公开(公告)号：US08407730B2

公开(公告)日：2013-03-26

申请号：US12632891

申请日：2009-12-08

申请人： Yoshihiro Sato ,  Hidenao Saito ,  Seiichi Kato ,  Jun Hato ,  Ryuichiro Mizuno ,  Katsuhiko Kimura

发明人： Yoshihiro Sato ,  Hidenao Saito ,  Seiichi Kato ,  Jun Hato ,  Ryuichiro Mizuno ,  Katsuhiko Kimura

IPC分类号： G11B7/00

CPC分类号： G11B7/0932 ,  G11B7/0933 ,  G11B7/22

摘要： An objective lens actuator 25, for driving an objective lens 1 for focusing lights upon a recoding surface of an optical disc, comprises a moving part 2, which comprises the objective lens 1 and a coil; a magnet, which is fixed on a yoke and drives the moving part 2; a plural number of elastic support parts, each of which supports the moving part 2 at an end thereof; a first fixing portion 5a and a second fixing portion 5b, which fix other ends of the plural number of elastic support parts 4 and are disposed opposite to each other in a focus direction; and a moving mechanism 6, which is provided on the first and second fixing portion 5a and 5b, so that the first and second fixing portions 5a and 5b can move in the focus direction, relatively, and thereby providing the objective lens actuator 25 enabling to reduce the dynamic relative tilt between the optical disc and the objective lens 1 (i.e., reducing the tilt of the objective lens 1 in the tangential direction when operating), as well as, an optical pickup and an optical disc drive.

摘要翻译： 用于驱动用于将光聚焦在光盘的记录表面上的物镜1的物镜致动器25包括包括物镜1和线圈的移动部分2; 磁体，其固定在磁轭上并驱动移动部件2; 多个弹性支撑部件，每个弹性支撑部件在其一端支撑移动部件2; 第一固定部分5a和第二固定部分5b，其固定多个弹性支撑部分4的另一端，并且在聚焦方向上彼此相对设置; 以及设置在第一和第二固定部分5a和5b上的移动机构6，使得第一和第二固定部分5a和5b可相对于聚焦方向移动，从而使物镜致动器25能够 降低光盘和物镜1之间的动态相对倾斜度（即，当操作时减小物镜1在切线方向上的倾斜度）以及光拾取器和光盘驱动器。

公开(公告)号：US08283700B2

公开(公告)日：2012-10-09

申请号：US13072798

申请日：2011-03-28

申请人： Yoshihiro Sato ,  Takehiko Nomura

发明人： Yoshihiro Sato ,  Takehiko Nomura

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462

摘要： A field effect transistor includes a channel layer of group-III nitride-based compound semiconductor; an interface layer formed on the channel layer and of AlXInYGa1-X-YN, where 0≦X≦1, 0≦Y≦1, and X+Y≦1, which is different from material of the channel layer, an electron supplying layer of group-III nitride-based compound semiconductor formed on the interface layer, the electron supplying layer having a recess that reaches the interface layer; a source electrode and a drain electrode formed on the electron supplying layer on respective sides of the recess; an insulating film formed on an inner surface of the recess; and a gate electrode formed on the insulating film.

摘要翻译： 场效应晶体管包括III族氮化物基化合物半导体的沟道层; 形成在沟道层上的界面层和AlXInYGa1-X-YN，其中0＆nlE; X＆lt; ll; 1,0

公开(公告)号：US20120252209A1

公开(公告)日：2012-10-04

申请号：US13433746

申请日：2012-03-29

申请人： Yoshiro Kabe ,  Yoshihiro Sato

发明人： Yoshiro Kabe ,  Yoshihiro Sato

IPC分类号： H01L21/768 ,  C23C14/06 ,  H01L21/318

CPC分类号： H01L21/321 ,  C23C8/36 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/7685 ,  H01L29/4941 ,  H01L29/518

摘要： A plasma nitriding method includes placing, in a processing chamber, a target object having a structure including a first portion containing a metal and a second portion containing silicon to expose surfaces of the first and the second portion; and performing a plasma process on the target object to selectively nitride the surface of the first portion such that a metal nitride film is selectively formed on the surface of the first portion. Further, the first portion contains tungsten, and a nitrogen-containing plasma is generated by supplying a nitrogen-containing gas into the processing chamber and setting an internal pressure of the processing chamber in a range from 133 Pa to 1333 Pa. The surface of the first portion is selectively nitrided without nitriding the surface of the second portion by the nitrogen-containing plasma such that a tungsten nitride film is formed on the surface of the first portion.

