公开(公告)号：US07100266B2

公开(公告)日：2006-09-05

申请号：US10039201

申请日：2002-01-04

申请人： Martin L. Plumer ,  Nurul Amin ,  Vee S. Kong ,  Richard P. Michel ,  Johannes van Ek

发明人： Martin L. Plumer ,  Nurul Amin ,  Vee S. Kong ,  Richard P. Michel ,  Johannes van Ek

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1871 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A beveled writing pole includes a top portion, a beveled portion, and a throat portion. The top portion has an end that defines a writing pole tip. The beveled portion adjoins the top portion and has a bevel that extends from the writing pole tip and increases a thickness of the writing pole proximate the pole tip. The throat portion is formed of the top and beveled portions and has tapered sides that extend from the writing pole tip and increase a width of the writing pole proximate the writing pole tip. A method of forming the beveled writing pole is also presented.

摘要翻译： 斜面书写柱包括顶部，斜面部分和喉部。 顶部具有限定书写杆尖端的端部。 斜面部分与顶部相邻并且具有从书杆极端部延伸的斜面，并增加靠近极尖的书写杆的厚度。 喉部由顶部和斜面部分形成，并且具有从书写极端部延伸的锥形侧面，并增加书杆极靠近书杆极尖的宽度。 还提出了形成斜面书写柱的方法。

公开(公告)号：US06898053B1

公开(公告)日：2005-05-24

申请号：US09695679

申请日：2000-10-24

申请人： Sakhrat Khizroev ,  Dmitri Litvinov ,  Bill Crue ,  Nurul Amin ,  Robert Earl Rottmayer

发明人： Sakhrat Khizroev ,  Dmitri Litvinov ,  Bill Crue ,  Nurul Amin ,  Robert Earl Rottmayer

IPC分类号： G11B5/00 ,  G11B5/127 ,  G11B5/147

CPC分类号： G11B5/1278 ,  G11B2005/0029

摘要： A perpendicular recording head for use with magnetic recording media includes an unusually thin main pole. The main pole is made by depositing magnetically permeable material on a nonmagnetic substrate. The main pole is then magnetically coupled with an opposing pole so that the deposited magnetically permeable material is oriented parallel to the recording head's direction of travel.

摘要翻译： 用于磁记录介质的垂直记录头包括非常薄的主极。 主极通过在非磁性基底上沉积导磁材料制成。 然后将主极与相对的磁极磁耦合，使得沉积的导磁材料平行于记录头的行进方向取向。

公开(公告)号：US20050105219A1

公开(公告)日：2005-05-19

申请号：US10715695

申请日：2003-11-18

申请人： Sining Mao ,  Eric Linville ,  Nurul Amin ,  Johannes Van Ek ,  Olle Heinonen

发明人： Sining Mao ,  Eric Linville ,  Nurul Amin ,  Johannes Van Ek ,  Olle Heinonen

IPC分类号： G11B5/00 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3948 ,  G11B2005/0008 ,  G11B2005/0029 ,  G11B2005/3996

摘要： A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first free layer, a second free layer, and a nonmagnetic layer positioned therebetween. A nonmagnetic spacer means is positioned between the plurality of tri-layer readers for electrically connecting the plurality of tri-layer readers in series such that a single CPP sense current representing a differential signal flows serially through the read head. With a single tri-layer reader, the free layers are spaced by a width substantially similar to the transition width of the magnetic medium.

