公开(公告)号：US06909116B2

公开(公告)日：2005-06-21

申请号：US10305981

申请日：2002-11-29

申请人： Minoru Watanabe ,  Noriyuki Kaifu ,  Chiori Mochizuki

发明人： Minoru Watanabe ,  Noriyuki Kaifu ,  Chiori Mochizuki

IPC分类号： G09F9/30 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L27/02 ,  H01L27/04 ,  H01L27/12 ,  H01L27/13 ,  H01L27/146 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/136204 ,  H01L27/0288 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/14609

摘要： In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.

摘要翻译： 在具有形成在基板上的多个薄膜晶体管和矩阵布线的半导体器件中，矩阵布线通过电阻器电连接，以防止在面板制造过程中的静电破坏并提高制造产量。

公开(公告)号：US20050051779A1

公开(公告)日：2005-03-10

申请号：US10969875

申请日：2004-10-22

申请人： Minoru Watanabe ,  Noriyuki Kaifu ,  Chiori Mochizuki

发明人： Minoru Watanabe ,  Noriyuki Kaifu ,  Chiori Mochizuki

IPC分类号： G09F9/30 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L27/02 ,  H01L27/04 ,  H01L27/12 ,  H01L27/13 ,  H01L27/146 ,  H01L29/786 ,  H01L29/04

CPC分类号： G02F1/136204 ,  H01L27/0288 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/14609

摘要： In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.

公开(公告)号：US06794682B2

公开(公告)日：2004-09-21

申请号：US10108484

申请日：2002-03-29

申请人： Minoru Watanabe ,  Chiori Mochizuki

发明人： Minoru Watanabe ,  Chiori Mochizuki

IPC分类号： H01L2904

CPC分类号： H01L29/66765 ,  H01L27/14679 ,  H01L29/78618 ,  H01L31/1105 ,  H01L31/18

摘要： In a semiconductor device including bottom-gate-type thin-film transistors, each of which includes a gate electrode provided on an insulating surface of a substrate, a semiconductor layer provided on the gate electrode via a gate insulating layer, a pair of doped semiconductor layers adjacent to the semiconductor layer, and source and drain electrodes consisting of a pair of conductors adjacent to corresponding ones of the pair of doped semiconductor layers, the thickness of portions of the semiconductor layer below the source and drain electrodes is smaller than the thickness of a portion of the semiconductor layer at a gap portion between the source and drain electrodes.

摘要翻译： 在包括底栅型薄膜晶体管的半导体器件中，每个半导体器件包括设置在衬底的绝缘表面上的栅电极，经由栅极绝缘层设置在栅电极上的半导体层，一对掺杂半导体 与半导体层相邻的层，以及由与一对掺杂半导体层中的对应的一对导体相邻的一对导体组成的源极和漏极，源极和漏极之下的半导体层的部分的厚度小于 在源电极和漏电极之间的间隙部分处的半导体层的一部分。

公开(公告)号：US5965872A

公开(公告)日：1999-10-12

申请号：US107283

申请日：1998-06-30

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US5811790A

公开(公告)日：1998-09-22

申请号：US803106

申请日：1997-02-20

申请人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

发明人： Tadao Endo ,  Akira Funakoshi ,  Akira Tago ,  Shinichi Takeda ,  Eiichi Takami ,  Masakazu Morishita ,  Shinichi Hayashi ,  Chiori Mochizuki ,  Toshikazu Tamura ,  Minoru Watanabe

IPC分类号： G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC分类号： H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32

摘要： In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

摘要翻译： 在包括外围IC的光电转换装置中，外围IC通过导热部件与具有光电转换元件的基板和底板热接触，该基板覆盖外围IC并具有高导热性，以消除不利影响 的外部IC产生的热量，例如低S / N比。

公开(公告)号：US08067743B2

公开(公告)日：2011-11-29

申请号：US12095674

申请日：2007-01-11

申请人： Takamasa Ishii ,  Chiori Mochizuki ,  Minoru Watanabe

发明人： Takamasa Ishii ,  Chiori Mochizuki ,  Minoru Watanabe

IPC分类号： G01T1/24

CPC分类号： G01T1/2018 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14663

摘要： Pixels including a photoelectric conversion element 1, a signal transfer TFT (thin film transistor) 2 electrically connected to the photoelectric conversion element, and a reset TFT 3 electrically connected to the photoelectric conversion element and for applying a bias to the photoelectric conversion element are two-dimensionally disposed on the insulating substrate, and the photoelectric conversion element 1, signal transfer TFT 2, and reset TFT 3 are electrically connected through a common contact hole 9. A source or drain electrode of the signal transfer TFT 2 and the source or drain electrode of the reset TFT 3 are formed from a common electroconductive layer.