摘要翻译： 等离子体氮化方法包括在处理室中放置具有包括含有金属的第一部分和含有硅的第二部分的结构的目标物体以暴露第一和第二部分的表面; 以及对所述目标物体进行等离子体处理以选择性地氮化所述第一部分的表面，使得在所述第一部分的表面上选择性地形成金属氮化物膜。 此外，第一部分含有钨，通过向处理室中供给含氮气体并将处理室的内部压力设定在133Pa〜1333Pa的范围内，生成含氮等离子体， 选择性氮化第一部分，而不会通过含氮等离子体氮化第二部分的表面，使得在第一部分的表面上形成氮化钨膜。

公开(公告)号：US08277971B2

公开(公告)日：2012-10-02

申请号：US12970179

申请日：2010-12-16

申请人： Takayoshi Yamasaki ,  Hiroaki Sato ,  Toshiaki Ueda ,  Tomonori Watanabe ,  Yoichi Miyajima ,  Masayuki Ishii ,  Shoichi Shintani ,  Yoshihiro Sato

发明人： Takayoshi Yamasaki ,  Hiroaki Sato ,  Toshiaki Ueda ,  Tomonori Watanabe ,  Yoichi Miyajima ,  Masayuki Ishii ,  Shoichi Shintani ,  Yoshihiro Sato

IPC分类号： H01M2/04

CPC分类号： H01M2/1061 ,  H01M2/30 ,  H01M2/342 ,  H01M10/46

摘要： In a battery including a battery cell formed in a flattened substantially parallelepiped shape and a terminal contacting section electrically connected to the battery cell, at one end in the longitudinal direction of a face of the battery opposing to the face on which the terminal contacting section is provided, a projecting portion which projects in the longitudinal direction of the face is provided. Meanwhile, another projecting portion which projects in the longitudinal direction of the face is provided at the other end. The projecting portions may have projecting lengths different from each other or may have projecting lengths and projecting thicknesses different from each other. A charging apparatus into which the battery is to be installed includes an accommodating section for the battery which in turn includes projection accommodating portions configured to individually accommodate the projecting portions.

摘要翻译： 在包括形成为扁平大致平行六面体形状的电池单元的电池和与电池单元电连接的端子接触部分中，在电池的与端子接触部分的面相对的面的纵向方向上的一端 设置有设置在面部的长度方向突出的突出部。 同时，在另一端设置有在面的纵向突出的另一突出部。 突出部分可以具有彼此不同的突出长度，或者可以具有彼此不同的突出长度和突出厚度。 要安装电池的充电装置包括一个用于电池的容纳部分，该容纳部分又包括被构造成分别容纳突出部分的突起容纳部分。

公开(公告)号：US08158535B2

公开(公告)日：2012-04-17

申请号：US12521666

申请日：2007-12-20

申请人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

发明人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

IPC分类号： H01L21/31

CPC分类号： H01L21/28202 ,  H01L21/67109 ,  H01L21/67115

摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.

摘要翻译： 一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤 的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。 在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

公开(公告)号：US20110227168A1

公开(公告)日：2011-09-22

申请号：US13149554

申请日：2011-05-31

申请人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

发明人： Tsutomu Oosuka ,  Hisashi Ogawa ,  Yoshihiro Sato

IPC分类号： H01L29/78

CPC分类号： H01L23/535 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L27/11 ,  H01L29/161 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.

摘要翻译： 半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。 栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。

公开(公告)号：US20110124175A1

公开(公告)日：2011-05-26

申请号：US13055154

申请日：2009-07-08

申请人： Takuya Sugawara ,  Yoshihiro Sato

发明人： Takuya Sugawara ,  Yoshihiro Sato

IPC分类号： H01L21/02 ,  B01J19/08

CPC分类号： H01L21/76886 ,  H01L21/76849 ,  H01L21/76862 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.

