Display device having optical input function
    62.
    发明申请
    Display device having optical input function 审中-公开
    具有光输入功能的显示装置

    公开(公告)号:US20050237313A1

    公开(公告)日:2005-10-27

    申请号:US11095512

    申请日:2005-04-01

    申请人: Masahiro Yoshida

    发明人: Masahiro Yoshida

    摘要: In order to detect pressure of a light source device against a display screen of a display device, the light source device changes an area of a light receiving region on the display screen in response to a degree of pressure of a tip of the light source device against the display screen. Meanwhile, a signal processing unit of the display device calculates a distance between a light transmission unit of the light source device and the display screen. By using this distance, the degree of pressure of can be detected. Moreover, in order to prevent malfunction attributable to outside environment light and to reduce power consumption of a light source unit of the light source device, the light source unit is configured not to output light when the tip of the light source device is not pressed against the display screen.

    摘要翻译: 为了检测光源装置对显示装置的显示屏的压力,光源装置响应于光源装置的尖端的压力程度改变显示屏上的光接收区域的面积 对着显示屏。 同时,显示装置的信号处理单元计算光源装置的光传输单元和显示屏之间的距离。 通过使用该距离,可以检测压力的程度。 此外,为了防止由外部环境光引起的故障,并且降低光源装置的光源单元的功耗,光源单元被配置为在光源装置的末端未被按压时不输出光 显示屏幕。

    Method for manufacturing semiconductor device having thick insulating layer under gate side walls
    63.
    发明申请
    Method for manufacturing semiconductor device having thick insulating layer under gate side walls 有权
    在栅极侧壁上具有厚绝缘层的半导体器件的制造方法

    公开(公告)号:US20050221562A1

    公开(公告)日:2005-10-06

    申请号:US11136419

    申请日:2005-05-25

    摘要: A semiconductor device includes a semiconductor substrate, a silicon oxide layer formed on the semiconductor substrate, a gate electrode formed over the silicon oxide layer, and a side wall structure formed over the silicon oxide layer and adjacent the gate electrode. In one configuration, the thickness of the silicon oxide layer under the sidewall structure is thicker than the thickness of the silicon oxide layer under the gate electrode.

    摘要翻译: 半导体器件包括半导体衬底,形成在半导体衬底上的氧化硅层,形成在氧化硅层上的栅电极,以及形成在氧化硅层上并与栅电极相邻的侧壁结构。 在一种构造中,侧壁结构下方的氧化硅层的厚度比栅电极下方的氧化硅层的厚度厚。

    Developing apparatus, cartridge and image forming apparatus
    65.
    发明申请
    Developing apparatus, cartridge and image forming apparatus 有权
    显影装置,暗盒和成像装置

    公开(公告)号:US20050180784A1

    公开(公告)日:2005-08-18

    申请号:US11002948

    申请日:2004-12-03

    申请人: Masahiro Yoshida

    发明人: Masahiro Yoshida

    CPC分类号: G03G15/0812

    摘要: A developing apparatus having a developer carrying member for carrying a developer thereon and developing an electrostatic image formed on an image bearing member with a developer, a developer layer thickness regulating member provided in contact with the developer carrying member for regulating the thickness of the layer of the developer carried on the developer carrying member, and an electrically conductive particle provided in the portion of contact between the developer carrying member and the developer layer thickness regulating member, in a state in which the developer does not exist between the developer carrying member and the developer layer thickness regulating member.

