity and a bottom electrode that spans the entirety of the cavity, so that the bottom electrode has an unsupported interior region surrounded by supported peripheral regions. In the preferred embodiment, the cavity is formed by etching a depression into the substrate, filling the depression with a sacrificial material, depositing the piezoelectric and electrode layers that define an FBAR or SBAR, and then removing the sacrificial material from the depression. Also in the preferred embodiment, the sacrificial material is removed via release holes that are limited to the periphery of the depression. Preferably, the bottom electrode is the only electrode that spans the cavity, thereby limiting the formation of parasitic FBARs or SBARs. In one embodiment, the bottom electrode includes a serpentine edge that leaves a portion of one side of the cavity free of overlap by the bottom electrode, so that a top electrode may overlap this portion. Thus, the top and bottom electrodes can overlap the same side without sandwiching the piezoelectric layer outside of the unsupported interior region.

    Abstract translation: 由声谐振器形成的滤波器,其中每个谐振器具有其自身的空腔和跨越整个空腔的底部电极,使得底部电极具有被支撑的周边区域包围的无支撑的内部区域。 在优选实施例中,通过将凹陷蚀刻到基板中,用牺牲材料填充凹陷,沉积限定FBAR或SBAR的压电层和电极层,然后从凹陷中去除牺牲材料来形成空腔。 同样在优选实施例中,通过限制在凹陷周边的释放孔去除牺牲材料。 优选地,底部电极是跨越空腔的唯一电极,从而限制寄生FBAR或SBAR的形成。 在一个实施例中,底部电极包括使空腔的一侧的一部分离开由底部电极重叠的蛇形边缘,使得顶部电极可能与该部分重叠。 因此,顶部和底部电极可以重叠在同一侧,而不将压电层夹在未支撑的内部区域之外。

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