摘要翻译： 氮化钛膜的改变方法，包括将形成在半导体衬底上的氮化钛膜暴露于通过激发包含惰性气体或氮气的处理气体而获得的等离子体，并排除氧气，从而增加氮化钛膜的电阻率。

公开(公告)号：US20100307685A1

公开(公告)日：2010-12-09

申请号：US12865519

申请日：2009-01-30

申请人： Kinya Ota ,  Caizhong Tian ,  Hiroshi Kobayashi ,  Yoshihiro Sato ,  Toshihiko Shiozawa ,  Koji Maekawa

发明人： Kinya Ota ,  Caizhong Tian ,  Hiroshi Kobayashi ,  Yoshihiro Sato ,  Toshihiko Shiozawa ,  Koji Maekawa

IPC分类号： C23F1/08

CPC分类号： H05H1/46 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

摘要： In a microwave plasma processing apparatus, when a surface of a planar antenna 31 for radiating a microwave to form a plasma is concentrically divided into a central region 31a, an outer circumferential region 31c and a middle region 31b therebetween, a plurality of pairs of microwave radiating holes 32 elongated in different directions are concentrically arranged in the central region 31a and the outer circumferential region 31c and no microwave radiating hole is formed in the middle region 31b, and a microwave radiating surface of a microwave transmitting plate 28 is provided with a concave portion 28a.

摘要翻译： 在微波等离子体处理装置中，当用于放射微波以形成等离子体的平面天线31的表面同心地分成中间区域31a，外周区域31c和中间区域31b之间时，多对微波 沿中心区域31a和外周区域31c同心地布置有沿不同方向伸长的辐射孔32，在中间区域31b中不形成微波辐射孔，并且微波辐射板28的微波辐射表面设置有凹部 部分28a。

公开(公告)号：US20100244560A1

公开(公告)日：2010-09-30

申请号：US12713994

申请日：2010-02-26

申请人： Yoshihiro Sato ,  Kenichi Kessoku ,  Hirohito Miyazaki

发明人： Yoshihiro Sato ,  Kenichi Kessoku ,  Hirohito Miyazaki

IPC分类号： B60L1/00

CPC分类号： B60R16/03

摘要： A vehicle power supply system has a power supply unit for supplying power to each unit of a vehicle, a plurality of actuation units actuated by the power from the power supply unit, an operation unit arranged for each of the plurality of actuation units, and operated when actuating the corresponding actuation unit, and a control unit for performing a control of starting supply of power from the power supply unit to each of the plurality of actuation units according to the operation of the corresponding operation unit when an actuation condition of the actuation unit corresponding to the operation unit is satisfied.

摘要翻译： 车辆电源系统具有用于向车辆的每个单元供电的电源单元，由来自电源单元的电力驱动的多个致动单元，为多个致动单元中的每一个而设置的操作单元，并且被操作 当致动相应的致动单元时，以及控制单元，用于当致动单元的致动状态时根据相应的操作单元的操作进行控制，以从电源单元开始向多个致动单元中的每个致动单元 对应于操作单元满足。

公开(公告)号：US07787287B2

公开(公告)日：2010-08-31

申请号：US11723209

申请日：2007-03-19

申请人： Yoshihiro Sato

发明人： Yoshihiro Sato

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/08

摘要： In an MRAM, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.

摘要翻译： 在MRAM中，弯曲区域（206）形成在位线（202）中，该弯曲区域（206）处于弯曲形状，TMR元件（203）作为中心，在这种情况下为粗糙 U形（在所示示例中，大致倒U形）。 其中形成弯曲区域（206）的位线（202）包括在由弯曲区域（206）形成的空间中的TMR元件（203）。 由于这种相对简单的结构，这种结构实现了高度可靠的MRAM，其确保了在将数据写入存储器单元期间基本上节省功率，同时满足对器件进一步小型化的要求。