    摘要翻译: 一种显影装置,具有用于在其上承载显影剂的显影剂承载构件,并且利用显影剂将形成在图像承载部件上的静电图像显影,显影剂层厚度调节部件设置成与显影剂承载部件接触,用于调节 携带在显影剂承载构件上的显影剂和设置在显影剂承载构件和显影剂层厚度调节构件之间的接触部分中的导电颗粒,其中显影剂不存在于显影剂承载构件和显影剂承载构件之间 显影剂层厚度调节构件。

    Display device and imaging method
    66.
    发明申请
    Display device and imaging method 有权
    显示设备和成像方法

    公开(公告)号:US20050104877A1

    公开(公告)日:2005-05-19

    申请号:US10988599

    申请日:2004-11-16

    CPC分类号: G06F3/0412 G06F3/0488

    摘要: A display device has a pixel array part having display elements provided inside of pixels formed in vicinity of cross points of signal lines and scanning lines aligned in matrix form; image capture circuits provided corresponding to the display elements, each including an optical sensor which picks up image at prescribed range of an imaging subject; and an image capture processing unit which generates ultimate image capture data based on result of having picked up images a plurality of times while changing image capture condition except for display color, with respect to each of M kinds of display colors.

    摘要翻译: 显示装置具有像素阵列部分,其具有设置在形成在信号线和扫描线的交叉点附近的像素内部的显示元件,扫描线以矩阵形式排列; 对应于显示元件提供的图像捕获电路,每个包括在成像对象的规定范围内拾取图像的光学传感器; 以及图像拍摄处理单元,相对于M种显示颜色中的每一种,基于在改变除了显示颜色之外的图像拍摄条件的同时多次拍摄图像的结果来生成最终图像拍摄数据。

    A SEMICONDUCTOR DEVICE INCLUDING A MOSFET WITH NITRIDE SIDE WALL
    67.
    发明申请
    A SEMICONDUCTOR DEVICE INCLUDING A MOSFET WITH NITRIDE SIDE WALL 有权
    包括具有氮化物侧壁的MOSFET的半导体器件

    公开(公告)号:US20050087799A1

    公开(公告)日:2005-04-28

    申请号:US10992082

    申请日:2004-11-19

    摘要: A semiconductor device includes a semiconductor substrate, a gate insulating layer, a gate electrode structure and a side wall structure. The gate insulating layer is formed on the semiconductor substrate. The gate electrode structure is formed on the gate insulating layer, and includes a lower gate electrode layer and a cap gate layer. The side wall structure includes a nitride side wall spacer, and an oxide layer formed between the semiconductor substrate and the nitride side wall spacer and between the lower gate electrode layer and the nitride side wall spacer. A thickness of the oxide layer is greater than a thickness of the gate insulating layer, so as to prevent diffusion of nitrogen from the nitride side wall spacer to the semiconductor substrate. A height of the gate electrode structure is substantially equal to a height of the side wall structure after completion of the semiconductor device.

    摘要翻译: 半导体器件包括半导体衬底,栅极绝缘层,栅电极结构和侧壁结构。 栅绝缘层形成在半导体衬底上。 栅电极结构形成在栅极绝缘层上,并且包括下栅极电极层和盖栅极层。 侧壁结构包括氮化物侧壁间隔物和形成在半导体衬底和氮化物侧壁间隔物之间​​以及下部栅极电极层和氮化物侧壁间隔物之间​​的氧化物层。 氧化物层的厚度大于栅极绝缘层的厚度,以防止氮从氮化物侧壁间隔物扩散到半导体衬底。 栅电极结构的高度与半导体器件完成后的侧壁结构的高度基本相等。

    Semiconductor storage device and refresh control method thereof
    68.
    发明申请
    Semiconductor storage device and refresh control method thereof 有权
    半导体存储装置及其刷新控制方法

    公开(公告)号:US20050047239A1

    公开(公告)日:2005-03-03

    申请号:US10500400

    申请日:2002-12-25

    CPC分类号: G11C11/40603 G11C11/406

    摘要: Refresh of memory cells is performed periodically by a refresh timer, and collision between memory access and memory refresh is avoided. When memory access occurs, an F/F 163 is set by a one shot pulse from an OS circuit 161, a memory access request is inputted to a memory accessing pulse generator circuit 171 through a NOR gate 167, and a latch control signal LC and an enable signal REN are outputted. When a refresh request from the refresh timer is inputted to an AND gate 168 during the memory access, the output of the NOR gate 167 is at the “L” level, and the refresh request is blocked by the AND gate 168. Thereafter, at the time when the latch control signal LC is turned into the “L” level, F/Fs 163, 164 and 165 are reset, the output of the NOR gate 167 is turned into the “H” level, the refresh request is inputted to a refreshing pulse generator circuit 170, and a refresh enable signal RERF is outputted.