摘要翻译： 差分读取头包括在垂直于平面（CPP）模式的电流中操作的一个三层读取器或多个三层读取器。 三层读取器各自包括位于其间的第一自由层，第二自由层和非磁性层。 非磁性间隔装置位于多个三层读取器之间，用于串联电连接多个三层读取器，使得表示差分信号的单个CPP感测电流串行流过读取头。 使用单个三层读取器，自由层间隔开与磁介质的过渡宽度基本相似的宽度。

公开(公告)号：US06510030B1

公开(公告)日：2003-01-21

申请号：US09528286

申请日：2000-03-17

申请人： Dian Song ,  Nurul Amin

发明人： Dian Song ,  Nurul Amin

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/11 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  Y10T29/49021

摘要： A method for forming a transducing head first requires the deposition of a bottom shield, a bottom thick gap, a bottom thin gap, a sensor, a first flux guide, a top thin gap, a top thick gap, and a top shield. After each of the layers is deposited, an air bearing portion of both the top and bottom thick gaps is removed, such that a length of the air bearing portion of the top thick gap is substantially equal to a length of the air bearing portion of the bottom thick gap. Next, an air bearing shield is deposited over the air bearing surface, the air bearing shield being in contact with the top and bottom shields, the top and bottom thick gaps, the top and bottom thin gaps, and the flux guide. Finally, the air bearing surface of the transducing head is planarized, resulting in the top and bottom thin gaps and the first flux guide each being exposed at the air bearing surface.

摘要翻译： 用于形成换能头的方法首先需要沉积底部屏蔽层，底部厚间隙，底部薄间隙，传感器，第一磁通引导件，顶部薄间隙，顶部厚间隙和顶部屏蔽。 在沉积每个层之后，去除顶部和底部厚间隙的空气轴承部分，使得顶部厚间隙的空气轴承部分的长度基本上等于 底部厚差。 接下来，空气轴承屏蔽层沉积在空气轴承表面上，空气轴承屏蔽与顶部和底部屏蔽件，顶部和底部较厚间隙，顶部和底部薄间隙以及磁通引导件接触。 最后，换能头的空气轴承表面被平坦化，导致顶部和底部薄的间隙以及第一个磁通引导件都被暴露在空气轴承表面。

公开(公告)号：US06462919B1

公开(公告)日：2002-10-08

申请号：US09442798

申请日：1999-11-18

申请人： Anthony M. Mack ,  Sining Mao ,  Michael A. Seigler ,  Nurul Amin ,  Taras G. Pokhil ,  Ananth Naman ,  Jin Li ,  Zheng Gao ,  Edward S. Murdock ,  Jumna P. Ramdular ,  Timothy Radke

发明人： Anthony M. Mack ,  Sining Mao ,  Michael A. Seigler ,  Nurul Amin ,  Taras G. Pokhil ,  Ananth Naman ,  Jin Li ,  Zheng Gao ,  Edward S. Murdock ,  Jumna P. Ramdular ,  Timothy Radke

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932

摘要： A spin valve sensor is disclosed that comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material. A first layer of non-ferromagnetic material is positioned between the first and second layers of ferromagnetic material. A pinning layer is positioned adjacent to the first layer of ferromagnetic material such that the pinning layer is in contact with the first layer of ferromagnetic material. The spin valve includes synthetic antiferromagnetic bias means extending over passive end regions of the second layer of ferromagnetic material for producing a longitudinal bias in the passive end regions of a level sufficient to maintain the passive end regions in a single domain state. A method for forming a spin valve sensor with exchange tabs is also disclosed.

摘要翻译： 公开了一种自旋阀传感器，其包括第一层铁磁材料层和第二层铁磁材料层。 第一层非铁磁材料位于第一和第二层铁磁材料之间。 钉扎层定位成与第一铁磁材料层相邻，使得钉扎层与第一层铁磁材料接触。 自旋阀包括在第二铁磁材料层的无源端区域上延伸的合成反铁磁偏压装置，用于在被动端区域产生足以将被动端区域维持在单一畴状态的水平面上的纵向偏压。 还公开了一种用于形成具有交换接头的自旋阀传感器的方法。

公开(公告)号：US5406434A

公开(公告)日：1995-04-11

申请号：US263009

申请日：1994-06-20

申请人： Nurul Amin ,  John Bortins ,  Ying D. Yan ,  Beat G. Keel ,  Nathan Curland ,  Tim Madsen

发明人： Nurul Amin ,  John Bortins ,  Ying D. Yan ,  Beat G. Keel ,  Nathan Curland ,  Tim Madsen