摘要翻译： 电连接到光电转换元件的光电转换元件1，信号转移TFT（薄膜晶体管）2和与光电转换元件电连接并用于向光电转换元件施加偏压的复位TFT 3的像素是两个 并且光电转换元件1，信号传输TFT 2和复位TFT 3通过公共接触孔9电连接。信号传输TFT 2的源极或漏极和源极或漏极 复位TFT 3的电极由公共导电层形成。

公开(公告)号：US20110114846A1

公开(公告)日：2011-05-19

申请号：US13010226

申请日：2011-01-20

申请人： Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii ,  Masakazu Morishita

发明人： Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii ,  Masakazu Morishita

IPC分类号： G01T1/24 ,  H01L31/112

CPC分类号： G01T1/241 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14659 ,  H01L27/14663

摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.

摘要翻译： 辐射成像装置包括在绝缘基板100上的像素区域，该像素区域包括排列成矩阵的多个像素，每个像素具有将辐射转换成电荷的转换元件101和连接到转换元件101的开关元件102。 转换元件101具有上电极层119，下电极层115，布置在上电极层119和下电极层115之间的半导体层117.上电极层119或下电极层115具有开口200 至少在布置有半导体层117的区域内。

公开(公告)号：US07897930B2

公开(公告)日：2011-03-01

申请号：US12299046

申请日：2007-06-04

申请人： Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii ,  Masakazu Morishita

发明人： Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii ,  Masakazu Morishita

IPC分类号： G01T1/24

CPC分类号： G01T1/241 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14659 ,  H01L27/14663

摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.

摘要翻译： 辐射成像装置包括在绝缘基板100上的像素区域，该像素区域包括排列成矩阵的多个像素，每个像素具有将辐射转换成电荷的转换元件101和连接到转换元件101的开关元件102。 转换元件101具有上电极层119，下电极层115，布置在上电极层119和下电极层115之间的半导体层117.上电极层119或下电极层115具有开口200 至少在布置有半导体层117的区域内。

公开(公告)号：US07888680B2

公开(公告)日：2011-02-15

申请号：US12136984

申请日：2008-06-11

申请人： Minoru Watanabe ,  Noriyuki Kaifu ,  Chiori Mochizuki

发明人： Minoru Watanabe ,  Noriyuki Kaifu ,  Chiori Mochizuki

IPC分类号： H01L27/14

CPC分类号： G02F1/136204 ,  H01L27/0288 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/14609

摘要： In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield.

摘要翻译： 在具有形成在基板上的多个薄膜晶体管和矩阵布线的半导体器件中，矩阵布线通过电阻器电连接，以防止在面板制造过程中的静电破坏并提高制造产量。

公开(公告)号：US07812317B2

公开(公告)日：2010-10-12

申请号：US12205280

申请日：2008-09-05

申请人： Minoru Watanabe ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

发明人： Minoru Watanabe ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

IPC分类号： G01T1/20 ,  G01T1/24 ,  H01L21/00

CPC分类号： H01L27/14692 ,  H01L27/14609 ,  H01L27/14659 ,  H01L27/14663

摘要： A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

摘要翻译： 根据本发明的放射线检测装置包括：包括布置在绝缘基板上的开关元件和布置在开关元件上的转换元件以将辐射转换成电载体的像素，开关元件和转换元件彼此连接， 以矩阵二维排列在绝缘基板上的像素; 通常与在绝缘基板上排列成行方向的多个开关元件连接的栅极布线; 通常与沿列方向布置的多个开关元件连接的信号线; 以及布置在所述开关元件和所述转换元件之间的多个绝缘膜，其中所述栅极布线和所述信号布线中的至少一个布置成放置在所述多个绝缘膜之间。