    摘要翻译: 通过刷新定时器周期性地执行存储器单元的刷新,并避免存储器访问和存储器刷新之间的冲突。 当存储器访问发生时,通过来自OS电路161的单触发脉冲设置F / F 163,通过NOR门167将存储器访问请求输入到存储器访问脉冲发生器电路171,以及锁存控制信号LC和 输出使能信号REN。 当在存储器访问期间来自刷新定时器的刷新请求被输入到与门168时,或非门167的输出处于“L”电平,刷新请求由与门168阻止。此后, 当锁存控制信号LC变为“L”电平时,F / F 163,164和165被复位,或非门167的输出变成“H”电平,刷新请求被输入到 输出刷新脉冲发生器电路170和刷新使能信号RERF。

    Boot structure fitting for mechanical joint
    69.
    发明申请
    Boot structure fitting for mechanical joint 有权
    机械接头引导结构接头

    公开(公告)号:US20050026706A1

    公开(公告)日:2005-02-03

    申请号:US10886543

    申请日:2004-07-09

    IPC分类号: F16J15/52 F16D3/84 F16J3/04

    摘要: A boot structure fitting into an axial component to protect from wrong environment including outside dust. Said boot has a pair of annular grooves and an annular lip between said pair of annular grooves on inner surface of said boot. Said annular lip is formed so that the annular lip top is not projected from inner surface to centerline of the boot. An annular protuberance means between said boot and clamping means, through which clamping force from said clamping means is exerted in concentration to said annular lip so that said annular lip is elastically deformed and pushed to outside of said axial component. Therefore, the axial component enables to be inserted into the boot without interference between the annular lip and the axial component. Furthermore, the annular lip becomes to be free from damage by interference between the annular lip and the axial component.

    摘要翻译: 安装在轴向部件中的靴子结构,以防止包括外部灰尘在内的错误环境。 所述靴子具有一对环形槽和在所述靴子的内表面上的所述一对环形槽之间的环形唇缘。 所述环形唇形成为使得环形唇顶不从靴的内表面到中心线突出。 一种位于所述护罩和夹紧装置之间的环形突起装置,来自所述夹持装置的夹紧力通过所述环形凸起集中施加到所述环形唇缘上,使得所述环形唇缘弹性变形并被推到所述轴向部件的外部。 因此,轴向部件能够在环形唇缘和轴向部件之间不受干扰地插入靴子中。 此外,环形唇缘变得不受环形唇缘和轴向部件之间的干涉的损害。

    Electromagnetic valve
    70.
    发明授权
    Electromagnetic valve 有权
    电磁阀

    公开(公告)号:US06527249B2

    公开(公告)日:2003-03-04

    申请号:US09864209

    申请日:2001-05-25

    IPC分类号: F16K3102

    CPC分类号: F16K31/0613 Y10T137/8671

    摘要: An electromagnetic valve comprises a case having a cylindrical portion, a yoke having a large diameter portion and a small diameter portion, and a sleeve having at least two ports and receiving a valve member therein so as to perform reciprocating motion. The large diameter portion of the yoke is fluid-tightly pressed into the inner circumferential surface of the cylindrical portion of the case, and the inner circumferential surface of the sleeve is fluid-tightly pressed onto the outer circumferential surface of the small diameter portion of the yoke.

    摘要翻译: 电磁阀包括具有圆柱形部分的壳体,具有大直径部分和小直径部分的轭,以及具有至少两个端口并且在其中容纳阀构件以便执行往复运动的套筒。 轭的大直径部分被流体地压入壳体的圆筒部的内周面,并且套筒的内周面被流体地压紧到位于壳体的小直径部的外周面上 轭。