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/187

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49044

摘要： A thin film magnetic read/write head is manufactured using Al.sub.2 O.sub.3 dams. The Al.sub.2 O.sub.3 dams are formed using a sacrificial layer which is deposited upon a bottom pole layer. An Al.sub.2 O.sub.3 layer is deposited over the sacrificial layer. When the sacrificial layer is removed, the Al.sub.2 O.sub.3 layer forms dams between which a top pole piece is deposited. The sacrificial layer is removed using lapping and a selected chemical etch; etch of the sacrificial layer which lifts-off overlying partial lapping or chemical etch followed by chemical Al.sub.2 O.sub.3 ; depositing photoresist dams and chemically, etching the encapsulation layer and the sacrificial layer; or removal through physical or thermal shock of the Al.sub.2 O.sub.3 layer sputtered at zero bias followed by a selective chemical etch of the sacrificial layer. The thin film magnetic head of the present invention has pole tips which provide an outside pole face contour that is significantly different from a pole tip contour along a gap region. This reduces an undershoot effect in readback pulses in a readback signal. The altered contour can be used on both top and bottom pole tips to eliminate both leading and trailing undershoots. Additionally, in shielded probe heads for vertical recording a gap region contour can be altered to achieve a similar reduction in leading undershoot.

摘要翻译： 使用Al2O3坝制造薄膜磁读/写头。 使用沉积在底极层上的牺牲层来形成Al 2 O 3坝。 在牺牲层上沉积Al 2 O 3层。 当牺牲层被去除时，Al 2 O 3层形成在其上沉积顶极片之间的堤坝。 使用研磨和选择的化学蚀刻去除牺牲层; 牺牲层的蚀刻，其覆盖部分研磨或化学蚀刻，然后是化学Al 2 O 3; 沉积光致抗蚀剂坝并进行化学蚀刻，蚀刻封装层和牺牲层; 或通过在零偏压下溅射的Al 2 O 3层的物理或热冲击进行去除，随后对牺牲层进行选择性化学蚀刻。 本发明的薄膜磁头具有极尖，其提供与极尖轮廓沿间隙区域显着不同的外极面轮廓。 这可以减少回读信号中的回读脉冲中的下冲作用。 改变的轮廓可以在顶部和底部极尖上使用，以消除前方和后方的下冲。 另外，在用于垂直记录的屏蔽探头中，可以改变间隙区域轮廓以实现引导下冲的类似的减小。

公开(公告)号：US08343801B2

公开(公告)日：2013-01-01

申请号：US13278240

申请日：2011-10-21

申请人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

发明人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146

摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

公开(公告)号：US20120224418A1

公开(公告)日：2012-09-06

申请号：US13473448

申请日：2012-05-16

申请人： Nurul Amin ,  Johannes Van Ek

发明人： Nurul Amin ,  Johannes Van Ek

IPC分类号： G11C11/15

CPC分类号： G11C11/5607 ,  G11B5/02 ,  G11B5/66 ,  G11B5/746 ,  G11C11/161 ,  G11C11/1675

摘要： An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

摘要翻译： 一种用于能够用磁性层选择的多位存储器的装置和相关方法。 本发明的各种实施方案通常涉及具有低矫顽力的第一选择层，其设置在第一和第二存储层之间，每个具有高矫顽力。 响应于第一选择层的磁饱和，允许将逻辑状态编程到第二存储层。

公开(公告)号：US20120199936A1

公开(公告)日：2012-08-09

申请号：US13445351

申请日：2012-04-12

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L29/868

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

公开(公告)号：US08198181B1

公开(公告)日：2012-06-12

申请号：US13400364

申请日：2012-02-20

申请人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

发明人： Young Pil Kim ,  Nurul Amin ,  Dadi Setiadi ,  Venugopalan Vaithyanathan ,  Wei Tian ,  Insik Jin

IPC分类号： H01L21/425

CPC分类号： H01L27/0814 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/0002 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/224 ,  H01L27/2409 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147

摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.