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公开(公告)号：US09397280B2
公开(公告)日：2016-07-19
申请号：US14383177
申请日：2013-02-14
CPC分类号： H01L33/641 , C23C24/04 , C25D7/12 , H01L33/0079 , H01L33/46 , H01L33/644 , H01L2924/0002 , H01L2933/0025 , H01L2933/005 , H01L2933/0075 , H01L2924/00
摘要： A method of producing an optoelectronic semiconductor chip includes growing an optoelectronic semiconductor layer sequence on a growth substrate, forming an electrically insulating layer on a side of the optoelectronic semiconductor layer sequence facing away from the growth substrate by depositing particles of an electrically insulating material by an aerosol deposition method, and at least partly removing the growth substrate after forming the electrically insulating layer.
摘要翻译： 制造光电子半导体芯片的方法包括在生长衬底上生长光电子半导体层序列，通过将电绝缘材料的颗粒沉积在光电子半导体层序列的一侧上而形成电光绝缘层 气溶胶沉积法，并且在形成电绝缘层之后至少部分去除生长衬底。
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公开(公告)号：US09202971B2
公开(公告)日：2015-12-01
申请号：US14535044
申请日：2014-11-06
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50≦∫(35−k(z))dz−2.5N−1.5∫dz≦120.
摘要翻译： 一种基于氮化物材料系统的光电子半导体芯片，包括至少一个有源量子阱，其中在操作期间在有源量子阱中产生电磁辐射，有源量子阱在平行于生长方向z的方向上包括N个连续的区域 的半导体芯片的N是大于或等于2的自然数，这些区域在与生长方向z平行的方向上连续编号，至少两个区域具有彼此不同的平均铝含量k， 有效量子阱满足条件：50＆nlE;∫（35-k（z））dz-2.5N-1.5∫dz＆nlE; 120。
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公开(公告)号：US20150252962A1
公开(公告)日：2015-09-10
申请号：US14423026
申请日：2013-08-20
CPC分类号： F21V9/30 , F21K9/64 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/504 , H01L2924/0002 , H05B33/14 , H01L2924/00
摘要： The invention relates to an An arrangement (1) for generating white light (5), having at least two light-emitting diodes, wherein the first diode (2) is designed to generate blue light, wherein a conversion element (4) is associated with the first diode, wherein the conversion element is designed to convert a part of the blue light from the first diode into green light, and wherein the conversion element is designed to convert a part of the blue light from the first diode into red light, wherein the second diode (3) is provided to emit red light.
摘要翻译： 本发明涉及一种用于产生具有至少两个发光二极管的白光（5）的安排（1），其中第一二极管（2）被设计成产生蓝光，其中转换元件（4）相关联 与所述第一二极管，其中所述转换元件被设计成将来自所述第一二极管的蓝光的一部分转换成绿光，并且其中所述转换元件被设计为将来自所述第一二极管的蓝光的一部分转换成红光， 其中所述第二二极管（3）被提供以发射红光。
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公开(公告)号：US08653540B2
公开(公告)日：2014-02-18
申请号：US13862096
申请日：2013-04-12
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Matthias Sabathil
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.
摘要翻译： 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。
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